Philips buk9508-55_2 Datasheet

Philips Semiconductors Product specification

TrenchMOS transistor BUK9508-55
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effectpowertransistorina
plastic envelope using ’trench’V
technology.Thedevicefeatures very I
low on-state resistance and has P
integral zener diodes giving ESD T
protectionupto 2kV. Itis intended for R

DS

D

tot
j

DS(ON)

use in automotive and general resistance VGS = 5 V
purpose switching applications.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Drain-source voltage 55 V
Drain current (DC) 75 A
Total power dissipation 187 W
Junction temperature 175 ˚C
Drain-source on-state 8 mΩ

PIN DESCRIPTION

tab

d

1 gate
2 drain
3 source

tab drain

123

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V
I

D

I

D

I

DM

P
T

DS
DGR

tot

stg

GS

, T

j

Drain-source voltage - - 55 V
Drain-gate voltage RGS = 20 kΩ -55V
Gate-source voltage - - 10 V
Drain current (DC) Tmb = 25 ˚C - 75 A
Drain current (DC) Tmb = 100 ˚C - 65 A
Drain current (pulse peak value) Tmb = 25 ˚C - 240 A
Total power dissipation Tmb = 25 ˚C - 187 W
Storage & operating temperature - - 55 175 ˚C

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

C

Electrostatic discharge capacitor Human body model - 2 kV
voltage (100 pF, 1.5 kΩ)

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-mb

R

th j-a

February 1997 1 Rev 1.000

Thermal resistance junction to - - 0.8 K/W
mounting base
Thermal resistance junction to in free air 60 - K/W
ambient

Philips Semiconductors Product specification

TrenchMOS transistor BUK9508-55

Logic level FET

STATIC CHARACTERISTICS

Tj= 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

GSS

±V
R

DS(ON)

(BR)GSS

Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 55 - - V
voltage Tj = -55˚C 50 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 1.0 1.5 2.0 V

Tj = 175˚C 0.5 - - V

Tj = -55˚C - - 2.3 V

Zero gate voltage drain current VDS = 55 V; VGS = 0 V; - 0.05 10 µA

Tj = 175˚C - - 500 uA

Gate source leakage current VGS = ±5 V; VDS = 0 V - 0.02 1 µA

Tj = 175˚C - - 10 µA
Gate-source breakdown IG = ±1 mA; 10 - - V
voltage
Drain-source on-state VGS = 5 V; ID = 25 A - 6.5 8 mΩ
resistance Tj = 175˚C - - 17 mΩ

DYNAMIC CHARACTERISTICS

Tmb = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g
C

C
C

t
t
t
t

L

fs

iss
oss
rss

d on
r
d off
f

d

Forward transconductance VDS = 25 V; ID = 25 A 40 90 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 5200 6900 pF

Output capacitance - 840 1000 pF
Feedback capacitance - 350 480 pF

Turn-on delay time VDD = 30 V; ID = 25 A; - 45 60 ns
Turn-on rise time VGS = 5 V; RG = 10 Ω - 120 170 ns
Turn-off delay time - 225 300 ns
Turn-off fall time - 100 135 ns

Internal drain inductance Measured from contact screw on - 3.5 - nH

tab to centre of die

L

d

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

L

s

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V

t

rr

Q

SD

rr

Continuous reverse drain - - 75 A
current
Pulsed reverse drain current - - 240 A
Diode forward voltage IF = 25 A; VGS = 0 V - 0.85 1.2 V

IF = 75 A; VGS = 0 V - 1.0 - V

Reverse recovery time IF = 75 A; -dIF/dt = 100 A/µs; - 65 - ns
Reverse recovery charge VGS = -10 V; VR = 30 V - 0.18 - µC

February 1997 2 Rev 1.000

Philips Semiconductors Product specification

TrenchMOS transistor BUK9508-55

Logic level FET

AVALANCHE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

Drain-source non-repetitive ID = 75 A; VDD ≤ 25 V; - - 500 mJ
unclamped inductive turn-off VGS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C
energy

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 5 V

D 25 ˚C

1000

ID / A

RDS(ON) = VDS/ID

100

10

1

1

DC

10

VDS / V

BUKX508-55

tp = 10 us
100 us

1 ms
10 ms

100 ms

100

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

Zth / (K/W)

