Philips BUT12A, BUT12 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BUT12; BUT12A
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 13
Philips Semiconductors Product specification
Silicon diffused power transistors BUT12; BUT12A
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a TO-220AB package.
ndbook, halfpage
APPLICATIONS
• Converters
handbook, halfpage
1
2
• Inverters
• Switching regulators
MBB008
3
• Motor control systems.
123
MBK106
PINNING
PIN DESCRIPTION
1 base
2 collector; connected to
mounting base
3 emitter
Fig.1 Simplified outline (TO-220AB) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
CESM
collector-emitter peak voltage VBE=0
BUT12 850 V
BUT12A 1000 V
V
CEO
collector-emitter voltage open base
BUT12 400 V
BUT12A 450 V
V
I
Csat
CEsat
collector-emitter saturation voltage see Fig.8 1.5 V
collector saturation current
BUT12 6 A
BUT12A 5 A
I
I
P
t
C
CM
tot
f
collector current (DC) see Figs 3 and 4 8 A
collector current (peak value) see Fig. 4 20 A
total power dissipation Tmb≤ 25 °C; see Fig.2 125 W
fall time resistive load;
0.8 µs
see Figs 12 and 13
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-mb
thermal resistance from junction to mounting base 1 K/W
1997 Aug 13 1
Philips Semiconductors Product specification
Silicon diffused power transistors BUT12; BUT12A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
Csat
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
collector-emitter peak voltage VBE=0
BUT12 − 850 V
BUT12A − 1000 V
collector-emitter voltage open base
BUT12 − 400 V
BUT12A − 450 V
collector saturation current
BUT12 − 6A
BUT12A − 5A
collector current (DC) see Figs 3 and 4 − 8A
collector current (peak value) see Fig. 4 − 20 A
base current (DC) − 4A
base current (peak value) − 6A
total power dissipation Tmb≤ 25 °C; see Fig.2 − 125 W
storage temperature −65 +150 °C
junction temperature − 150 °C
120
handbook, halfpage
P
tot max
(%)
80
40
0
050
100 150
T
mb
Fig.2 Power derating curve.
MGD283
o
(
C)
10
handbook, halfpage
I
C
(A)
5
0
0 400
VBE= −1to−5 V; Tc= 100°C.
Fig.3 Reverse bias SOAR.
800
BUT12F
BUT12AF
VCE (V)
MGB892
1200
1997 Aug 13 2
Philips Semiconductors Product specification
Silicon diffused power transistors BUT12; BUT12A
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CEOsust
collector-emitter sustaining voltage IC= 100 mA; I
BUT12 400 −−V
Figs 6 and 7
BUT12A 450 −−V
V
CEsat
V
BEsat
I
CES
collector-emitter saturation voltage
BUT12 I
BUT12A I
= 6 A; IB= 1.2 A; see Figs 8 and 10 −−1.5 V
C
= 5 A; IB= 1 A; see Figs 8 and 10 −−1.5 V
C
base-emitter saturation voltage
BUT12 I
BUT12A I
= 6 A; IB= 1.2 A; see Fig.8 −−1.5 V
C
= 5 A; IB= 1 A; see Fig.8 −−1.5 V
C
collector-emitter cut-off current VCE=V
V
CE=VCESmax
note 1
I
EBO
h
FE
emitter-base cut-off current VEB=9V; IC=0 −−10 mA
DC current gain VCE=5V; IC= 10 mA; see Fig.11 10 18 35
=5V; IC= 1 A; see Fig.11 10 20 35
V
CE
Switching times resistive load (see Figs 12 and 13)
t
on
t
s
t
f
turn-on time
BUT12 I
BUT12A I
storage time
BUT12 I
BUT12A I
fall time
BUT12 I
BUT12A I
Con
Con
Con
Con
Con
Con
= 6 A; I
= 5 A; I
= 6 A; I
= 5 A; I
= 6 A; I
= 5 A; I
Switching times inductive load (see Figs 14 and 15)
t
s
storage time
BUT12 I
Con
= 6 A; I
Tc= 100 °C
BUT12A I
Con
= 5 A; I
Tc= 100 °C
t
f
fall time
BUT12 I
Con
= 6 A; I
Tc= 100 °C
BUT12A I
Con
= 5 A; I
Tc= 100 °C
CESmax
= 0; L = 25 mH; see
Boff
; VBE= 0; note 1 −−1mA
; VBE= 0; Tj= 125 °C;
= −I
Bon
= −I
Bon
= −I
Bon
= −I
Bon
= −I
Bon
= −I
Bon
= 1.2 A; VCL= 250 V;
Bon
= 1 A; VCL= 300 V;
Bon
= 1.2 A; VCL= 250 V;
Bon
= 1 A; VCL= 300 V;
Bon
= 1.2 A −−1µs
Boff
=1A −−1µs
Boff
= 1.2 A −−4µs
Boff
=1A −−4µs
Boff
= 1.2 A −−0.8 µs
Boff
=1A −−0.8 µs
Boff
−−3mA
− 1.9 2.5 µs
− 1.9 2.5 µs
− 200 300 ns
− 200 300 ns
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13 3
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