Philips buk9907-40atc Datasheet

M3D745

1. Description

2. Features

BUK9907-40ATC

TrenchPLUS logic level FET

Rev. 01 — 28 January 2002 Product data

N-channel enhancement mode ﬁeld-effect powertransistorina plastic package using TrenchMOS™ technology, featuring very low on-state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing.

Product availability:

BUK9907-40ATC in SOT263B.

■ Typical on-state resistance 5.8 mΩ

■ Q101 compliant

■ ESD and overvoltage protection

■ Monolithically integrated temperature sensor for overload protection.

3. Applications

■ Automotive and power switching:

◆ 12 V and 24 V high power motor drives (e.g. Electrical Power Assisted

Steering (EPAS))

◆ Protected drive for lamps.

4. Pinning information

Table 1: Pinning - SOT263B simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g) 2 anode (a) 3 drain (d) 4 cathode (k) 5 source (s) mb mounting base;

connected to drain (d)

mb

15

SOT263B

MBL263

g

MBL306

da

sk

Philips Semiconductors

BUK9907-40ATC

TrenchPLUS logic level FET

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V

DSR(CL)

I

D

P

tot

T

j

R

DSon

V

F

S

F

drain-source clamping voltage Tj=25°C; I drain current (DC) Tmb=25°C; VGS= 5 V - 140 A total power dissipation Tmb=25°C - 272 W junction temperature - 175 °C drain-source on-state resistance Tj=25°C; VGS=5V; ID=50A 5.8 7 mΩ

=25°C; VGS= 4.5 V; ID=50A 6 7.7 mΩ

T

j

=25°C; VGS= 10 V; ID= 50 A 5.2 6.2 mΩ

T

j

temperature sense diode forward

Tj=25°C; IF= 250 µA 658 668 mV

voltage temperature sense diode temperature

−55 °C<Tj< 175 °C; IF= 250 µA −1.54 −1.68 mV/K

coefﬁcient

= −2 mA; ID=1A 50 - V

GS(CL)

9397 750 09139

Product data Rev. 01 — 28 January 2002 2 of 15

Philips Semiconductors

BUK9907-40ATC

TrenchPLUS logic level FET

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGS

V

GS

I

D

I

DM

P

tot

I

DG(CL)

I

GS(CL)

V

isol(FET-TSD)

drain-source voltage (DC) drain-gate voltage (DC) IDG= 250 µA gate-source voltage (DC) drain current (DC) Tmb=25°C; VGS=5V;

drain current (peak value) Tmb=25°C; pulsed; tp≤ 10 µs;

total power dissipation Tmb=25°C; Figure 1 - 272 W drain-gate clamping current tp= 5 ms; δ = 0.01 - 50 mA gate-source clamping current continuous - 10 mA

FET to temperature sense diode isolation voltage

T

stg

T

j

storage temperature −55 +175 °C operating junction temperature −55 +175 °C

Source-drain diode

I

DR

I

DRM

reverse drain current (DC) Tmb=25°C

pulsed reverse drain current Tmb=25°C; pulsed; tp≤ 10 µs - 560 A

Clamping

E

DS(CL)S

non-repetitive drain-source clamping energy

Electrostatic Discharge

V

esd

electrostatic discharge voltage; pins 1,3,5

Figure 2 and 3

= 100 °C; VGS=5V;Figure 2

T

mb

Figure 3

= 5 ms; δ = 0.01 - 50 mA

t

p

unclamped inductive load; ID=75A;

≤ 40 V; VGS=5V; RGS=10kΩ;

V

DS

starting T

=25°C

j

Human Body Model; C = 100 pF; R = 1.5 kΩ

[1]

-40V

[1]

-40V

[1]

- ±15 V

[2]

- 140 A

[3]

-75A

[3]

-75A

- 560 A

- ±100 V

[2]

- 140 A

[3]

-75A

- 1.4 J

-6kV

[1] Voltage is limited by clamping [2] Current is limited by power dissipation chip rating [3] Continuous current is limited by package.