1E+00

0.5

1E-01

1E-02

1E-03

0.2

0.1

0.05

t

p

t / s

P

D

0.02

0

1E-07 1E-05 1E-03 1E-01 1E+01

t

p

D =

T

t

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

p

February 1997 3 Rev 1.000

Philips Semiconductors Product specification

TrenchMOS transistor BUK9508-55
Logic level FET

100

10

3.4

ID/A

80

60

40

20

0

4.0

0246810

VDS/V

VGS/V =

3.2

3.0

2.8

2.6

2.4

2.2

Fig.5. Typical output characteristics, Tj = 25 ˚C

RDS(ON) / mOhm

15

10

5

ID = f(VDS); parameter V

VGS / V =

3 3.2 3.4

GS

BUK9508-55

3.6

4
5

10

120

gfs/S

110
100

90
80
70
60
50
40
30
20
10

0

0 20406080100

.

Fig.8. Typical transconductance, Tj = 25 ˚C

ID/A

.

gfs = f(ID); conditions: VDS = 25 V

2.5

1.5

a

2

1

BUK959-60

Rds(on) normlised to 25degC

0

0 20 40 60 80 100 120

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

DS(ON)

100

ID/A

80

60

40

20

0

01234

ID / A

= f(ID); parameter V

Tj/C = 175 25

VGS/V

.

GS

Fig.7. Typical transfer characteristics.

ID = f(VGS) ; conditions: VDS = 25 V; parameter T

j

0.5

-100 -50 0 50 100 150 200
Tmb / degC

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C

VGS(TO) / V

2.5
max.

2

typ.

1.5

min.

1

0.5

0

-100 -50 0 50 100 150 200

= f(Tj); ID = 25 A; VGS = 5 V

BUK959-60

Tj / C

Fig.10. Gate threshold voltage.

V

= f(Tj); conditions: ID = 1 mA; VDS = V

GS(TO)

GS

February 1997 4 Rev 1.000

Philips Semiconductors Product specification

TrenchMOS transistor BUK9508-55
Logic level FET

1E-01

1E-02

1E-03

1E-04

1E-05

1E-05

0 0.5 1 1.5 2 2.5 3

2% typ

Sub-Threshold Conduction

98%

Fig.11. Sub-threshold drain current.

ID = f(V

12

10

8

6

Thousands (pF)

4

2

0

0.01 0.1 1 10 100

Fig.12. Typical capacitances, C

; conditions: Tj = 25 ˚C; VDS = V

GS)

VDS/V

, C

iss

oss

C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

, C

GS

rss

Ciss

Coss
Crss

.

100

IF/A

80

60

40

20

0

0 0.2 0.4 0.6 0.8 1 1.2

Tj/C = 175 25

VSDS/V

Fig.14. Typical reverse diode current.

IF = f(V

120
110
100

90
80
70
60
50
40
30
20
10

0

); conditions: V

SDS

WDSS%

20 40 60 80 100 120 140 160 180

= 0 V; parameter T

GS

Tmb / C

Fig.15. Normalised avalanche energy rating.

W

% = f(Tmb); conditions: ID = 75 A

DSS

j

6

VGS/V

5

4

3

2

1

0

0 102030405060708090

VDS = 14V

VDS = 44V

QG/nC

Fig.13. Typical turn-on gate-charge characteristics.

V

= f(QG); conditions: ID = 50 A; parameter V

GS

DS

L

VDS

VGS

0

RGS

T.U.T.

Fig.16. Avalanche energy test circuit.

W

= 0.5 ⋅LI

DSS

2

D

⋅BV

DSS

/(BV

R 01

shunt

DSS−VDD

VDD

+

-

-ID/100

)

February 1997 5 Rev 1.000

Philips Semiconductors Product specification

TrenchMOS transistor BUK9508-55
Logic level FET

VDD

+

RD

VDS

VGS

0

RG

T.U.T.

Fig.17. Switching test circuit.

-

February 1997 6 Rev 1.000

Philips Semiconductors Product specification

TrenchMOS transistor BUK9508-55

Logic level FET

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

10,3
max

1,3

3,7

4,5
max

3,0 max

not tinned

1,3

max

(2x)

123

2,54 2,54

2,8

3,0

13,5

min

0,9 max (3x)

5,9

min

15,8

max

0,6

2,4

Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.

2. Refer to mounting instructions for SOT78 (TO220) envelopes.

3. Epoxy meets UL94 V0 at 1/8".

February 1997 7 Rev 1.000

Philips Semiconductors Product specification

TrenchMOS transistor BUK9508-55

Logic level FET

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

February 1997 8 Rev 1.000