Philips BUT11APX Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11APX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PINNING - SOT186A PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1000 V
Collector-Base voltage (open emitter) - 1000 V
Collector-emitter voltage (open base) - 450 V
Collector current (DC) - 5 A
Collector current peak value - 10 A
Total power dissipation Ths ≤ 25 ˚C - 32 W
Collector-emitter saturation voltage - 1.5 V
Collector saturation current 3.5 - A
Fall time I
=2.5A,IB1=0.5A,IB2=0.8A 145 160 ns
Csat
PIN DESCRIPTION
case
c
1 base
2 collector
b
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
C
I
CM
I
B
I
BM
P
T
T
CESM
CEO
CBO
tot
stg
j
Collector to emitter voltage VBE = 0 V - 1000 V
Collector to emitter voltage (open base) - 450 V
Collector to base voltage (open emitter) - 1000 V
Collector current (DC) - 5 A
Collector current peak value - 10 A
Base current (DC) - 2 A
Base current peak value - 4 A
Total power dissipation Ths ≤ 25 ˚C - 32 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
123
e
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-hs
th j-a
Junction to heatsink with heatsink compound - 3.95 K/W
Junction to ambient in free air 55 - K/W
September 1998 1 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11APX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
h
FEsat
h
FEsat
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
Collector cut-off current
1
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter cut-off current VEB = 9 V; IC = 0 A - - 10 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 450 - - V
L = 25 mH
Collector-emitter saturation voltages IC = 3.0 A; IB = 0.6 A - 0.25 1.5 V
Base-emitter saturation voltage IC = 2.5 A; IB = 0.33 A - - 1.3 V
DC current gain IC = 5 mA; VCE = 5 V 10 22 35
IC = 500 mA; VCE = 5 V 14 25 35
IC = 2.5 A; VCE = 5 V 10 13.5 17
IC = 3.5 A; VCE = 5 V 8 10 12
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load) I
t
on
t
s
t
f
Turn-on time 0.5 0.7 µs
Turn-off storage time 3.3 4 µs
Turn-off fall time 0.33 0.45 µs
Switching times (inductive load) I
t
s
t
f
Turn-off storage time 1.4 1.6 µs
Turn-off fall time 145 160 ns
Switching times (inductive load) I
t
s
t
f
1 Measured with half sine-wave voltage (curve tracer).
Turn-off storage time 1.7 1.9 µs
Turn-off fall time 160 200 ns
= 2.5 A; IB1 = -IB2 = 0.5 A;
Csat
RL = 75 ohms; V
= 2.5 A; IB1 = 0.5 A; LB = 1 µH;
Csat
-VBB = 5 V
= 2.5 A; IB1 = 0.5 A; LB = 1 µH;
Csat
-VBB = 5 V; Tj = 100 ˚C
BB2
= 4 V;
September 1998 2 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11APX
ICsat
90 %
10 %
tf
IB1
30-60 Hz
6V
300R
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
.
CEOsust
+ 50v
Fig.
90 %
IC
ton
IB
10 %
tr 30ns
-IB2
4.
Switching times waveforms with resistive load.
ts
toff
IC / mA
250
200
100
0
VCE / V
Fig.2. Oscilloscope display for V
VIM
0
tp
T
R
B
min
VCEOsust
VCC
R
L
T.U.T.
CEOsust
VCC
LC
IB1
-VBB
.
Fig.
5.
LB
T.U.T.
Test circuit inductive load.
VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH
ICsat
90 %
IC
10 %
ts
toff
IB
IB1
tf
t
t
-IB2
Fig
.3.
Test circuit resistive load. VIM = -6 to +8 V
Fig.
6.
Switching times waveforms with inductive load.
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from I
Con
and I
requirements.
Bon
September 1998 3 Rev 1.000
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