Philips BUT18A, BUT18 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BUT18; BUT18A
Silicon diffused power transistors
Product specification
Supersedes data of 1997 Aug 13
1999 Jun 11
Philips Semiconductors Product specification
Silicon diffused power transistors BUT18; BUT18A
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a TO-220AB package.
book, halfpage
APPLICATIONS
• Converters
• Inverters
• Switching regulators
• Motor control systems.
MBB008
2
1
3
PINNING
123
MBK106
PIN DESCRIPTION
1 base
2 collector; connected to
mounting base
Fig.1 Simplified outline (TO-220AB) and symbol.
3 emitter
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
CESM
collector-emitter peak voltage VBE=0
BUT18 850 V
BUT18A 1000 V
V
CEO
collector-emitter voltage open base
BUT18 400 V
BUT18A 450 V
V
I
Csat
I
C
I
CM
P
t
f
CEsat
tot
collector-emitter saturation voltage see Fig.7 1.5 V
collector saturation current 4 A
collector current (DC) see Fig.2 6 A
collector current (peak value) see Fig.2 12 A
total power dissipation Tmb≤ 25 °C; see Fig.4 110 W
fall time resistive load; see Figs 10 and 11 0.8 µs
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-mb
thermal resistance from junction to mounting base 1.15 K/W
1999 Jun 11 2
Philips Semiconductors Product specification
Silicon diffused power transistors BUT18; BUT18A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
Csat
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
collector-emitter peak voltage VBE=0
BUT18 − 850 V
BUT18A − 1000 V
collector-emitter voltage open base
BUT18 − 400 V
BUT18A − 450 V
collector saturation current − 4A
collector current (DC) see Fig.2 − 6A
collector current (peak value) see Fig.2 − 12 A
base current (DC) − 3A
base current (peak value) − 6A
total power dissipation Tmb≤ 25 °C; see Fig.4 − 110 W
storage temperature −65 +150 °C
junction temperature − 150 °C
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CEOsust
collector-emitter sustaining
voltage
IC= 0.1 A; I
Figs 5 and 6
= 0; L = 25 mH; see
Boff
BUT18 400 −−V
BUT18A 450 −−V
V
CEsat
V
BEsat
I
CES
collector-emitter saturation voltage IC= 4 A; IB= 0.8 A; see Fig.7 −−1.5 V
base-emitter saturation voltage IC= 4 A; IB= 0.8 A; see Fig.8 −−1.3 V
collector-emitter cut-off current VCE=V
V
CE=VCESMmax
CESMmax
; VBE= 0; note 1 −−1mA
; VBE=0;
−−2mA
Tj= 125 °C; note 1
I
EBO
h
FE
emitter-base cut-off current VEB=9V; IC=0 −−10 mA
DC current gain VCE=5V; IC= 10 mA; see Fig.9 10 18 35
V
=5V; IC= 1 A; see Fig.9 10 20 35
CE
Switching times resistive load (see Figs 10 and 11)
t
on
t
s
t
f
turn-on time I
storage time I
fall time I
Con
Con
Con
= 4 A; I
= 4 A; I
= 4 A; I
Bon
Bon
Bon
= −I
= −I
= −I
= 800 mA −−1µs
Boff
= 800 mA −−4µs
Boff
= 800 mA −−0.8 µs
Boff
Switching times inductive load (see Figs 10 and 13)
t
s
t
f
storage time I
fall time I
Con
Con
= 4 A; I
= 4 A; I
= 800 mA; VCL= 250 V − 1.6 2.5 µs
Bon
= 800 mA; VCL= 250 V − 150 400 ns
Bon
Note
1. Measured with a half-sinewave voltage (curve tracer).
1999 Jun 11 3
Philips Semiconductors Product specification
Silicon diffused power transistors BUT18; BUT18A
handbook, full pagewidth
10
10
(A)
2
10
I
C
I
CM max
10
I
C max
1
−1
−2
I
II
DC
MGB921
−3
10
−4
10
110
Tmb=25°C.
I -Region of permissible DC operation.
II -Permissible extension for repetitive pulse operation.
10
Fig.2 Forward bias SOAR.
1999 Jun 11 4
BUT18
BUT18A
2
3
10
VCE (V)
4
10
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