Philips BUW12F, BUW12AF Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BUW12F; BUW12AF
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 14
Philips Semiconductors Product specification
Silicon diffused power transistors BUW12F; BUW12AF
DESCRIPTION
High-voltage, high-speed,
ok, halfpage
glass-passivated NPN power
transistor in a SOT199 package.
APPLICATIONS
• Converters
handbook, halfpage
2
• Inverters
• Switching regulators
• Motor control systems.
1
MBB008
3
PINNING
PIN DESCRIPTION
1 base
2 collector
123
Front view
MSB012
3 emitter
mb mounting base;
Fig.1 Simplified outline (SOT199) and symbol.
electrically isolated
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
CESM
collector-emitter peak voltage VBE=0
BUW12F 850 V
BUW12AF 1000 V
V
CEO
collector-emitter voltage open base
BUW12F 400 V
BUW12AF 450 V
V
I
Csat
CEsat
collector-emitter saturation voltage see Figs 6 and 10 1.5 V
collector saturation current
BUW12F 6 A
BUW12AF 5 A
I
I
P
t
C
CM
tot
f
collector current (DC) see Figs 2 and 5 8 A
collector current (peak value) see Fig 2 20 A
total power dissipation Th≤ 25 °C; see Fig.4 34 W
fall time resistive load; see Figs 12 and 13 0.8 µs
1997 Aug 14 2
Philips Semiconductors Product specification
Silicon diffused power transistors BUW12F; BUW12AF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-h
R
th j-a
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
Csat
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
thermal resistance from junction to external heatsink note 1 3.7 K/W
note 2 2.8 K/W
thermal resistance from junction to ambient 35 K/W
collector-emitter peak voltage VBE=0
BUW12F − 850 V
BUW12AF − 1000 V
collector-emitter voltage open base
BUW12F − 400 V
BUW12AF − 450 V
collector saturation current VCE= 1.5 V
BUW12F − 6A
BUW12AF − 5A
collector current (DC) see Figs 2 and 5 − 8A
collector current (peak value) see Fig 2 − 20 A
base current (DC) − 4A
base current (peak value) − 6A
total power dissipation Th≤ 25 °C; see Fig.4; note 1 − 34 W
T
≤ 25 °C; see Fig.4; note 2 − 45 W
h
storage temperature −65 +150 °C
junction temperature − 150 °C
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
ISOLATION CHARACTERISTICS
SYMBOL PARAMETER MAX. UNIT
V
C
isolM
isol
isolation voltage from all terminals to external heatsink (peak value) 1500 V
isolation capacitance from collector to external heatsink 21 pF
1997 Aug 14 3
Philips Semiconductors Product specification
Silicon diffused power transistors BUW12F; BUW12AF
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CEOsust
collector-emitter sustaining voltage IC= 100 mA; I
BUW12F 400 −−V
see Figs 8 and 9
BUW12AF 450 −−V
V
CEsat
V
BEsat
I
CES
collector-emitter saturation voltage
BUW12F I
BUW12AF I
= 6 A; IB= 1.2 A; see Figs 6 and 10 −−1.5 V
C
= 5 A; IB= 1 A; see Figs 6 and 10 −−1.5 V
C
base-emitter saturation voltage
BUW12F I
BUW12AF I
= 6 A; IB= 1.2 A; see Fig.6 −−1.5 V
C
= 5 A; IB= 1 A; see Fig.6 −−1.5 V
C
collector-emitter cut-off current VCE=V
V
CE=VCESMmax
Tj= 125 °C; note 1
I
EBO
h
FE
emitter-base cut-off current VEB=9V; IC=0 −−10 mA
DC current gain VCE=5V; IC= 10 mA; see Fig.11 10 18 35
V
CE
Switching times resistive load (see Figs 12 and 13)
t
on
t
s
t
f
turn-on time
BUW12F I
BUW12AF I
storage time
BUW12F I
BUW12AF I
fall time
BUW12F I
BUW12AF I
Con
Con
Con
Con
Con
Con
Switching times inductive load (see Figs 14 and 15)
t
s
storage time
BUW12F I
Con
Tc= 100 °C
BUW12AF I
Con
Tc= 100 °C
t
f
fall time
BUW12F I
Con
Tc= 100 °C
BUW12AF I
Con
Tc= 100 °C
CESMmax
=5V; IC= 1 A; see Fig.11 10 20 35
= 6 A; I
= 5 A; I
= 6 A; I
= 5 A; I
= 6 A; I
= 5 A; I
= 6 A; IB= 1.2 A; VCL= 250 V;
= 5 A; IB= 1 A; VCL= 300 V;
= 6 A; IB= 1.2 A; VCL= 250 V;
= 5 A; IB= 1 A; VCL= 300 V;
= 0; L = 25 mH;
Boff
; VBE= 0; note 1 −−1mA
; VBE=0;
Bon=IBoff
Bon=IBoff
Bon=IBoff
Bon=IBoff
Bon=IBoff
Bon=IBoff
= 1.2 A −−1µs
=1A −−1µs
= 1.2 A −−4µs
=1A −−4µs
= 1.2 A −−0.8 µs
=1A −−0.8 µs
−−3mA
− 1.9 2.5 µs
− 1.9 2.5 µs
− 200 300 ns
− 200 300 ns
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 14 4
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