Philips BUX85F, BUX84F Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BUX84F; BUX85F
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 14
Philips Semiconductors Product specification
Silicon diffused power transistors BUX84F; BUX85F
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.
PINNING
PIN DESCRIPTION
1 base
2 collector
1
3 emitter
APPLICATIONS
mb mounting base;
MBB008
electrically isolated
• Converters
• Inverters
from all pins
1
23
MBK109
• Switching regulators
• Motor control systems.
Fig.1 Simplified outline
(SOT186) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
collector-emitter peak voltage VBE=0
BUX84F − 800 V
BUX85F − 1000 V
V
CEO
collector-emitter voltage open base
BUX84F − 400 V
BUX85F − 450 V
V
CEsat
I
Csat
I
C
I
CM
P
tot
t
f
collector-emitter saturation voltage see Fig.4 − 1V
collector saturation current − 1A
collector current (DC) − 2A
collector current (peak value) − 3A
total power dissipation Th≤ 25 °C − 18 W
fall time 0.4 −µs
2
3
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-h
thermal resistance from junction to external heatsink note 1 7.2 K/W
note 2 4.7 K/W
R
th j-a
thermal resistance from junction to ambient 55 K/W
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
ISOLATION CHARACTERISTICS
SYMBOL PARAMETER TYP. MAX. UNIT
V
C
isolM
isol
isolation voltage from all terminals to external heatsink (peak value) − 1500 V
isolation capacitance from collector to external heatsink 12 − pF
1997 Aug 14 2
Philips Semiconductors Product specification
Silicon diffused power transistors BUX84F; BUX85F
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
collector-emitter peak voltage VBE=0
BUX84F − 800 V
BUX85F − 1000 V
collector-emitter voltage open base
BUX84F − 400 V
BUX85F − 450 V
collector current (DC) − 2A
collector current (peak value) − 3A
base current (DC) − 0.75 A
base current (peak value) − 1A
total power dissipation Th≤ 25 °C; note 1 − 18 W
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CEOsust
collector-emitter sustaining voltage IC= 100 mA; I
BUX84 400 −−V
L = 25 mH; see Figs 2 and 3
Boff
=0;
BUX85 450 −−V
V
CEsat
collector-emitter saturation voltage IC= 0.3 A; IB=30mA;
−−0.8 V
see Fig.4
I
= 1 A; IB= 200 mA;
C
−−1V
see Fig.4
V
BEsat
base-emitter saturation voltage IC= 1 A; IB= 200 mA;
−−1.1 V
see Fig.5
I
CES
collector-emitter cut-off current VCE=V
V
CE=VCESmax
; VBE=0 −−0.2 mA
CESmax
; VBE=0;
−−1.5 mA
Tj= 125 °C
I
EBO
h
FE
emitter-base cut-off current VEB=5V; IC=0 −−1mA
DC current gain VCE=5V; IC= 5 A; see Fig.6 15 −−
V
=5V; IC= 100 mA;
CE
20 50 100
see Fig.6
f
T
transition frequency VCE=10V; IC= 200 mA;
− 20 − MHz
f=1MHz
1997 Aug 14 3
Philips Semiconductors Product specification
Silicon diffused power transistors BUX84F; BUX85F
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Switching times resistive load (see Fig.7)
t
on
t
s
t
f
turn-on time I
storage time I
fall time I
= 1 A; I
Con
I
= −400 mA; VCC= 250 V
Boff
= 1 A; I
Con
I
= −400 mA; VCC= 250 V
Boff
= 1 A; I
Con
I
= −400 mA; VCC= 250 V
Boff
I
= 1 A; I
Con
= −400 mA; VCC= 250 V;
I
Boff
= 200 mA;
Bon
= 200 mA;
Bon
= 200 mA;
Bon
= 200 mA;
Bon
Tmb=95°C
− 0.2 0.5 µs
− 2 3.5 µs
− 0.4 −µs
−−1.4 µs
ndbook, halfpage
30 to 60 Hz
Fig.2 Test circuit for collector-emitter
100 to 200 Ω
L
300 Ω
6 V
sustaining voltage.
horizontal
oscilloscope
vertical
1 Ω
MGE252
+ 50 V
I
handbook, halfpage
C
(mA)
250
200
100
0
min
V
CEOsust
Fig.3 Oscilloscope display for collector-emitter
sustaining voltage.
MGE239
VCE (V)
1997 Aug 14 4
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