Philips BUW13W, BUW13AW Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BUW13W; BUW13AW
Silicon diffused power transistors
Product specification
File under Discrete Semiconductors, SC06
1997 Aug 13
Philips Semiconductors Product specification
Silicon diffused power transistors BUW13W; BUW13AW
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT429 package.
APPLICATIONS
e
• Converters
• Inverters
1
2
• Switching regulators
• Motor control systems.
PINNING
123
MBK117
MBB008
3
PIN DESCRIPTION
1 base
2 collector; connected to
mounting base
Fig.1 Simplified outline (SOT429) and symbol.
3 emitter
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
CESM
collector-emitter peak voltage VBE=0
BUW13W 850 V
BUW13AW 1000 V
V
CEO
collector-emitter voltage open base
BUW13W 400 V
BUW13AW 450 V
V
I
I
P
t
C
CM
f
CEsat
tot
collector-emitter saturation voltage see Figs 7 and 9 1.5 V
collector current (DC) see Figs 2 and 4 15 A
collector current (peak value) see Fig 2 30 A
total power dissipation Tmb≤ 25 °C; see Fig.3 175 W
fall time resistive load; see Figs 11 and 12 0.8 µs
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-mb
thermal resistance from junction to mounting base 0.7 K/W
1997 Aug 13 1
Philips Semiconductors Product specification
Silicon diffused power transistors BUW13W; BUW13AW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
collector-emitter peak voltage VBE=0
BUW13W − 850 V
BUW13AW − 1000 V
collector-emitter voltage open base
BUW13W − 400 V
BUW13AW − 450 V
collector current (DC) see Figs 2 and 4 − 15 A
collector current (peak value) tp< 2 ms; see Fig 2 − 30 A
base current (DC) − 6A
base current (peak value) tp<2ms − 9A
total power dissipation Tmb≤ 25 °C; see Fig.3 − 175 W
storage temperature −65 +150 °C
junction temperature − 150 °C
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CEOsust
collector-emitter sustaining voltage IC= 100 mA; I
BUW13W 400 −−V
L = 25 mH; see Figs 5 and 6
Boff
=0;
BUW13AW 450 −−V
V
CEsat
collector-emitter saturation voltage
BUW13W I
= 10 A; IB= 2 A; see
C
−−1.5 V
Figs 7 and 9
BUW13AW I
= 8 A; IB= 1.6 A; see
C
−−1.5 V
Figs 7 and 9
V
I
CES
BEsat
base-emitter saturation voltage
BUW13W I
BUW13AW I
= 10 A; IB= 2 A; see Fig.7 −−1.6 V
C
= 8 A; IB= 1.6 A; see Fig.7 −−1.6 V
C
collector-emitter cut-off current VCE=V
V
CE=VCESMmax
CESMmax
; VBE= 0; note 1 −−1mA
; VBE=0;
−−4mA
Tj= 125 °C; note 1
I
EBO
h
FE
emitter-base cut-off current VEB=9V; IC=0 −−10 mA
DC current gain VCE=5V; IC= 20 mA;
10 18 35
see Fig.10
V
=5V; IC= 1.5 A;
CE
10 20 35
see Fig.10
1997 Aug 13 2
Philips Semiconductors Product specification
Silicon diffused power transistors BUW13W; BUW13AW
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Switching times resistive load (see Figs 11 and 12)
t
on
t
s
t
f
Switching times inductive load (see Figs 13 and 14)
t
s
t
f
turn-on time
BUW13W I
BUW13AW I
storage time
BUW13W I
BUW13AW I
fall time
BUW13W I
BUW13AW I
storage time
BUW13W I
BUW13AW I
fall time
BUW13W I
BUW13AW I
= 10 A; I
Con
= 8 A; I
Con
= 10 A; I
Con
= 8 A; I
Con
= 10 A; I
Con
= 8 A; I
Con
= 10 A; IB=2A − 2.3 3 µs
Con
I
= 10 A; IB= 2 A; Tj= 100 °C − 2.5 3.2 µs
Con
= 8 A; IB= 1.6 A − 2.3 3 µs
Con
I
= 8 A; IB= 1.6 A;
Con
Bon
Bon
Bon
Bon
Bon
Bon
= −I
= −I
= −I
= −I
= −I
= −I
=2A −−1µs
Boff
= 1.6 A −−1µs
Boff
=2A −−4µs
Boff
= 1.6 A −−4µs
Boff
=2A −−0.8 µs
Boff
= 1.6 A −−0.8 µs
Boff
− 2.5 3.2 µs
Tj= 100 °C
= 10 A; IB=2A − 80 150 ns
Con
= 10 A; IB= 2 A; Tj= 100 °C − 140 300 ns
I
Con
= 8 A; IB= 1.6 A − 80 150 ns
Con
I
= 8 A; IB= 1.6 A;
Con
− 140 300 ns
Tj= 100 °C
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13 3
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