Philips BUX85F, BUX84F Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BUX84F; BUX85F

Silicon diffused power transistors

Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06

1997 Aug 14

Philips Semiconductors Product specification

Silicon diffused power transistors BUX84F; BUX85F

DESCRIPTION

High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.

PINNING

PIN DESCRIPTION

1 base
2 collector

1

3 emitter

APPLICATIONS

mb mounting base;

MBB008

electrically isolated

• Converters

• Inverters

from all pins

1

23

MBK109

• Switching regulators

• Motor control systems.

Fig.1 Simplified outline

(SOT186) and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CESM

collector-emitter peak voltage VBE=0

BUX84F − 800 V
BUX85F − 1000 V

V

CEO

collector-emitter voltage open base

BUX84F − 400 V
BUX85F − 450 V

V

CEsat

I

Csat

I

C

I

CM

P

tot

t

f

collector-emitter saturation voltage see Fig.4 − 1V
collector saturation current − 1A
collector current (DC) − 2A
collector current (peak value) − 3A
total power dissipation Th≤ 25 °C − 18 W
fall time 0.4 −µs

2

3

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-h

thermal resistance from junction to external heatsink note 1 7.2 K/W

note 2 4.7 K/W

R

th j-a

thermal resistance from junction to ambient 55 K/W

Notes

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

2. Mounted with heatsink compound and 30 ±5 N force on centre of package.

ISOLATION CHARACTERISTICS

SYMBOL PARAMETER TYP. MAX. UNIT

V
C

isolM
isol

isolation voltage from all terminals to external heatsink (peak value) − 1500 V
isolation capacitance from collector to external heatsink 12 − pF

1997 Aug 14 2

Philips Semiconductors Product specification

Silicon diffused power transistors BUX84F; BUX85F

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CESM

V

CEO

I

C

I

CM

I

B

I

BM

P

tot

T

stg

T

j

collector-emitter peak voltage VBE=0

BUX84F − 800 V
BUX85F − 1000 V

collector-emitter voltage open base

BUX84F − 400 V

BUX85F − 450 V
collector current (DC) − 2A
collector current (peak value) − 3A
base current (DC) − 0.75 A
base current (peak value) − 1A
total power dissipation Th≤ 25 °C; note 1 − 18 W
storage temperature −65 +150 °C
junction temperature − 150 °C

Note

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CEOsust

collector-emitter sustaining voltage IC= 100 mA; I

BUX84 400 −−V

L = 25 mH; see Figs 2 and 3

Boff

=0;

BUX85 450 −−V

V

CEsat

collector-emitter saturation voltage IC= 0.3 A; IB=30mA;

−−0.8 V

see Fig.4
I

= 1 A; IB= 200 mA;

C

−−1V

see Fig.4

V

BEsat

base-emitter saturation voltage IC= 1 A; IB= 200 mA;

−−1.1 V

see Fig.5

I

CES

collector-emitter cut-off current VCE=V

V

CE=VCESmax

; VBE=0 −−0.2 mA

CESmax

; VBE=0;

−−1.5 mA

Tj= 125 °C

I

EBO

h

FE

emitter-base cut-off current VEB=5V; IC=0 −−1mA
DC current gain VCE=5V; IC= 5 A; see Fig.6 15 −−

V

=5V; IC= 100 mA;

CE

20 50 100

see Fig.6

f

T

transition frequency VCE=10V; IC= 200 mA;

− 20 − MHz

f=1MHz

1997 Aug 14 3

Philips Semiconductors Product specification

Silicon diffused power transistors BUX84F; BUX85F

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Switching times resistive load (see Fig.7)

t

on

t

s

t

f

turn-on time I

storage time I

fall time I

= 1 A; I

Con

I

= −400 mA; VCC= 250 V

Boff

= 1 A; I

Con

I

= −400 mA; VCC= 250 V

Boff

= 1 A; I

Con

I

= −400 mA; VCC= 250 V

Boff

I

= 1 A; I

Con

= −400 mA; VCC= 250 V;

I

Boff

= 200 mA;

Bon

= 200 mA;

Bon

= 200 mA;

Bon

= 200 mA;

Bon

Tmb=95°C

− 0.2 0.5 µs

− 2 3.5 µs

− 0.4 −µs

−−1.4 µs

ndbook, halfpage

30 to 60 Hz

Fig.2 Test circuit for collector-emitter

100 to 200 Ω

L

300 Ω

6 V

sustaining voltage.

horizontal

oscilloscope

vertical

1 Ω

MGE252

+ 50 V

I

handbook, halfpage

C

(mA)

250
200

100

0

min

V

CEOsust

Fig.3 Oscilloscope display for collector-emitter

sustaining voltage.

MGE239

VCE (V)

1997 Aug 14 4