Philips bux86p 87p DATASHEETS
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUX86P
BUX87P
GENERAL DESCRIPTION
High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
BUX 86P 87P
V
CESM
V
CEO
V
CESAT
I
C
I
CM
P
tot
t
f
PINNING - SOT82 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 800 1000 V
Collector-emitter voltage (open base) - 400 450 V
Collector-emitter saturation voltage IC = 0.2 A; IB = 20 mA - 1 V
Collector current (DC) - 0.5 A
Collector current peak value - 1 A
Total power dissipation Tmb ≤ 25 ˚C - 42 W
Fall time IC = 0.2 A; I
= 20 mA 0.28 - µs
B(on)
PIN DESCRIPTION
c
1 emitter
2 collector
b
3 base
23
1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BUX 86P 87P
V
V
V
I
C
I
CM
I
B
I
BM
-I
P
T
T
CESM
CEO
EBO
BM
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 800 1000 V
Collector-emitter voltage (open base) - 400 450 V
Emitter-base voltage (open collector) - 5 V
Collector current (DC) - 0.5 A
Collector current (peak value) tp = 2 ms - 1 A
Base current (DC) - 0.2 A
Base current (peak value) - 0.3 A
Reverse base current (peak value)
1
- 0.3 A
Total power dissipation Tmb ≤ 25 ˚C - 42 W
Storage temperature -40 150 ˚C
Junction temperature - 150 ˚C
e
1 Turn-off current.
November 1995 1 Rev 1.100
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUX86P
BUX87P
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
V
CEsat
V
CEsat
V
BEsat
h
FE
V
CEOsust
Junction to mounting base - 3 K/W
Junction to ambient in free air 100 - K/W
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
CESMmax
; - - 1.0 mA
CESMmax
- - 100 µA
Tj = 125 ˚C
Emitter cut-off current VEB = 5 V; IC = 0 A - - 1 mA
Collector-emitter saturation voltages IC = 0.1 A; IB = 10 mA - - 0.8 V
IC = 0.2 A; IB = 20 mA - - 1 V
Base-emitter saturation voltage IC = 0.2 A; IB = 20 mA - - 1 V
DC current gain IC = 50 mA; VCE = 5 V 26 50 125
Collector-emitter sustaining voltage IC = 100 mA; BUX86P 400 - - V
I
= 0; L = 25 mH BUX87P 450 - - V
Boff
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load). IC = 0.2 A; I
VCC = 250 V
t
on
t
s
t
f
t
f
Turn-on time 0.25 0.5 µs
Turn-off storage time 2 3.5 µs
Turn-off fall time 0.28 - µs
Turn-off fall time Tmb = 95 ˚C - 1.3 µs
= 20 mA; -I
Bon
= 40 mA;
Boff
November 1995 2 Rev 1.100
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