Philips BUT12F, BUT12AF Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BUT12F; BUT12AF
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 13
Philips Semiconductors Product specification
Silicon diffused power transistors BUT12F; BUT12AF
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 plastic
package.
APPLICATIONS
• Converters
• Inverters
• Switching regulators
• Motor control systems.
QUICK REFERENCE DATA
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
mb mounting base; electrically isolated from all pins
handbook, halfpage
handbook, halfpage
23
1
MBK109
Fig.1 Simplified outline (SOT186) and symbol.
1
MBB008
2
3
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
CESM
collector-emitter peak voltage VBE=0
BUT12F 850 V
BUT12AF 1000 V
V
CEO
collector-emitter voltage open base
BUT12F 400 V
BUT12AF 450 V
V
I
Csat
CEsat
collector-emitter saturation voltage see Figs 7 and 9 1.5 V
collector saturation current
BUT12F 6 A
BUT12AF 5 A
I
I
P
t
C
CM
tot
f
collector current (DC) see Figs 2 and 4 8 A
collector current (peak value) see Fig.2 20 A
total power dissipation Th≤ 25 °C; see Fig.3 23 W
fall time resistive load; see Figs 11 and 12 0.8 µs
1997 Aug 13 1
Philips Semiconductors Product specification
Silicon diffused power transistors BUT12F; BUT12AF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-h
R
th j-a
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
Csat
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
thermal resistance from junction to external heatsink note 1 5.5 K/W
note 2 3.9 K/W
thermal resistance from junction to ambient 55 K/W
collector-emitter peak voltage VBE=0
BUT12F − 850 V
BUT12AF − 1000 V
collector-emitter voltage open base
BUT12F − 400 V
BUT12AF − 450 V
collector saturation current
BUT12F − 6A
BUT12AF − 5A
collector current (DC) see Figs 2 and 4 − 8A
collector current (peak value) see Fig.2 − 20 A
base current (DC) − 4A
base current (peak value) − 6A
total power dissipation Th≤ 25 °C; see Fig.3; note 1 − 23 W
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
ISOLATION CHARACTERISTICS
SYMBOL PARAMETER TYP. MAX. UNIT
V
C
isolM
isol
isolation voltage from all terminals to external heatsink (peak value) − 1500 V
isolation capacitance from collector to external heatsink − 12 pF
1997 Aug 13 2
Philips Semiconductors Product specification
Silicon diffused power transistors BUT12F; BUT12AF
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CEOsust
collector-emitter sustaining voltage IC= 100 mA; I
BUT12F 400 −−V
BUT12AF 450 −−V
V
CEsat
collector-emitter saturation voltage
BUT12F I
BUT12AF I
V
BEsat
base-emitter saturation voltage
BUT12F I
BUT12AF I
I
CES
I
EBO
h
FE
collector-emitter cut-off current VCE=V
emitter-base cut-off current VEB=9V; IC=0 −−10 mA
DC current gain VCE=5V; IC= 10 mA; see Fig.10 10 18 35
Switching times resistive load (see Fig.12)
t
on
turn-on time
BUT12F I
BUT12AF I
t
s
storage time
BUT12F I
BUT12AF I
t
f
fall time
BUT12F I
BUT12AF I
Switching times inductive load (see Fig.14)
t
s
storage time
BUT12F I
BUT12AF I
t
f
fall time
BUT12F I
BUT12AF I
see Figs 5 and 6
= 6 A; IB= 1.2 A; see
C
Figs 7 and 9
= 5 A; IB= 1 A; see
C
Figs 7 and 9
= 6 A; IB= 1.2 A; see Fig.7 −−1.5 V
C
= 5 A; IB= 1 A; see Fig.7 −−1.5 V
C
CESMmax
V
CE=VCESMmax
Tj= 125 °C; note 1
=5V; IC= 1 A; see Fig.10 10 20 35
V
CE
= 6 A; I
Con
= 5 A; I
Con
= 6 A; I
Con
= 5 A; I
Con
= 6 A; I
Con
= 5 A; I
Con
= 6 A; I
Con
VCL= 250 V; Tc= 100 °C
= 5 A; I
Con
VCL= 300 V; Tc= 100 °C
= 6 A; I
Con
VCL= 250 V; Tc= 100 °C
= 5 A; I
Con
VCL= 300 V; Tc= 100 °C
= 0; L = 25 mH;
Boff
−−1.5 V
−−1.5 V
; VBE= 0; note 1 −−1mA
Bon
Bon
Bon
Bon
Bon
Bon
Bon
Bon
Bon
Bon
; VBE=0;
= −I
= −I
= −I
= −I
= −I
= −I
= 1.2 A −−1µs
Boff
=1A −−1µs
Boff
= 1.2 A −−4µs
Boff
=1A −−4µs
Boff
= 1.2 A −−0.8 µs
Boff
=1A −−0.8 µs
Boff
= 1.2 A;
=1A;
= 1.2 A;
=1A;
−−3mA
− 1.9 2.5 µs
− 1.9 2.5 µs
− 200 300 ns
− 200 300 ns
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13 3
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