Philips BUX84S Datasheet
Philips Semiconductors Product specification
NPN high voltage BUX84S
Power transistor
FEATURES SYMBOL QUICK REFERENCE DATA
• Fast switching V
• Excellent thermal stability
c
• High thermal cycling performance V
CESM
CEO
= 800 V
= 400 V
• Low thermal resistance
• Surface mounting package IC = 2 A
b
e
V
≤ 1 V (IC = 1 A)
CE(SAT)
tf = 0.4 µs (typ)
GENERAL DESCRIPTION PINNING SOT428
High voltage, high speed glass PIN DESCRIPTION
passivatedNPN power transistor in
a plastic package. 1 base
Applications:- 2 collector
1
Off-line SMPS
TV and monitor power supplies 3 emitter
Inverters
Electronic lighting ballasts 4 collector (tab)
The BUX84S is supplied in the
SOT428 (DPAK) surface mounting
package.
tab
2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
Tj, T
Collector-emitter voltage VBE = 0 V - 800 V
(peak value)
Collector-emitter voltage base open circuit - 400 V
(DC)
Emitter-base voltage collector open circuit - 5 V
Collector current (DC) - 2 A
Collector current (peak tp = 2 ms - 3 A
value)
Base current (DC) - 0.75 A
Base current (peak value) - 1 A
Reverse base current (peak - 1 A
value during turn-off)
Total power dissipation Tmb = 25 ˚C - 50 W
Operating junction and - 65 150 ˚C
stg
storage temperature
1 It is not possible to make connection to pin:2 of the SOT428 package.
February 1999 1 Rev 1.000
Philips Semiconductors Product specification
NPN high voltage BUX84S
Power transistor
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
For characteristic curves, refer to BUX84 data sheet.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CEO(sust
V
CE(SAT)
V
BE(SAT)
I
CES
I
EBO
h
FE
f
T
t
on
t
f
t
s
Thermal resistance junction - - 2.5 K/W
to mounting base
Thermal resistance junction pcb mounted, FR4 board, minimum - 50 - K/W
to ambient footprint
Collector-emitter sustaining IC = 100 mA; I
= 0 A; L = 25 mH 400 - - V
B(OFF)
voltage
Collector-emitter saturation IC = 0.3 A; IB = 30 mA - - 0.8 V
voltage IC = 1 A; IB = 0.2 A - - 1 V
Base-emitter saturation IC = 1 A; IB = 0.2 A - - 1.1 V
voltage
Collector-emitter cut-off V
current V
= 800 V; VBE = 0 V - - 200 µA
CEM
= 800 V; VBE = 0 V; Tj = 125˚C - - 1.5 mA
CEM
Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 1 mA
DC current gain VCE = 5 V; IC = 5 mA 15 - -
VCE = 5 V; IC = 100 mA 20 50 100
Transition frequency VCE = 10 V; IC = 200 mA; f = 1 MHz - 20 - MHz
Turn-on time I
C(on)
= 1 A; I
= 200 mA; I
B(on)
= -400 mA; - 0.2 0.5 µs
B(off)
VCC = 250 V
Fall time Tj = 25˚C - 0.4 - µs
Tj = 95˚C - - 1.4 µs
Storage time - 2 3.5 µs
February 1999 2 Rev 1.000
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