Philips BY249-600, BY249-300, BY249-800 Datasheet
Philips Semiconductors Product specification
Rectifier diodes BY249 series
general purpose
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 300 V / 600 V / 800 V
• High thermal cycling performance
• Low thermal resistance VF ≤ 1.05 V
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
k a
12
I
I
FSM
F(AV)
= 7 A
≤ 60 A
Glass-passivated double diffused PIN DESCRIPTION
rectifier diodes. The devices are
tab
intended for low frequency power 1 cathode
rectifier applications.
2 anode
The BY249series is supplied inthe
conventional leaded SOD59 tab cathode
(TO220AC) package.
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX.UNIT UNIT
BY249 -300 -600 -800
V
RSM
V
RRM
V
RWM
V
R
I
F(AV)
I
F(RMS)
I
FRM
I
FSM
I2tI
T
stg
T
j
Peak non-repetitive reverse - 300 600 800 V
voltage
Peak repetitive reverse - 300 600 800 V
voltage
Crest working reverse voltage - 200 500 700 V
Continuous reverse voltage - 200 500 700 V
Average forward current
1
sinusoidal; a = 1.57; Tmb ≤ 131 ˚C - 7 A
RMS forward current - 11 A
Peak repetitive forward sinusoidal; a = 1.57; - 60 A
current
Peak non-repetitive forward t = 10 ms - 60 A
current. t = 8.3 ms - 66 A
sinusoidal; Tj = 150 ˚C prior to
2
t for fusing t = 10 ms - 18 A2s
surge; with reapplied V
RWM(max)
Storage temperature -40 150 ˚C
Operating junction - 150 ˚C
temperature
1 Neglecting switching and reverse current losses.
September 1998 1 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BY249 series
general purpose
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Thermal resistance junction to - - 2.0 K/W
mounting base
Thermal resistance junction to in free air. - 60 - K/W
ambient
Forward voltage IF = 20 A - 1.2 1.6 V
IF = 5 A; Tj = 100 ˚C - 0.9 1.05 V
Reverse current VR = V
; Tj = 125 ˚C - 0.1 0.4 mA
RWM
September 1998 2 Rev 1.300
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