Philips BUT18F, BUT18AF Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BUT18F; BUT18AF

Silicon diffused power transistors

Product specification
Supersedes data of 1997 Aug 13

1999 Jun 11

Philips Semiconductors Product specification

Silicon diffused power transistors BUT18F; BUT18AF

DESCRIPTION

High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.

APPLICATIONS

• Converters

• Inverters

• Switching regulators

• Motor control systems.

QUICK REFERENCE DATA

PINNING

PIN DESCRIPTION

1 base
2 collector
3 emitter

mb mounting base; electrically isolated from all pins

ndbook, halfpage

MBB008

23

1

MBK109

Fig.1 Simplified outline (SOT186) and symbol.

2

1

3

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

CESM

collector-emitter peak voltage VBE=0

BUT18F 850 V
BUT18AF 1000 V

V

CEO

collector-emitter voltage open base

BUT18F 400 V

BUT18AF 450 V
V
I

Csat

I

C

I

CM

P
t

f

CEsat

tot

collector-emitter saturation voltage see Fig.7 1.5 V
collector saturation current 4 A
collector current (DC) see Fig.4 6 A
collector current (peak value) see Fig.4 12 A
total power dissipation Th≤ 25 °C; see Fig.2 33 W
fall time resistive load; see Figs 10 and 11 0.8 µs

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-h

thermal resistance from junction to external heatsink note 1 6.15 K/W

note 2 3.65 K/W

Notes

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

2. Mounted with heatsink compound and 30 ±5 N force on centre of package.

1999 Jun 11 2

Philips Semiconductors Product specification

Silicon diffused power transistors BUT18F; BUT18AF

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CESM

V

CEO

I

Csat

I

C

I

CM

I

B

I

BM

P

tot

T

stg

T

j

collector-emitter peak voltage VBE=0

BUT18F − 850 V

BUT18AF − 1000 V

collector-emitter voltage open base

BUT18F − 400 V

BUT18AF − 450 V

collector saturation current − 4A
collector current (DC) see Fig.4 − 6A
collector current (peak value) see Fig.4 − 12 A
base current (DC) − 3A
base current (peak value) − 6A
total power dissipation Th≤ 25 °C; see Fig.2; note 1 − 20 W

T

≤ 25 °C; see Fig.2; note 2 − 33 W

h

storage temperature −65 +150 °C
junction temperature − 150 °C

Notes

1. Without heatsink compound.

2. With heatsink compound.

ISOLATION CHARACTERISTICS

SYMBOL PARAMETER TYP. MAX. UNIT

V
C

isolM
isol

isolation voltage from all terminals to external heatsink (peak value) − 1500 V
isolation capacitance from collector to external heatsink 12 − pF

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CEOsust

collector-emitter sustaining voltage IC= 100 mA; I

BUT18F 400 −−V

L = 25 mH; see Figs 3 and 6

Boff

=0;

BUT18AF 450 −−V
V

CEsat

V

BEsat

I

CES

collector-emitter saturation voltage IC= 4 A; IB= 800 mA; see Fig.7 −−1.5 V
base-emitter saturation voltage IC= 4 A; IB= 800 mA; see Fig.8 −−1.3 V
collector-emitter cut-off current VCE=V

CESMmax

; VBE=0;

−−1mA

note 1
V

CE=VCESMmax

; VBE=0;

−−2mA

Tj= 125 °C; note 1

I

EBO

emitter-base cut-off current VEB=9V; IC=0 −−10 mA

1999 Jun 11 3

Philips Semiconductors Product specification

Silicon diffused power transistors BUT18F; BUT18AF

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

h

FE

Switching times resistive load (see Figs 10 and 11)
t

on

t

s

t

f

Switching times inductive load (see Figs 10 and 13)
t

s

t

f

Note

1. Measured with a half-sinewave voltage (curve tracer).

DC current gain VCE=5V; IC= 10 mA;

see Fig.9
V

=5V; IC= 1 A; see Fig.9 10 20 35

CE

turn-on time I

storage time I

fall time I

storage time I
fall time I

I

I

I

Con
Bon

Con
Bon

Con
Bon

Con
Con

=4A;
= −I

Boff

=4A;
= −I

Boff

=4A;
= −I

Boff

= 4 A; I
= 4 A; I

= 800 mA

= 800 mA

= 800 mA

= 800 mA − 1.6 2.5 µs

Bon

= 800 mA − 150 400 ns

Bon

10 18 35

−−1µs

−−4µs

−−0.8 µs

120

handbook, halfpage

P

tot max

(%)

80

40

0

050

100 150

T

h

Fig.2 Power derating curve.

o

(

MGK674

C)

andbook, halfpage

30 to 60 Hz

Fig.3 Test circuit for collector-emitter

100 to 200 Ω

L

300 Ω

6 V

sustaining voltage.

+ 50 V

horizontal

oscilloscope

vertical

1 Ω

MGE252

1999 Jun 11 4