Philips Semiconductors Product specification
Rectifier diodes BY249 series
general purpose
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 300 V / 600 V / 800 V
• High thermal cycling performance
• Low thermal resistance VF ≤ 1.05 V
I
F(AV)
= 7 A
I
FSM
≤ 60 A
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
Glass-passivated double diffused PIN DESCRIPTION
rectifier diodes. The devices are
intended for low frequency power 1 cathode
rectifier applications.
2 anode
The BY249series is supplied inthe
conventional leaded SOD59 tab cathode
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX.UNIT UNIT
BY249 -300 -600 -800
V
RSM
Peak non-repetitive reverse - 300 600 800 V
voltage
V
RRM
Peak repetitive reverse - 300 600 800 V
voltage
V
RWM
Crest working reverse voltage - 200 500 700 V
V
R
Continuous reverse voltage - 200 500 700 V
I
F(AV)
Average forward current
1
sinusoidal; a = 1.57; Tmb ≤ 131 ˚C - 7 A
I
F(RMS)
RMS forward current - 11 A
I
FRM
Peak repetitive forward sinusoidal; a = 1.57; - 60 A
current
I
FSM
Peak non-repetitive forward t = 10 ms - 60 A
current. t = 8.3 ms - 66 A
sinusoidal; Tj = 150 ˚C prior to
surge; with reapplied V
RWM(max)
I2tI
2
t for fusing t = 10 ms - 18 A2s
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 150 ˚C
temperature
k a
12
1
tab
2
1 Neglecting switching and reverse current losses.
September 1998 1 Rev 1.300