Philips BUT211 Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT211
GENERAL DESCRIPTION
Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited
for high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
t
f
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 850 V
Collector-emitter voltage (open base) - 400 V
Collector current (DC) - 5 A
Collector current peak value - 10 A
Total power dissipation Tmb ≤ 25 ˚C - 100 W
Collector-emitter saturation voltage IC = 3.0 A; IB = 0.4 A - 2.0 V
Inductive fall time I
= 3.0 A; I
Con
= 0.3 A - 0.1 µs
Bon
PIN DESCRIPTION
tab
c
1 base
2 collector
b
3 emitter
tab collector
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
P
T
T
CESM
CEO
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 850 V
Collector-emitter voltage (open base) - 400 V
Collector current (DC) - 5 A
Collector current peak value - 10 A
Base current (DC) - 2 A
Base current peak value - 4 A
Total power dissipation Tmb ≤ 25 ˚C - 100 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-mb
th j-a
Junction to mounting base - 1.25 K/W
Junction to ambient in free air - 60 K/W
e
March 1996 1 Rev 1.100
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT211
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
h
FE
Collector cut-off current
Emitter cut-off current VEB = 9.0 V; IC = 0 A - - 10.0 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 400 - - V
Collector-emitter saturation voltage IC = 3.0 A;IB = 0.4 A - 0.8 2.0 V
Base-emitter saturation voltage IC = 3.0 A;IB = 0.4 A - - 1.3 V
DC current gain IC = 1.0 A; VCE = 2 V 13 21 30
Gain bands
2
(Acceptance limits) 2 18 - 25
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times resistive load I
t
s
t
f
Turn-off storage time 1.5 2.0 µs
Turn-off fall time 0.5 0.8 µs
1
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
L = 25 mH
IC = 3.0 A; VCE = 2 V 7.5 11 -
1IC = 1.0 A; VCE = 2 V 13 - 20
323 -30
= 3.0 A; I
Con
= 0.3 A; -I
Bon
= 0.6 A
Boff
Switching times inductive load I
t
s
t
f
t
s
t
f
1 Measured with half sine-wave voltage (curve tracer).
2 Gain Banding.
Product is divided into 3 gain bands for matching purposes.
The gain band is printed on the device.
All devices within a device rail will be from the same gain band.
However, a box may contain rails from more than one band.
Band quantities are shown on the box label.
It is not possible to order specific gain bands.
Turn-off storage time 1.0 1.2 µs
Turn-off fall time 60 100 ns
Turn-off storage time 1.1 1.4 µs
Turn-off fall time 120 250 ns
= 3.0 A; I
Con
-V
= 5 V
BB
I
= 3.0 A; I
Con
-V
= 5 V; Tj = 100 ˚C
BB
= 0.3 A; LB = 1 µH;
Bon
= 0.3 A; LB = 1 µH;
Bon
March 1996 2 Rev 1.100
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT211
ICon
90 %
10 %
tf
IBon
30-60 Hz
6V
300R
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
.
CEOsust
+ 50v
90 %
IC
ton
IB
10 %
tr 30ns
-IBoff
ts
toff
Fig.4. Switching times waveforms with resistive load.
IC / mA
250
200
100
0
VCE / V
Fig.2. Oscilloscope display for V
VIM
0
tp
T
R
B
min
VCEOsust
VCC
R
L
T.U.T.
CEO
sust
VCC
LC
IBon
-VBB
.
Fig.5. Test circuit inductive load.
LB
T.U.T.
VCC = 300 V; -VBE = 5 V;LB = 1 uH
ICon
90 %
IC
10 %
ts
toff
IB
IBon
tf
t
t
-IBoff
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
Fig.6. Switching times waveforms with inductive load.
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from I
Con
and I
requirements.
Bon
March 1996 3 Rev 1.100
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