Philips buw11f DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
BUW11F; BUW11AF
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 14
Philips Semiconductors Product specification
Silicon diffused power transistors BUW11F; BUW11AF
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
ok, halfpage
transistor in a SOT199 package.
APPLICATIONS
• Converters
• Inverters
• Switching regulators
handbook, halfpage
1
2
• Motor control systems.
MBB008
3
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
mb mounting base;
123
Front view
MSB012
Fig.1 Simplified outline (SOT199) and symbol.
electrically isolated
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
CESM
collector-emitter peak voltage VBE=0
BUW11F 850 V
BUW11AF 1000 V
V
CEO
collector-emitter voltage open base
BUW11F 400 V
BUW11AF 450 V
V
I
Csat
CEsat
collector-emitter saturation voltage 1.5 V
collector saturation current
BUW11F 3 A
BUW11AF 2.5 A
I
I
P
t
C
CM
tot
f
collector current (DC) see Figs 2 and 4 5 A
collector current (peak value) tp< 20 ms; see Fig.2 10 A
total power dissipation Th≤ 25 °C; see Fig.3 32 W
fall time resistive load; see Figs 8 and 9 0.8 µs
1997 Aug 14 2
Philips Semiconductors Product specification
Silicon diffused power transistors BUW11F; BUW11AF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-h
R
th j-a
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
Csat
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
thermal resistance from junction to external heatsink note 1 3.95 K/W
note 2 3.05 K/W
thermal resistance from junction to ambient 35 K/W
collector-emitter peak voltage VBE=0
BUW11F − 850 V
BUW11AF − 1000 V
collector-emitter voltage open base
BUW11F − 400 V
BUW11AF − 450 V
collector saturation current
BUW11F − 3A
BUW11AF − 2.5 A
collector current (DC) see Figs 2 and 4 − 5A
collector current (peak value) tp< 20 ms; see Fig.2 − 10 A
base current (DC) − 2A
base current (peak value) tp<20ms − 4A
total power dissipation Th≤ 25 °C; see Fig.3; note 1 − 32 W
T
≤ 25 °C; see Fig.3; note 2 − 41 W
h
storage temperature −65 +150 °C
junction temperature − 150 °C
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
ISOLATION CHARACTERISTICS
SYMBOL PARAMETER TYP. MAX. UNIT
V
C
isolM
isol
isolation voltage from all terminals to external heatsink (peak value) − 1500 V
isolation capacitance from collector to external heatsink − 21 pF
1997 Aug 14 3
Philips Semiconductors Product specification
Silicon diffused power transistors BUW11F; BUW11AF
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CEOsust
V
CEsat
V
BEsat
I
Csat
I
CES
I
EBO
h
FE
Switching times resistive load (Figs 8 and 9)
t
on
t
s
t
f
Switching times inductive load (Figs 10 and 11)
t
s
t
f
collector-emitter sustaining voltage IC= 100 mA; I
BUW11F 400 −−V
see Figs 5 and 6
= 0; L = 25 mH;
Boff
BUW11AF 450 −−V
collector-emitter saturation voltage
BUW11F I
BUW11AF I
= 3 A; IB= 600 mA −−1.5 V
C
= 2.5 A; IB= 500 mA −−1.5 V
C
base-emitter saturation voltage
BUW11F I
BUW11AF I
= 3 A; IB= 600 mA −−1.4 V
C
= 2.5 A; IB= 500 mA −−1.4 V
C
collector saturation current VCE= 1.5 V
BUW11F −−3A
BUW11AF −−2.5 A
collector-emitter cut-off current VCE=V
V
CE=VCESMmax
CESMmax
; VBE= 0; note 1 −−1mA
; VBE=0;
−−2mA
Tj= 125 °C; note 1
emitter-base cut-off current VEB=9V; IC=0 −−10 mA
DC current gain VCE=5V; IC= 5 mA; see Fig.7 10 18 35
=5V; IC= 0.5 A; see Fig.7 10 20 35
V
CE
turn-on time
BUW11F I
BUW11AF I
Con
Con
= 3 A; I
= 2.5 A; I
Bon
Bon
= −I
= −I
= 600 mA −−1µs
Boff
= 500 mA −−1µs
Boff
storage time
BUW11F I
BUW11AF I
Con
Con
= 3 A; I
Bon
= 2.5 A; I
Bon
= −I
= −I
= 600 mA −−4µs
Boff
= 500 mA −−4µs
Boff
fall time
BUW11F I
BUW11AF I
Con
Con
= 3 A; I
Bon
= 2.5 A; I
Bon
= −I
= −I
= 600 mA −−0.8 µs
Boff
= 500 mA −−0.8 µs
Boff
storage time
BUW11F I
= 3 A; IB= 600 mA;
Con
− 2 2.5 µs
VCL= 250 V; Tc= 100 °C
BUW11AF I
= 2.5 A; IB= 500 mA;
Con
− 2 2.5 µs
VCL= 300 V; Tc= 100 °C
fall time
BUW11F I
= 3 A; IB= 600 mA;
Con
− 200 300 ns
VCL= 250 V; Tc= 100 °C
BUW11AF I
= 2.5 A; IB= 500 mA;
Con
− 200 300 ns
VCL= 300 V; Tc= 100 °C
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 14 4
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