Philips but12xi DATASHEETS
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT12XI
GENERAL DESCRIPTION
Improved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope specially
suited for overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,
motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
V
I
C
I
CM
P
V
CESM
CEO
tot
CEsat
Collector-emitter voltage peak value VBE = 0 V - 1000 V
Collector-emitter voltage (open base) - 450 V
Collector current (DC) - 8 A
Collector current peak value - 20 A
Total power dissipation Ths ≤ 25 ˚C - 33 W
Collector-emitter saturation voltage IC = 5.0 A;IB = 0.86 A - 1.5 V
I
t
Csat
f
Collector saturation current 5 - A
Inductive fall time I
= 5.0A;I
Con
= 1.0A,Tj ≤100˚C - 300 ns
Bon
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
case
c
b
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
P
T
T
CESM
CEO
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1000 V
Collector-emitter voltage (open base) - 450 V
Collector current (DC) - 8 A
Collector current peak value - 20 A
Base current (DC) - 4 A
Base current peak value - 6 A
Total power dissipation Ths ≤ 25 ˚C - 33 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
123
e
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-a
June 1997 1 Rev 1.000
Junction to heatsink with heatsink compound - 3.65 K/W
Junction to ambient in free air 55 - K/W
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT12XI
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
h
FEsat
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
Collector cut-off current
1
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 3.0 mA
CESMmax
- - 1.0 mA
Emitter cut-off current VEB = 9 V; IC = 0 A - - 10 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 450 - - V
L = 25 mH
Collector-emitter saturation voltages IC = 5 A; IB = 0.86 A - - 1.5 V
Base-emitter saturation voltage IC = 5 A; IB = 0.86 A - - 1.3 V
DC current gain IC = 10 mA; VCE = 5 V 10 18 35
IC = 1 A; VCE = 5 V 14 20 35
IC = 5 A; VCE = 1.5 V 5.8 10 12.5
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
t
on
t
s
t
f
Turn-on time - 1.0 µs
Turn-off storage time - 4.0 µs
Turn-off fall time - 0.8 µs
Switching times (inductive load) I
Switching times (resistive load) I
t
s
t
f
Turn-off storage time 1.9 2.5 µs
Turn-off fall time 150 300 ns
= 5.0 A; I
Con
= 5.0 A; I
Con
-VBB = 5 V; Tj = 100 ˚C
= -I
Bon
Boff
= 1.0 A; LB = 1 µH;
Bon
= 1.0 A
1 Measured with half sine-wave voltage (curve tracer).
June 1997 2 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT12XI
ICon
90 %
10 %
tf
IBon
30-60 Hz
6V
300R
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
.
CEOsust
+ 50v
90 %
IC
ton
IB
10 %
tr 30ns
-IBoff
ts
toff
Fig.4. Switching times waveforms with resistive load.
IC / mA
250
200
100
0
VCE / V
Fig.2. Oscilloscope display for V
VIM
0
tp
T
R
B
min
VCEOsust
VCC
R
L
T.U.T.
CEO
sust
VCC
LC
IBon
-VBB
.
Fig.5. Test circuit inductive load.
LB
T.U.T.
VCC = 300 V; -VBE = 5 V;LB = 1 uH
ICon
90 %
IC
10 %
ts
toff
IB
IBon
tf
t
t
-IBoff
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
Fig.6. Switching times waveforms with inductive load.
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from I
Con
and I
requirements.
Bon
June 1997 3 Rev 1.000
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