9397 750 09139

Product data Rev. 01 — 28 January 2002 3 of 15

Philips Semiconductors

BUK9907-40ATC

TrenchPLUS logic level FET

120

P

der

(%)

100

80

60

40

20

0

0 25 50 75 100 125 150 175 200

P

tot

P

der

-----------------------

P

tot 25 C°()

100%×=

03na19

T

mb (ºC)

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

3

10

150

I

D

(A)

125

100

75

Capped at 75 A due to package

50

25

0

25 50 75 100 125 150 175 200

03ne74

T

mb

(oC)

VGS≥ 5V

Fig 2. Continuous drain current as a function of

mounting base temperature.

03ne75

I

D

(A)

10

1

R

= VDS/I

DSon

2

Capped at 75 A due to package

1 10 10

D

DC

tp = 10 µs

100 µs

1 ms

10 ms

100 ms

V

DS

(V)

Tmb=25°C; IDM single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

2

9397 750 09139

Product data Rev. 01 — 28 January 2002 4 of 15

Philips Semiconductors

BUK9907-40ATC

TrenchPLUS logic level FET

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

R

th(j-mb)

thermal resistance from junction to ambient vertical in still air - - 60 K/W thermal resistance from junction to mounting

Figure 4 - - 0.55 K/W

base

7.1 Transient thermal impedance

03ne76

t

p

δ =

T

t

T

t

(s)

p

Z

th(j-mb)

1

(K/W)

10

δ

= 0.5

0.2

-1

0.1

0.05

10

P

t

p

-1

1 10

0.02

-2

Single Shot

-3 10

-6

10

-5

10

-4

10

-3

10

-2

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

9397 750 09139

Product data Rev. 01 — 28 January 2002 5 of 15

Philips Semiconductors

BUK9907-40ATC

TrenchPLUS logic level FET

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise speciﬁed

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DG

drain-gate zener breakdown voltage

V

GS(th)

I

DSS

V

(BR)GSS

gate-source threshold voltage ID= 1 mA; VDS=VGS;

drain-source leakage current VDS= 40 V; VGS=0V

gate-source breakdown voltage

I

GSS

R

DSon

gate-source leakage current VGS= ±5 V; VDS= 0 V - 5 1000 nA drain-source on-state

resistance

V

F

temperature sense diode forward voltage

S

F

temperature sense diode temperature coefﬁcient

V

hys

temperature sense diode forward voltage hysteresis

Dynamic characteristics

C C C t

d(on)

t

r

t

d(off)

t

f

L

d

L

s

iss oss rss

input capacitance VGS=0V; VDS=25V; output capacitance - 958 - pF reverse transfer capacitance - 595 - pF turn-on delay time VDD= 30 V; RL= 1.2 Ω; rise time - 10 - µs turn-off delay time - 17 - µs fall time - 11 - µs internal drain inductance measured from upper edge

internal source inductance measured from source lead

ID= 0.25 mA; VGS=0V

40 - - V

= −55 °C40--V

T

j

Figure 9

1 1.5 2 V

= 175 °C 0.5 - - V

T

j

= −55 °C − - 2.3 V

T

j

- 0.1 100 µA

= 175 °C - - 250 µA

T

j

IG= ±1 mA;

−55 °C<T

< 175 °C

j

12 15 - V

VGS=5V; ID=50A;

Figure 7 and 8

- 5.8 7 mΩ

= 175 °C-− 14 mΩ

T

j

= 4.5 V; ID=50A - 6 7.7 mΩ

V

GS

=10V; ID= 50 A - 5.2 6.2 mΩ

V

GS

IF= 250 µA 648 658 668 mV

IF= 250 µA;

