Philips by329f DATASHEETS
Philips Semiconductors Product specification
Rectifier diodes BY329F, BY329X series
fast, soft-recovery
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
= 800 V/ 1000 V/ 1200 V
R
• Fast switching
• Soft recovery characteristic I
• High thermal cycling performance
• Isolated mounting tab I
k a
12
F(AV)
FSM
= 8 A
≤ 65 A
trr ≤ 145 ns
GENERAL DESCRIPTION
Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft
recoverycharacteristic. The devices areintended for usein TV receivers,monitors and switchedmodepower supplies.
The BY329F series is supplied in the conventional leaded SOD100 package.
The BY329X series is supplied in the conventional leaded SOD113 package.
PINNING SOD100 SOD113
PIN DESCRIPTION
1 cathode
2 anode
tab isolated
case
12
case
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BY329F / BY329X -800 -1000 -1200
V
RSM
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FRM
I
FSM
I2tI
T
stg
T
j
1. Neglecting switching and reverse current losses.
Peak non-repetitive reverse - 800 1000 1200 V
voltage
Peak repetitive reverse voltage - 800 1000 1200 V
Crest working reverse voltage - 600 800 1000 V
Average forward current
1
square wave; δ = 0.5; - 8 A
Ths ≤ 83 ˚C
sinusoidal; a = 1.57; - 7 A
Ths ≤ 90 ˚C
RMS forward current - 11 A
Peak repetitive forward current t = 25 µs; δ = 0.5; - 16 A
Ths ≤ 83 ˚C
Peak non-repetitive forward t = 10 ms - 65 A
current. t = 8.3 ms - 71 A
sinusoidal; Tj = 150 ˚C prior
to surge; with reapplied
V
2
t for fusing t = 10 ms - 28 A2s
RWM(max)
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
September 1998 1 Rev 1.100
Philips Semiconductors Product specification
Rectifier diodes BY329F, BY329X series
fast, soft-recovery
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
Peak isolation voltage from SOD100 package; R.H. ≤ 65%; clean and - - 1500 V
both terminals to external dustfree
heatsink
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; - - 2500 V
both terminals to external sinusoidal waveform; R.H. ≤ 65%; clean
heatsink and dustfree
Capacitance from pin 1 to f = 1 MHz - 10 - pF
external heatsink
Thermal resistance junction to with heatsink compound - - 4.8 K/W
heatsink without heatsink compound - - 5.9 K/W
Thermal resistance junction to in free air. - 55 - K/W
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Forward voltage IF = 20 A - 1.5 1.85 V
Reverse current VR = V
; Tj = 125 ˚C - 0.1 1.0 mA
RWM
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
t
rr
Q
s
dIR/dt Maximum slope of the reverse IF = 2 A; -dIF/dt = 20 A/µs - 50 60 A/µs
Reverse recovery time IF = 1 A; VR > 30 V; -dIF/dt = 50 A/µs - 125 145 ns
Reverse recovery charge IF = 2 A; VR > 30 V; -dIF/dt = 20 A/µs - 0.5 0.7 µC
recovery current
September 1998 2 Rev 1.100
Philips Semiconductors Product specification
Rectifier diodes BY329F, BY329X series
fast, soft-recovery
I
F
dI
F
dt
trr
time
Qs
I
R
I
rrm
Fig.1. Definition of trr, Qs and I
PF / W
20
Vo = 1.25 V
Rs = 0.03 Ohms
15
10
5
0
0 2 4 6 8 10 12
0.1
BY329
0.5
0.2
I
IF(AV) / A
25%
Ths(max) / C
t
p
T
rrm
D = 1.0
D =
Fig.2. Maximum forward dissipation, PF = f(I
square wave current waveform; parameter D = duty
cycle = tp/T
.
100%
54
78
102
t
p
T
126
t
150
);
F(AV)
IFS (RMS) / A
100
90
80
70
60
50
40
30
20
10
0
1ms 10ms 0.1s 1s 10s
IFSM
tp / s
BY329
Fig.4. Maximum non-repetitive rms forward current.
IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior
to surge with reapplied V
IF / A
30
Tj = 150 C
Tj = 25 C
20
10
typ
0
0 1
0.5
VF / V
1.5
RWM
max
.
BY229F
2
Fig.5. Typical and maximum forward characteristic;
IF = f(VF); parameter T
j
BY329
IF = 10 A
10 A
1 A
2 A
1 A
2.2
Ths(max) / C
a = 1.57
1.9
.
78
102
126
150
F(AV)
PF / W
15
Vo = 1.25 V
Rs = 0.03 Ohms
10
5
0
0 2 4 6 8
BY329
2.8
4
IF(AV) / A
Fig.3. Maximum forward dissipation, PF = f(I
sinusoidal current waveform; parameter a = form
factor = I
F(RMS)/IF(AV)
Qs / uC
10
Tj = 150 C
Tj = 25 C
2 A
1
0.1
1 100
);
Fig.6. Maximum Qs at Tj = 25˚C and 150˚C
10
-dIF/dt (A/us)
September 1998 3 Rev 1.100
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