Philips BUT11A, BUT11 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BUT11; BUT11A
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 13
Philips Semiconductors Product specification
Silicon diffused power transistors BUT11; BUT11A
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a TO-220AB package.
APPLICATIONS
ndbook, halfpage
handbook, halfpage
2
• Converters
• Inverters
1
• Switching regulators
• Motor control systems.
PINNING
123
MBB008
MBK106
3
PIN DESCRIPTION
1 base
2 collector; connected to
mounting base
Fig.1 Simplified outline (TO-220AB) and symbol.
3 emitter
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
CESM
collector-emitter peak voltage VBE=0
BUT11 850 V
BUT11A 1000 V
V
CEO
collector-emitter voltage open base
BUT11 400 V
BUT11A 450 V
V
I
I
P
t
C
CM
f
CEsat
tot
collector-emitter saturation voltage see Figs 7 and 9 1.5 V
collector current (DC) see Figs 2 and 4 5 A
collector current (peak value) see Fig. 4 10 A
total power dissipation Tmb≤ 25 °C; see Fig.3 100 W
fall time resistive load; see Figs 11 and 12 0.8 µs
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-mb
thermal resistance from junction to mounting base 1.25 K/W
1997 Aug 13 1
Philips Semiconductors Product specification
Silicon diffused power transistors BUT11; BUT11A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
collector-emitter peak voltage VBE=0
BUT11 − 850 V
BUT11A − 1000 V
collector-emitter voltage open base
BUT11 − 400 V
BUT11A − 450 V
collector current (DC) see Figs 2 and 4 − 5A
collector current (peak value) tp< 2 ms; see Fig. 4 − 10 A
base current (DC) − 2A
base current (peak value) tp<2ms − 4A
total power dissipation Tmb≤ 25 °C; see Fig.3 − 100 W
storage temperature −65 +150 °C
junction temperature − 150 °C
handbook, halfpage
5
I
C
(A)
4
3
2
1
0
0 400
(1) BUT11.
(2) BUT11A.
(1)
800
VCE (V)
Fig.2 Reverse bias SOAR.
MGB895
(2)
1200
120
handbook, halfpage
P
tot max
(%)
80
40
0
050
100 150
T
mb
Fig.3 Power derating curve.
MGD283
o
(
C)
1997 Aug 13 2
Philips Semiconductors Product specification
Silicon diffused power transistors BUT11; BUT11A
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CEOsust
collector-emitter sustaining voltage IC= 100 mA; I
BUT11 400 −−V
BUT11A 450 −−V
V
CEsat
collector-emitter saturation voltage
BUT11 I
BUT11A I
V
BEsat
base-emitter saturation voltage
BUT11 I
BUT11A I
I
CES
I
EBO
h
FE
collector-emitter cut-off current VCE=V
emitter-base cut-off current VEB=9V; IC=0 −−10 mA
DC current gain VCE=5V; IC= 5 mA; see Fig.10 10 18 35
Switching times resistive load (see Fig.12)
t
on
turn-on time
BUT11 I
BUT11A I
t
s
storage time
BUT11 I
BUT11A I
t
f
fall time
BUT11 I
BUT11A I
Switching times inductive load (see Fig.14)
t
s
storage time
BUT11 I
BUT11A I
t
f
fall time
BUT11 I
BUT11A I
Figs 5 and 6
= 3 A; IB= 600 mA; see Figs 7 and 9 −−1.5 V
C
= 2.5 A; IB= 500 mA; see
C
Figs 7 and 9
= 3 A; IB= 0.6 A; see Fig.7 −−1.3 V
C
= 2.5 A; IB= 0.5 A; see Fig.7 −−1.3 V
C
CESMmax
V
CE=VCESMmax
note 1
V
=5V; IC= 500 mA; see Fig.10 10 20 35
CE
= 3 A; I
Con
= 2.5 A; I
Con
= 3 A; I
Con
= 2.5 A; I
Con
= 3 A; I
Con
= 2.5 A; I
Con
= 3 A; I
Con
= 3 A; I
I
Con
= 2.5 A; I
Con
I
= 2.5 A; I
Con
= 3 A; I
Con
= 3 A; I
I
Con
= 2.5 A; I
Con
= 2.5 A; I
I
Con
= 0; L = 25 mH; see
Boff
−−1.5 V
; VBE= 0; note 1 −−1mA
; VBE= 0; Tj= 125 °C;
= −I
Bon
Bon
= −I
Bon
Bon
= −I
Bon
Bon
= 600 mA − 1.1 1.4 µs
Bon
= 600 mA; Tj= 100 °C − 1.2 1.5 µs
Bon
Bon
Bon
= 600 mA − 80 150 ns
Bon
= 600 mA; Tj= 100 °C − 140 300 ns
Bon
Bon
Bon
= 600 mA −−1µs
Boff
= −I
= −I
= −I
= 500 mA −−1µs
Boff
= 600 mA −−4µs
Boff
= 500 mA −−4µs
Boff
= 600 mA −−0.8 µs
Boff
= 500 mA −−0.8 µs
Boff
= 500 mA − 1.1 1.4 µs
= 500 mA; Tj= 100 °C − 1.2 1.5 µs
= 500 mA − 80 150 ns
= 500 mA; Tj= 100 °C − 140 300 ns
−−2mA
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13 3
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