Philips BY329X-1700S Datasheet
Philips Semiconductors Product specification
Damper diode BY329X-1700S
fast, high-voltage
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 1700 V
• Fast switching
• Soft recovery characteristic VF ≤ 1.5 V
• High thermal cycling performance
• Isolated mounting tab I
F(PEAK)
= 6 A
I
FSM
≤ 60 A
trr ≤ 170 ns
GENERAL DESCRIPTION PINNING SOD113
Glass-passivated double diffused PIN DESCRIPTION
rectifierdiode featuring low forward
voltage drop, fast reverse recovery 1 cathode
and soft recovery characteristic.
Thedeviceisintendedforuse in TV 2 anode
receivers and PC monitors.
tab isolated
The BY329X series is supplied in
the conventional leaded SOD113
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RSM
Peak non repetitive reverse - 1700 V
voltage
V
RRM
Peak repetitive reverse voltage - 1700 V
V
RWM
Crest working reverse voltage - 1300 V
I
F(peak)
Peak working forward current f = 16 kHz - 6 A
f = 64 kHz - 6 A
I
FRM
Peak repetitive forward current t = 25 µs; δ = 0.5; Ths ≤ 91 ˚C - 14 A
I
F(RMS)
RMS forward current - 10 A
I
FSM
Peak non-repetitive forward t = 10 ms - 60 A
current sinusoidal; Tj = 150 ˚C prior to
surge; with reapplied V
RWM(max)
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction temperature - 150 ˚C
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal - 2500 V
both terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
C
isol
Capacitance from both terminals f = 1 MHz - 10 - pF
to external heatsink
k a
12
12
case
September 1998 1 Rev 1.200
Philips Semiconductors Product specification
Damper diode BY329X-1700S
fast, high-voltage
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction to with heatsink compound - - 4.8 K/W
heatsink without heatsink compound - - 5.9 K/W
R
th j-a
Thermal resistance junction to in free air. - 55 - K/W
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage IF = 6.5 A - 1.35 1.65 V
IF = 6.5 A; Tj = 125 ˚C - 1.2 1.5 V
I
R
Reverse current VR = V
RWMmax
- - 250 µA
VR = V
RWMmax
; Tj = 125 ˚C - - 1.0 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
fr
Forward recovery voltage IF = 6.5 ; dIF/dt = 50 A/µs - 30 40 V
t
fr
Forward recovery time IF = 6.5 A; dIF/dt = 50 A/µs; VF = 5 V - 300 320 ns
t
rr
Reverse recovery time IF = 1 A; -dIF/dt = 50 A/µs; VR ≥ 30 V - 130 170 ns
Q
s
Reverse recovery charge IF = 2 A; -dIF/dt = 20 A/µs; VR ≥ 30 V - 0.7 1.0 µC
Fig.1. Definition of Vfr and tfr Fig.2. Definition of trr and Q
s
time
time
V
F
V
fr
V
F
I
F
10%
5V
tfr
100%
time
dI
dt
F
I
R
I
F
trr
25%
Qs
September 1998 2 Rev 1.200
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