Philips BY329X-1500S, BY329X-1500 Datasheet
Philips Semiconductors Product specification
Damper diode BY329X-1500, BY329X-1500S
fast, high-voltage
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 1500 V
• Fast switching
• Soft recovery characteristic VF ≤ 1.35 V / 1.5 V
• High thermal cycling performance
• Isolated mounting tab I
GENERAL DESCRIPTION PINNING SOD113
k a
12
= 6 A (f = 16 kHz)
F(peak)
I
= 6 A (f = 70 kHz)
F(peak)
trr ≤ 230 ns / 160 ns
I
FSM
≤ 75 A
Glass-passivated double diffused PIN DESCRIPTION
rectifierdiode featuring low forward
case
voltage drop, fast reverse recovery 1 anode
and soft recovery characteristic.
Thedeviceisintendedforuse in TV 2 cathode
receivers and PC monitors.
tab isolated
The BY329X series is supplied in
the conventional leaded SOD113
package.
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RSM
V
RRM
V
RWM
I
F(peak)
I
FRM
I
F(RMS)
I
FSM
T
stg
T
j
Peak non-repetitive reverse - 1500 V
voltage
Peak repetitive reverse - 1500 V
voltage
Crest working reverse voltage - 1300 V
BY329X -1500 -1500S
Peak working forward current f = 16 kHz - 6 - A
f = 70 kHz - - 6 A
Peak repetitive forward t = 25 µs; δ = 0.5; Ths ≤ 86 ˚C - 14 A
current
RMS forward current - 11 A
Peak non-repetitive forward t = 10 ms - 75 A
current sinusoidal; Tj = 150 ˚C prior to
surge; with reapplied V
Storage temperature -40 150 ˚C
RWM(max)
Operating junction - 150 ˚C
temperature
September 1998 1 Rev 1.100
Philips Semiconductors Product specification
Damper diode BY329X-1500, BY329X-1500S
fast, high-voltage
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
I
R
R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal - 2500 V
both terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from both terminals f = 1 MHz - 10 - pF
to external heatsink
Thermal resistance junction to with heatsink compound - - 4.8 K/W
heatsink without heatsink compound - - 5.9 K/W
Thermal resistance junction to in free air. - 55 - K/W
ambient
BY329X- 1500 1500S 1500 1500S
Forward voltage IF = 6.5 A 1.1 1.3 1.45 1.6 V
IF = 6.5 A; Tj = 125 ˚C 1.05 1.2 1.35 1.5 V
Reverse current VR = 1300 V - 250 - 250 µA
VR = 1300 V; Tj = 125 ˚C - 1 - 1 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
BY329X 1500 1500S 1500 1500S
t
rr
Q
s
V
fr
t
fr
Reverse recovery time IF = 1 A; VR ≥ 30 V; 0.18 0.13 0.23 0.16 µs
dIF/dt = 50A/µs
Reverse recovery charge IF = 2 A; -dIF/dt = 20 A/µs 1.6 0.7 2.0 0.95 µC
Peak forward recovery voltage IF = 6.5A; dIF/dt = 50A/µs 17233040V
Forward recovery time IF = 6.5A; dIF/dt = 50A/µs 210 220 300 320 ns
September 1998 2 Rev 1.100
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