−55 °C<T

< 175 °C

j

1.4 1.54 1.68 mV/K

125 µA<IF< 250 µA 253250mV

- 5836 - pF

f = 1 MHz; Figure 12

-3-µs

=5V; RG=1kΩ

V

GS

- 2.5 - nH of drain mounting base to centre of die

- 7.5 - nH to source bond pad

9397 750 09139

Product data Rev. 01 — 28 January 2002 6 of 15

Philips Semiconductors

BUK9907-40ATC

TrenchPLUS logic level FET

Table 5: Characteristics

…continued

Tj=25°C unless otherwise speciﬁed

Symbol Parameter Conditions Min Typ Max Unit

Source-drain diode

V

SD

source-drain (diode forward) voltage

t

rr

Q

r

reverse recovery time IS=20A;dIS/dt = −100 A/µs recovered charge - 250 - nC

IS= 25 A; VGS=0V;

Figure 19

= −10 V; VDS=30V

V

GS

- 0.85 1.2 V

-85-ns

9397 750 09139

Product data Rev. 01 — 28 January 2002 7 of 15

Philips Semiconductors

BUK9907-40ATC

TrenchPLUS logic level FET

V

03ne77

DS

(V)

4

3.8

3.6

3.4

3.2

3

2.8

2.6

2.4

2.2

400

I

D

V

= 5 V

(A)

GS

350

300

250

200

150

100

50

6

10

0

0246810

4.6

4.4

4.2

Tj=25°C; tp= 300 µsT

Fig 5. Output characteristics: drain current as a

Fig 6. Drain-source on-state resistance as a function

function of drain-source voltage; typical values.

R

16

DSon

(mΩ)

14

VGS = 3 V

3.2

3.4

3.6

3.8

03ne78

4

25

R

DSon

(mΩ)

20

15

10

5

0

246810

=25°C; ID=50A

j

of gate-source voltage; typical values.

2

a

1.5

03ne79

(V)

V

GS

03ne89

12

10

8

6

0 50 100 150 200 250 300

5

10

I

(A)

D

Tj=25°C; tp= 300µs

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

1

0.5

0

-60 0 60 120 180

R

DSon

=

a

---------------------------- -

R

DSon 25 C°()

Tj (ºC)

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

9397 750 09139

Product data Rev. 01 — 28 January 2002 8 of 15

Philips Semiconductors

BUK9907-40ATC

TrenchPLUS logic level FET

2.5

V

GS(th)

(V)

2

1.5

1

0.5

0

-60 -20 20 60 100 140 180

ID= 1 mA; VDS=V

max

typ

min

GS

03na17

Tj (oC)

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

I

D

03ne81

(A)

140

g

fs

(S)

120

100

80

60

40

20

0

0 20406080100

-1

10

I

D

(A)

-2

10

-3

10

-4

10

-5

10

-6

10

0 0.5 1 1.5 2 2.5 3

Tj=25°C; VDS=V

min

GS

03na18

maxtyp

VGS (V)

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

16000

C (pF)

14000

12000

10000

8000

6000

4000

2000

0

-2

10

-1

1 10 10

03ne86

VDS(V)

C

iss

C

oss

C

rss

2

Tj=25°C; VDS=25V VGS= 0 V; f = 1 MHz

Fig 11. Forward transconductance as a function of

drain current; typical values.

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical values.

9397 750 09139

Product data Rev. 01 — 28 January 2002 9 of 15

Philips Semiconductors

BUK9907-40ATC

TrenchPLUS logic level FET

T

j

V

GS

03ne80

=25ºC

(V)

V

(V)

5

GS

4

3

2

1

0

100

I

D

(A)

80

60

T

= 175 ºC

j

40

20

0

0.0 1.0 2.0 3.0

VDS=25V Tj=25°C; ID=50A

Fig 13. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

51

V

DSR(CL)

(V)

50.5

50

49.5

49

Tj = 175 ºC

Tj = 25 ºC

Tj = -55 ºC

03ne82

Fig 14. Gate-source voltage as a function of turn-on

gate charge; typical values.

54

V

DSR(CL)

(V)

52

50

48

46

44

42

03ne87

V

= 14 V

DS

V

= 35 V

DS

0 20 40 60 80 100 120

Tj = 175 ºC

Tj = 25 ºC

Q

Tj = -55 ºC

G

(nC)

03ne83

48.5 0246810

I

= −2mA ID=10A

DG(CL)

I

(A)

D

Fig 15. Drain-source clamping voltage as a function of

drain current; typical values.

