Philips BUT11AI Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11AI
GENERAL DESCRIPTION
Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high
frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control
systems etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1000 V
Collector-emitter voltage (open base) - 450 V
Collector current (DC) - 5 A
Collector current peak value - 10 A
Total power dissipation Tmb ≤ 25 ˚C - 100 W
Collector-emitter saturation voltage IC = 2.5 A; IB = 0.33 A - 1.5 V
Collector Saturation current 2.5 A
Inductive fall time I
= 2.5 A; I
Con
= 0.5 A 0.08 0.15 µs
Bon
PIN DESCRIPTION
tab
c
1 base
2 collector
b
3 emitter
tab collector
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
P
T
T
CESM
CEO
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1000 V
Collector-emitter voltage (open base) - 450 V
Collector current (DC) - 5 A
Collector current peak value - 10 A
Base current (DC) - 2 A
Base current peak value - 4 A
Total power dissipation Tmb ≤ 25 ˚C - 100 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-mb
th j-a
Junction to mounting base - 1.25 K/W
Junction to ambient in free air - 60 K/W
e
August 1997 1 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11AI
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
h
FEsat
Collector cut-off current
Emitter cut-off current VEB = 9.0 V; IC = 0 A - - 10.0 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 450 - - V
Collector-emitter saturation voltage IC = 2.5 A;IB = 0.33 A - - 1.5 V
Base-emitter saturation voltage IC = 2.5 A;IB = 0.33 A - - 1.3 V
DC current gain IC = 5 mA; VCE = 5 V 10 20 35
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times resistive load I
Turn-on time 0.6 1.0 µs
t
on
t
s
t
f
Turn-off storage time - 4.0 µs
Turn-off fall time - 0.8 µs
1
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
L = 25 mH
IC = 0.5 A; VCE = 5 V 14 22 35
IC = 2.5 A; VCE = 5 V 9 13 17
= 2.5 A; I
Con
= 0.5 A; -I
Bon
= 0.5 A
Boff
3.4
0.6
t
s
t
f
t
s
t
f
[INCLUDE]
Switching times inductive load I
Turn-off storage time 1.1 1.4 µs
= 2.5 A; I
Con
-V
= 5 V
BB
= 0.5 A; LB = 1 µH;
Bon
Turn-off fall time 80 150 ns
I
= 2.5 A; I
Con
-V
= 5 V; Tj = 100 ˚C
Turn-off storage time 1.2 1.5 µs
BB
= 0.5 A; LB = 1 µH;
Bon
Turn-off fall time 140 300 ns
1 Measured with half sine-wave voltage (curve tracer).
August 1997 2 Rev 1.000
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