Philips by329 DATASHEETS
Philips Semiconductors Product specification
Rectifier diodes BY329 series
fast, soft-recovery
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 800 V/ 1000 V/ 1200 V
• Fast switching
• Soft recovery characteristic I
• High thermal cycling performance
• Low thermal resistance I
k a
12
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
= 8 A
F(AV)
≤ 75 A
FSM
trr ≤ 135 ns
Glass-passivated double diffused PIN DESCRIPTION
rectifier diodes featuring low
tab
forward voltage drop, fast reverse 1 cathode
recovery and soft recovery
characteristic. The devices are 2 anode
intended for use in TV receivers,
monitorsandswitchedmodepower tab cathode
supplies.
1
The BY329 series is supplied in the
2
conventional leaded SOD59
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BY329 -800 -1000 -1200
V
RSM
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FRM
I
FSM
I2tI
T
stg
T
j
Peak non-repetitive reverse - 800 1000 1200 V
voltage
Peak repetitive reverse voltage - 800 1000 1200 V
Crest working reverse voltage - 600 800 1000 V
Average forward current
1
square wave; δ = 0.5; - 8 A
Tmb ≤ 122 ˚C
sinusoidal; a = 1.57; - 7 A
Tmb ≤ 125 ˚C
RMS forward current - 11 A
Repetitive peak forward current t = 25 µs; δ = 0.5; - 16 A
Tmb ≤ 122 ˚C
Non-repetitive peak forward t = 10 ms - 75 A
current. t = 8.3 ms - 82 A
sinusoidal; Tj = 150 ˚C prior
to surge; with reapplied
V
2
t for fusing t = 10 ms - 28 A2s
RWM(max)
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
1 Neglecting switching and reverse current losses.
September 1998 1 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes BY329 series
fast, soft-recovery
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
t
rr
Q
s
dIR/dt Maximum slope of the reverse IF = 2 A; -dIF/dt = 20 A/µs - 50 60 A/µs
Thermal resistance junction to - - 2.0 K/W
mounting base
Thermal resistance junction to in free air. - 60 - K/W
ambient
Forward voltage IF = 20 A - 1.5 1.85 V
Reverse current VR = V
; Tj = 125 ˚C - 0.1 1.0 mA
RWM
Reverse recovery time IF = 1 A; VR > 30 V; -dIF/dt = 50 A/µs - 100 135 ns
Reverse recovery charge IF = 2 A; VR > 30 V; -dIF/dt = 20 A/µs - 0.5 0.7 µC
recovery current
September 1998 2 Rev 1.200
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