9397 750 09139

Fig 16. Drain-source clamping voltage as a function of

40

0123

-I

GS(CL)

(mA)

gate current; typical values.

Product data Rev. 01 — 28 January 2002 10 of 15

Philips Semiconductors

BUK9907-40ATC

TrenchPLUS logic level FET

700 V

F

(mV)

600

500

400

0 50 100 150 200

03ne84

(ºC)

T

j

IF= 250 µAV

Fig 17. Forward voltage of temperature sense diode as

Fig 18. Temperature coefﬁcient of temperature sense a function of junction temperature; typical values.

100

I

S

(A)

80

Tj = 175 ºC

60

1.70

-S

F

(mV/K)

1.65

1.60

1.55

1.50

1.45

1.40 645 650 655 660 665 670 675

at Tj=25°C; IF= 250 µA

F

max

typ

min

diode as a function of forward voltage; typical values.

03ne88

03ne85

VF (mV)

40

T

= 25 ºC

j

20

0

0.0 0.5 1.0 1.5

(V)

V

SD

VGS=0V

Fig 19. Reverse diode current as a function of reverse diode voltage; typical values.

9397 750 09139

Product data Rev. 01 — 28 January 2002 11 of 15

Philips Semiconductors

BUK9907-40ATC

TrenchPLUS logic level FET

9. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 SOT263B

E

p

1

∅ p

q

D

1

A

1

D

L

m

15

e

DIMENSIONS (mm are the original dimensions)

A

1.39

1.27

b

1

0.85

0.70

IEC JEDEC EIAJ

0.7

0.4

D

c

15.8

15.2

UNIT

Notes

1. Terminal dimensions are uncontrolled in this zone.

2. Positional accuracy of the terminals is controlled in this zone.

A

4.5

mm

4.1

OUTLINE VERSION

SOT263B 5-lead TO-220

D

1

6.4

5.9

REFERENCES

b

E

10.3

9.7

L

1

L

2

w M

0 5 10 mm

scale

(1)

L

1

2.4

1.6

1.7

e

15.0

13.5

mounting

base

(2)

L

2

0.5

0.8

0.6

Q

c

p

1

4.3

4.1

qQ

3.0

2.6

2.7

2.2

ISSUE DATE

w

0.4

01-01-11

∅ p

m

3.8

3.6

EUROPEAN

PROJECTION

Fig 20. SOT263B.

9397 750 09139

Product data Rev. 01 — 28 January 2002 12 of 15

Philips Semiconductors

10. Revision history

Table 6: Revision history

Rev Date CPCN Description

01 20020128 - Product data; initial version

BUK9907-40ATC

TrenchPLUS logic level FET

9397 750 09139

Product data Rev. 01 — 28 January 2002 13 of 15

Philips Semiconductors

11. Data sheet status

BUK9907-40ATC

TrenchPLUS logic level FET

Data sheet status

Objective data Development This data sheet contains datafrom the objective speciﬁcation forproduct development. Philips Semiconductors

Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published at a

Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[1]

Product status

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2]

Deﬁnition

reserves the right to change the speciﬁcation in any manner without notice.

later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product.

make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notiﬁcation (CPCN) procedure SNW-SQ-650A.

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, andmakes no representations orwarrantiesthat these products are free from patent, copyright,or mask work right infringement, unless otherwise speciﬁed.

14. Trademarks

TrenchMOS —is a trademark of Koninklijke Philips Electronics N.V.

Contact information

For additional information, please visit http://www.semiconductors.philips.com. For sales ofﬁce addresses, send e-mail to: [email protected]. Fax: +31 40 27 24825

9397 750 09139

Product data Rev. 01 — 28 January 2002 14 of 15

Philips Semiconductors

Contents

1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5

7.1 Transient thermal impedance . . . . . . . . . . . . . . 5

8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 14

12 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

BUK9907-40ATC

TrenchPLUS logic level FET

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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Date of release: 28 January 2002 Document order number: 9397 750 09139