Philips Semiconductors Product specification
Damper diode BY329-1500, BY329-1500S
fast, high-voltage
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 1500 V
• Fast switching
• Soft recovery characteristic VF ≤ 1.35 V / 1.5 V
• High thermal cycling performance
• Low thermal resistance I
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
k a
12
= 6 A (f = 16 kHz)
F(peak)
I
= 6 A (f = 70 kHz)
F(peak)
trr ≤ 230 ns / 160 ns
I
FSM
≤ 75 A
Glass-passivated double diffused PIN DESCRIPTION
rectifierdiode featuring low forward
tab
voltage drop, fast reverse recovery 1 cathode
and soft recovery characteristic.
Thedeviceisintendedforuse in TV 2 anode
receivers and PC monitors.
tab cathode
The BY329 series is supplied in the
conventional leaded SOD59
1
(TO220AC) package.
2
LIMITING VALUES
Limiting values accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RSM
V
RRM
V
RWM
I
F(peak)
I
FRM
I
F(RMS)
I
FSM
T
stg
T
j
Peak non-repetitive peak - 1500 V
reverse voltage
Peak repetitive reverse - 1500 V
voltage
Crest working reverse voltage - 1300 V
BY329 -1500 -1500S
Peak working forward current f = 16 kHz - 6 - A
f = 70 kHz - - 6 A
Peak repetitive forward t = 25 µs; δ = 0.5; - 14 A
current Tmb ≤ 123 ˚C
RMS forward current - 11 A
Peak non-repetitive forward t = 10 ms - 75 A
current sinusoidal; Tj = 150 ˚C prior to
surge; with reapplied V
Storage temperature -40 150 ˚C
RWM(max)
Operating junction - 150 ˚C
temperature
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
September 1998 1 Rev 1.100
Thermal resistance junction to - - 2.0 K/W
mounting base
Thermal resistance junction to in free air - 60 - K/W
ambient
Philips Semiconductors Product specification
Damper diode BY329-1500, BY329-1500S
fast, high-voltage
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
BY329 1500 1500S 1500 1500S
V
F
I
R
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
t
rr
Q
s
V
fr
t
fr
Forward voltage IF = 6.5 A 1.1 1.3 1.45 1.6 V
IF = 6.5 A; Tj = 125 ˚C 1.05 1.2 1.35 1.5 V
Reverse current VR = 1300 V - 250 - 250 µA
VR = 1300 V; Tj = 125 ˚C - 1 - 1 mA
BY329 1500 1500S 1500 1500S
Reverse recovery time IF = 1 A; VR ≥ 30 V; 0.18 0.13 0.23 0.16 µs
dIF/dt = 50A/µs
Reverse recovery charge IF = 2 A; -dIF/dt = 20 A/µs 1.6 0.7 2.0 0.95 µC
Peak forward recovery voltage IF = 6.5A; dIF/dt = 50A/µs 17233040V
Forward recovery time IF = 6.5A; dIF/dt = 50A/µs 210 220 300 320 ns
I
10%
V
F
tfr
F
time
V
5V
V
F
fr
time
I
F
I
R
Fig.1. Definition of Vfr and tfr Fig.2. Definition of trr and Q
dI
F
dt
trr
time
Qs
25%
s
100%
September 1998 2 Rev 1.100