Philips BUT11F Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11F
GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated
mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
[INCLUDE]
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 850 V
Collector-emitter voltage (open base) - 400 V
Collector current (DC) - 5 A
Collector current peak value - 10 A
Total power dissipation Ths ≤ 25 ˚C - 20 W
Collector-emitter saturation voltage - 1.5 V
Collector saturation current - 3 A
Fall time - 800 ns
Collector-emitter voltage peak value VBE = 0 V - 850 V
Collector-emitter voltage (open base) - 450 V
Collector current (DC) - 5 A
Collector current peak value - 10 A
Base current (DC) - 2 A
Base current peak value - 4 A
Total power dissipation Ths ≤ 25 ˚C - 20 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-hs
th j-a
Junction to heatsink with heatsink compound - 3.95 K/W
Junction to ambient in free air 55 - K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
August 1997 1 Rev 1.000
Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 12 - pF
heatsink
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11F
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
Collector cut-off current
Emitter cut-off current VEB = 9 V; IC = 0 A - - 10 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 450 - - V
Collector-emitter saturation voltages IC = 3.0 A; IB = 0.6 A - - 1.5 V
Base-emitter saturation voltage IC = 3.0 A; IB = 0.6 A - - 1.3 V
DC current gain IC = 5 mA; VCE = 5 V 10 18 35
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
t
on
t
s
t
f
t
s
t
f
t
s
t
f
Switching times (resistive load) I
Turn-on time - 1 µs
Turn-off storage time - 4 µs
Turn-off fall time - 0.8 µs
Switching times (inductive load) I
Turn-off storage time 1.1 1.4 µs
Turn-off fall time 80 150 ns
Switching times (inductive load) I
Turn-off storage time 1.2 1.5 µs
Turn-off fall time 140 300 ns
1
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
L = 25 mH
IC = 500 mA; VCE = 5 V 10 20 35
= 2.5 A; I
Con
= 2.5 A; I
Con
-VBB = 5 V
= 2.5 A; I
Con
-VBB = 5 V; Tj = 100 ˚C
= -I
Bon
Bon
Bon
= 0.5 A
Boff
= 0.5 A; LB = 1 µH;
= 0.5 A; LB = 1 µH;
IC / mA
250
200
100
0
VCE / V
min
VCEOsust
CEOsust
.
100-200R
Horizontal
Oscilloscope
Vertical
300R
30-60 Hz
6V
Fig.1. Test circuit for V
1 Measured with half sine-wave voltage (curve tracer).
1R
CEOsust
+ 50v
. Fig.2. Oscilloscope display for V
August 1997 2 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11F
VIM
0
R
B
tp
T
Fig
.3.
Test circuit resistive load. VIM = -6 to +8 V
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from I
90 %
IC
ton
IB
10 %
tr 30ns
-IBoff
Fig.
4.
Switching times waveforms with resistive load.
Con
and I
ts
toff
VCC
R
L
T.U.T.
requirements.
Bon
ICon
90 %
10 %
tf
IBon
ICon
90 %
IC
10 %
ts
toff
IB
Fig.
6.
Switching times waveforms with inductive load.
%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Fig.
7.
Normalised power derating and second
IBon
P
tot
Ths / C
tf
-IBoff
Normalised Derating
with heatsink compound
breakdown curves.
t
t
IC / A BUT11AX
6
5
4
3
2
1
0
0 400 800 1200
VCE / V
Fig.8. Reverse bias safe operating area. Tj ≤ T
j max
IBon
-VBB
LB
Fig.
5.
Test circuit inductive load.
VCC
LC
T.U.T.
VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH
August 1997 3 Rev 1.000
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