Philips BUT12AI Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT12AI
GENERAL DESCRIPTION
Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited
for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,
motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1000 V
Collector-emitter voltage (open base) - 450 V
Collector current (DC) - 8 A
Collector current peak value - 20 A
Total power dissipation Ths ≤ 25 ˚C - 110 W
Collector-emitter saturation voltage IC = 5 A; IB = 0.86A - 1.5 V
Collector saturation current 5 - A
Inductive fall time I
= 5 A; I
Con
= 1.0 A;Tj ≤ 100˚C 300 ns
Bon
PIN DESCRIPTION
tab
c
1 base
2 collector
b
3 emitter
tab collector
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
P
T
T
CESM
CEO
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1000 V
Collector-emitter voltage (open base) - 450 V
Collector current (DC) - 8 A
Collector current peak value - 20 A
Base current (DC) - 4 A
Base current peak value - 6 A
Total power dissipation Ths ≤ 25 ˚C - 110 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-hs
th j-a
Junction to heatsink with heatsink compound - 1.15 K/W
Junction to ambient in free air - 60 K/W
e
June 1997 1 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT12AI
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
h
FEsat
Collector cut-off current
Emitter cut-off current VEB = 9 V; IC = 0 A - - 10 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 450 - - V
Collector-emitter saturation voltages IC = 5 A; IB = 0.86 A - - 1.5 V
Base-emitter saturation voltage IC = 5 A; IB = 0.86 A - - 1.3 V
DC current gain IC = 10mA; VCE = 5 V 10 18 35
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load) I
t
on
t
s
t
f
t
s
t
f
Turn-on time - 1.0 µs
Turn-off storage time - 4.0 µs
Turn-off fall time - 0.8 µs
Switching times (inductive load) I
Turn-off storage time 1.9 2.5 µs
Turn-off fall time 150 300 ns
1
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 3.0 mA
CESMmax
- - 1.0 mA
L = 25 mH
IC = 1.0A; VCE = 5 V 14 20 35
IC = 5.0A; VCE = 1.5 V 5.8 10 12.5
=5 A; I
Con
= 5 A; I
Con
-VBB = 5 V; Tj = 100 ˚C
= -I
Bon
Bon
= 1.0 A
Boff
= 1.0 A; LB = 1 µH;
100-200R
Horizontal
Oscilloscope
Vertical
300R
30-60 Hz
6V
Fig.1. Test circuit for V
1 Measured with half sine-wave voltage (curve tracer).
1R
CEOsust
+ 50v
IC / mA
250
200
100
0
VCE / V
min
VCEOsust
. Fig.2. Oscilloscope display for V
CEO
sust
.
June 1997 2 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT12AI
VCC
R
L
VIM
0
R
B
T.U.T.
tp
T
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from I
90 %
IC
ton
IB
10 %
tr 30ns
Con
and I
ts
toff
requirements.
Bon
ICon
90 %
10 %
tf
IBon
ICon
90 %
IC
10 %
ts
toff
IB
IBon
tf
-IBoff
t
t
Fig.6. Switching times waveforms with inductive load.
VCC
LC
IBend
-VBB
LB
T.U.T.
VCL
CFB
-IBoff
Fig.4. Switching times waveforms with resistive load.
Fig.7. Test circuit RBSOA. VCC = 150 V; -VBB = 5 V
LC = 200 µH; VCL ≤ 850 V; LB = 1 µH
Normalised Power Derating
Tmb / C
= f (Tmb)
25˚C
IBon
-VBB
LB
Fig.5. Test circuit inductive load.
VCC = 300 V; -VBE = 5 V;LB = 1 uH
LC
VCC
T.U.T.
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Fig.8. Normalised power dissipation.
PD% = 100⋅PD/PD
June 1997 3 Rev 1.000
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