Philips BUW12F, BUW12AF Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BUW12F; BUW12AF

Silicon diffused power transistors

Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06

1997 Aug 14

Philips Semiconductors Product specification

Silicon diffused power transistors BUW12F; BUW12AF

DESCRIPTION

High-voltage, high-speed,

ok, halfpage

glass-passivated NPN power
transistor in a SOT199 package.

APPLICATIONS

• Converters

handbook, halfpage

2

• Inverters

• Switching regulators

• Motor control systems.

1

MBB008

3

PINNING

PIN DESCRIPTION

1 base
2 collector

123

Front view

MSB012

3 emitter

mb mounting base;

Fig.1 Simplified outline (SOT199) and symbol.

electrically isolated

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

CESM

collector-emitter peak voltage VBE=0

BUW12F 850 V
BUW12AF 1000 V

V

CEO

collector-emitter voltage open base

BUW12F 400 V

BUW12AF 450 V
V
I

Csat

CEsat

collector-emitter saturation voltage see Figs 6 and 10 1.5 V
collector saturation current

BUW12F 6 A

BUW12AF 5 A
I
I
P
t

C
CM

tot

f

collector current (DC) see Figs 2 and 5 8 A
collector current (peak value) see Fig 2 20 A
total power dissipation Th≤ 25 °C; see Fig.4 34 W
fall time resistive load; see Figs 12 and 13 0.8 µs

1997 Aug 14 2

Philips Semiconductors Product specification

Silicon diffused power transistors BUW12F; BUW12AF

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-h

R

th j-a

Notes

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

2. Mounted with heatsink compound and 30 ±5 N force on centre of package.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CESM

V

CEO

I

Csat

I

C

I

CM

I

B

I

BM

P

tot

T

stg

T

j

thermal resistance from junction to external heatsink note 1 3.7 K/W

note 2 2.8 K/W

thermal resistance from junction to ambient 35 K/W

collector-emitter peak voltage VBE=0

BUW12F − 850 V
BUW12AF − 1000 V

collector-emitter voltage open base

BUW12F − 400 V
BUW12AF − 450 V

collector saturation current VCE= 1.5 V

BUW12F − 6A

BUW12AF − 5A
collector current (DC) see Figs 2 and 5 − 8A
collector current (peak value) see Fig 2 − 20 A
base current (DC) − 4A
base current (peak value) − 6A
total power dissipation Th≤ 25 °C; see Fig.4; note 1 − 34 W

T

≤ 25 °C; see Fig.4; note 2 − 45 W

h

storage temperature −65 +150 °C
junction temperature − 150 °C

Notes

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

2. Mounted with heatsink compound and 30 ±5 N force on centre of package.

ISOLATION CHARACTERISTICS

SYMBOL PARAMETER MAX. UNIT

V
C

isolM
isol

isolation voltage from all terminals to external heatsink (peak value) 1500 V
isolation capacitance from collector to external heatsink 21 pF

1997 Aug 14 3

Philips Semiconductors Product specification

Silicon diffused power transistors BUW12F; BUW12AF

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CEOsust

collector-emitter sustaining voltage IC= 100 mA; I

BUW12F 400 −−V

see Figs 8 and 9

BUW12AF 450 −−V

V

CEsat

V

BEsat

I

CES

collector-emitter saturation voltage

BUW12F I

BUW12AF I

= 6 A; IB= 1.2 A; see Figs 6 and 10 −−1.5 V

C

= 5 A; IB= 1 A; see Figs 6 and 10 −−1.5 V

C

base-emitter saturation voltage

BUW12F I

BUW12AF I

= 6 A; IB= 1.2 A; see Fig.6 −−1.5 V

C

= 5 A; IB= 1 A; see Fig.6 −−1.5 V

C

collector-emitter cut-off current VCE=V

V

CE=VCESMmax

Tj= 125 °C; note 1

I

EBO

h

FE

emitter-base cut-off current VEB=9V; IC=0 −−10 mA
DC current gain VCE=5V; IC= 10 mA; see Fig.11 10 18 35

V

CE

Switching times resistive load (see Figs 12 and 13)
t

on

t

s

t

f

turn-on time

BUW12F I

BUW12AF I
storage time

BUW12F I

BUW12AF I
fall time

BUW12F I

BUW12AF I

Con
Con

Con
Con

Con
Con

Switching times inductive load (see Figs 14 and 15)
t

s

storage time

BUW12F I

Con

Tc= 100 °C

BUW12AF I

Con

Tc= 100 °C

t

f

fall time

BUW12F I

Con

Tc= 100 °C

BUW12AF I

Con

Tc= 100 °C

CESMmax

=5V; IC= 1 A; see Fig.11 10 20 35

= 6 A; I
= 5 A; I

= 6 A; I
= 5 A; I

= 6 A; I
= 5 A; I

= 6 A; IB= 1.2 A; VCL= 250 V;

= 5 A; IB= 1 A; VCL= 300 V;

= 6 A; IB= 1.2 A; VCL= 250 V;

= 5 A; IB= 1 A; VCL= 300 V;

= 0; L = 25 mH;

Boff

; VBE= 0; note 1 −−1mA
; VBE=0;

Bon=IBoff
Bon=IBoff

Bon=IBoff
Bon=IBoff

Bon=IBoff
Bon=IBoff

= 1.2 A −−1µs
=1A −−1µs

= 1.2 A −−4µs
=1A −−4µs

= 1.2 A −−0.8 µs
=1A −−0.8 µs

−−3mA

− 1.9 2.5 µs

− 1.9 2.5 µs

− 200 300 ns

− 200 300 ns

Note

1. Measured with a half-sinewave voltage (curve tracer).

1997 Aug 14 4