Philips BUW13F, BUW13AF Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BUW13F; BUW13AF

Silicon diffused power transistors

Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06

1997 Aug 13

Philips Semiconductors Product specification

Silicon diffused power transistors BUW13F; BUW13AF

DESCRIPTION

High-voltage, high-speed,

ok, halfpage

glass-passivated NPN power
transistor in a SOT199 package.

APPLICATIONS

• Converters

handbook, halfpage

2

• Inverters

• Switching regulators

• Motor control systems.

1

MBB008

3

PINNING

PIN DESCRIPTION

1 base
2 collector

123

Front view

MSB012

3 emitter

mb mounting base;

Fig.1 Simplified outline (SOT199) and symbol.

electrically isolated

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

CESM

collector-emitter peak voltage VBE=0

BUW13F 850 V
BUW13AF 1000 V

V

CEO

collector-emitter voltage open base

BUW13F 400 V

BUW13AF 450 V
V
I

Csat

CEsat

collector-emitter saturation voltage see Figs 8 and 10 1.5 V
collector saturation current

BUW13F 10 A

BUW13AF 8 A
I
I
P
t

C
CM

tot

f

collector current (DC) see Figs 3 and 4 15 A
collector current (peak value) tp< 20 ms; see Fig 4 30 A
total power dissipation Th≤ 25 °C; see Fig.2 37 W
fall time resistive load; see Fig.13 0.8 µs

1997 Aug 13 2

Philips Semiconductors Product specification

Silicon diffused power transistors BUW13F; BUW13AF

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-h

R

th j-a

Notes

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

2. Mounted with heatsink compound and 30 ±5 N force on centre of package.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CESM

V

CEO

I

Csat

I

C

I

CM

I

B

I

BM

P

tot

T

stg

T

j

thermal resistance from junction to external heatsink note 1 3.4 K/W

note 2 2.5 K/W

thermal resistance from junction to ambient 35 K/W

collector-emitter peak voltage VBE=0

BUW13F − 850 V
BUW13AF − 1000 V

collector-emitter voltage open base

BUW13F − 400 V
BUW13AF − 450 V

collector saturation current

BUW13F − 10 A

BUW13AF − 8A
collector current (DC) see Figs 3 and 4 − 15 A
collector current (peak value) tp< 20 ms; see Fig 4 − 30 A
base current (DC) − 6A
base current (peak value) tp= −20 ms − 9A
total power dissipation Th≤ 25 °C; see Fig.2; note 1 − 37 W

T

≤ 25 °C; see Fig.2; note 2 − 50 W

h

storage temperature −65 +150 °C
junction temperature − 150 °C

Notes

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

2. Mounted with heatsink compound and 30 ±5 N force on centre of package.

ISOLATION CHARACTERISTICS

SYMBOL PARAMETER MAX. UNIT

V
C

isolM
isol

isolation voltage from all terminals to external heatsink (peak value); note 1 2000 V
isolation capacitance from collector to external heatsink 21 pF

Note

1. Repetitive peak operation with RH ≤ 65% under clean and dust-free conditions.

1997 Aug 13 3

Philips Semiconductors Product specification

Silicon diffused power transistors BUW13F; BUW13AF

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CEOsust

V

CEsat

V

BEsat

I

Csat

I

CES

I

EBO

h

FE

collector-emitter sustaining voltage IC= 100 mA; I

BUW13F 400 −−V

L = 25 mH; see Figs 6 and 7

BUW13AF 450 −−V
collector-emitter saturation voltage

BUW13F I

= 10 A; IB= 2 A; see

C

Figs 8 and 10

BUW13AF I

= 8 A; IB= 1.6 A; see

C

Figs 8 and 10

base-emitter saturation voltage

BUW13F I

BUW13AF I

= 10 A; IB= 2 A; see Fig.8 −−1.6 V

C

= 8 A; IB= 1.6 A;

C

see Fig.8

collector saturation current VCE= 1.5 V

BUW13F −−10 A

BUW13AF −−8A
collector-emitter cut-off current VCE=V

CESMmax

note 1
V

CE=VCESMmax

Tj= 125 °C; note 1
emitter-base cut-off current VEB=9V; IC=0 −−10 mA
DC current gain VCE=5V; IC= 20 mA;

see Fig.11

V

=5V; IC= 1.5 A;

CE

see Fig.11

=0;

Boff

; VBE=0;

; VBE=0;

−−1.5 V

−−1.5 V

−−1.6 V

−−1mA

−−4mA

10 18 35

10 20 35

Switching times resistive load (see Figs 12 and 13)
t

on

t

s

t

f

turn-on time

BUW13F I
BUW13AF I

storage time

BUW13F I
BUW13AF I

fall time

BUW13F I
BUW13AF I

Con
Con

Con
Con

Con
Con

= 10 A; I
= 8 A; I

= 10 A; I
= 8 A; I

= 10 A; I

= 8 A; I
Switching times inductive load (see Figs 14 and 15)
t

s

storage time

BUW13F I

= 10 A; IB=2A;

Con

VCL= 250 V; Tc= 100 °C

BUW13AF I

= 8 A; IB= 1.6 A;

Con

VCL= 300 V; Tc= 100 °C

1997 Aug 13 4

Bon=IBoff

Bon=IBoff

Bon=IBoff

Bon=IBoff

Bon=IBoff

Bon=IBoff

=2A −−1µs

= 1.6 A −−1µs

=2A −−4µs

= 1.6 A −−4µs

=2A −−0.8 µs

= 1.6 A −−0.8 µs

− 2.8 3.5 µs

− 2.8 3.5 µs

Philips Semiconductors Product specification

Silicon diffused power transistors BUW13F; BUW13AF

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

t

f

Note

1. Measured with a half-sinewave voltage (curve tracer).

fall time

BUW13F I

BUW13AF I

= 10 A; IB=2A;

Con

VCL= 250 V; Tc= 100 °C

= 8 A; IB= 1.6 A;

Con

VCL= 300 V; Tc= 100 °C

− 200 300 ns

− 200 300 ns

120

handbook, halfpage

P

tot max

(%)

80

40

0

050

100 150

T

h

Fig.2 Power derating curve.

o

(

MGK674

C)

20

handbook, halfpage

I

C

(A)

10

0

0 400

Tc≤ 100°C; VBE= −1to−5V.

Fig.3 Reverse bias SOAR.

800

MGB896

BUW13F
BUW13AF

VCE (V)

1200

1997 Aug 13 5