Philips buk7y13-40b Datasheet

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Page 1

BUK7Y13-40B

N-channel TrenchMOS standard level FET

Rev. 03 — 26 May 2008 Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 175 °C rated  Q101 compliant  Suitable for standard level gate drive

sources

 Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

 12 V loads  Air bag  Automotive ABS systems  Automotive transmission control  Fuel pump and injection  Motors, lamps and solenoids

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

tot

Dynamic characteristics

Static characteristics

DSon

Avalanche ruggedness

DS(AL)S

drain-source voltage Tj≥ 25 °C; Tj≤ 175 °C --40V drain current VGS=10V; Tmb=25°C;

see Figure 1 and 4

total power dissipation Tmb=25°C; see Figure 2 --85W

gate-drain charge ID=10A; VDS=32V;

VGS= 10 V; see Figure 14

drain-source on-state resistance

non-repetitive drain-source avalanche energy

VGS=10V; ID=25A;

=25°C; see Figure 13 and

ID=58A; V RGS=50Ω; VGS=10V;

=25°C; unclamped

j(init)

sup

≤ 40 V;

--58A

-5-nC

-1113mΩ

--85mJ

Page 2

NXP Semiconductors

2. Pinning information

BUK7Y13-40B

N-channel TrenchMOS standard level FET

Table 2. Pinning

Pin Symbol Description Simplified outline Graphic symbol

1, 2, 3 S source

4 G gate mb D mounting base;

connected to drain

1234

bb076

SOT669 (LFPAK)

3. Ordering information

Table 3. Ordering information

Type number Package

BUK7Y13-40B LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669

Name Description Version

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V V V I

I P T T

DS DGR GS

tot stg j

drain-source voltage Tj≥ 25 °C; Tj≤ 175 °C-40V drain-gate voltage RGS=20kΩ -40V gate-source voltage 20 20 V drain current Tmb=25°C; VGS= 10 V; see Figure 1 and 4 -58A

peak drain current Tmb=25°C; tp≤ 10 μs; pulsed; see Figure 4 - 234 A total power dissipation Tmb=25°C; see Figure 2 -85W storage temperature -55 175 °C junction temperature -55 175 °C

Avalanche ruggedness

DS(AL)S

non-repetitive drain-source avalanche energy

DS(AL)R

repetitive drain-source avalanche energy

Source-drain diode

source current Tmb=25°C-58A peak source current tp≤ 10 μs; pulsed; Tmb=25°C - 234 A

= 175 °C; VGS= 10 V; see Figure 1 -41A

ID=58A; V

=10V; T

see Figure 3

≤ 40 V; RGS=50Ω;

sup

=25°C; unclamped

j(init)

-85mJ

[1][2]

--J

[3]

[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [2] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [3] Refer to application note AN10273 for further information.

Product data sheet Rev. 03 — 26 May 2008 2 of 12

Page 3

NXP Semiconductors

der

tot

tot(25°C

)

× 100 %

(A)

003aab217

BUK7Y13-40B

N-channel TrenchMOS standard level FET

120

der

(%)

03na19

0 50 100 150 200

(°C)

VGS 10V

Fig 1. Continuous drain current as a function of

mounting base temperature

(A)

0 20015050 100

Tmb (°C)

Fig 2. Normalized total power di ss ipation as a

function of mounting base temperature

003aab220

(1)

(2)

(3)

-1

-3

-2

-1

1 10

(ms)

(1) Singleípulse;Tj=25°C. (2) Singleípulse;T

= 150°C.

(3) Repetitive.

Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche perio d

Product data sheet Rev. 03 — 26 May 2008 3 of 12

Page 4

NXP Semiconductors

BUK7Y13-40B

N-channel TrenchMOS standard level FET

(A)

Limit R

−1

1 10

DSon

= VDS / I

tp = 10 μs

100 μs

VDS (V)

1 ms

10 ms

100 ms

Tmb=25°C;IDMis single pulse

Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

5. Thermal characteristics

003aab218

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-mb)

thermal resistance

see Figure 5 --1.8K/W from junction to mounting base

th (j-mb )

(K/W)

-1

-2

δ = 0.5

0.2

0.1

0.05

0.02

single shot

-6

-5

-4

-3

-2

-1

03nm01

δ =

(s)

Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

Product data sheet Rev. 03 — 26 May 2008 4 of 12

Page 5

NXP Semiconductors

6. Characteristics

BUK7Y13-40B

N-channel TrenchMOS standard level FET

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

(BR)DSS

GS(th)

drain-source breakdown voltage

gate-source threshold voltage

ID=250μA; VGS=0V;

Tj=25°C

=250μA; VGS=0V;

=-55°C

ID=1mA; VDS = VGS; Tj=25°C;

see Figure 10

=1mA; VDS = VGS;

and 11

40 - - V

36 - - V

234V

--4.4V

Tj=-55°C; see Figure 10

DSS

=1mA; VDS = VGS;

= 175 °C; see Figure 10

drain leakage current VDS=40V; VGS=0V;

1- - V

--500μA

Tj= 175 °C

=40V; VGS=0V; Tj=25°C - 0.02 1 μA

GSS

gate leakage current VDS=0V; VGS=20V; Tj=25°C - 2 100 nA

=0V; VGS=-20V;

-2100nA

Tj=25°C

DSon

drain-source on-state resistance

VGS=10V; ID=25A;

= 175 °C; see Figure 12

=10V; ID=25A; Tj=25°C;

--25mΩ

-1113mΩ

see Figure 13 and 12

Source-drain diode

source-drain voltage IS=25A; VGS=25V; Tj=25°C;

-0.851.2V

see Figure 16

reverse recovery time IS=20A; dIS/dt = 100 A/μs;

=0V; VDS=30V

recovered charge - 22 - nC

-41-ns

Dynamic characteristi cs

Q Q Q C C C

G(tot) GS

GD iss oss rss

total gate charge ID=10A; VDS=32V; gate-source charge - 6 - nC

VGS=10V; seeFigure 14

gate-drain charge - 5 - nC input capacitance VGS=0V; VDS=25V; output capacitance - 280 336 pF

f=1MHz; Tj=25°C; see Figure 15

reverse transfer

-19-nC

- 983 1311 pF

- 138 189 pF

capacitance

d(on)

d(off)

turn-on delay time VDS=30V; RL=2.5Ω; rise time - 25 - ns

VGS=10V; R

G(ext)

=10Ω

turn-off delay time - 35 - ns fall time - 27 - ns

-9-ns

Product data sheet Rev. 03 — 26 May 2008 5 of 12

Page 6

NXP Semiconductors

=25°C;ID=25A

=25°C;VDS=25V

BUK7Y13-40B

N-channel TrenchMOS standard level FET

003aab394

7.5

6.5

5.5

VDS (V)

(A)

160

120

0108262

9.51020 9

8.5

VGS (V) = 4.5

Tj=25°C

Fig 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

003aab400

(A)

DSon

(mΩ)

42016812

003aab395

(V)

Fig 7. Drain-source on-state resistance as a function

of gate-source volta ge; typical values

003aab401

(S)

0642

Tj = 175 °C

Tj = 25 °C

VGS (V)

VDS=25V

Fig 8. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

5302515 2010

(A)

Fig 9. Forward transconductance as a function of

drain current; typical values

Product data sheet Rev. 03 — 26 May 2008 6 of 12

Page 7

NXP Semiconductors

=25°C;VDS=V

=25°C

BUK7Y13-40B

N-channel TrenchMOS standard level FET

GS(th)

(V)

−60 180120060

ID=1mA;VDS=V

max

typ

min

03aa32

Tj (°C)

Fig 10. Gate-source threshold voltage as a function of

junction temperature

1.5

0.5

003aab851

−1

(A)

−2

−3

−4

−5

−6

0642

min typ max

03aa35

VGS (V)

Fig 11. Sub-threshold drain current as a function of

gate-source volt age

003aab396

DSon

(mΩ)

VGS (V) = 6

Product data sheet Rev. 03 — 26 May 2008 7 of 12

−60 180120060

DSon

a =

DSon(25°C

)

Tj (°C)

Fig 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

0 16012040 80

ID (A)

Fig 13. Drain-source on-state resistance as a function

of drain current; typical values

Page 8

NXP Semiconductors

=0V; f =1MHz

BUK7Y13-40B

N-channel TrenchMOS standard level FET

(V)

024168

VDS = 14 V

003aab399

VDS = 32 V

QG (nC)

Tj=25°C;ID=10A

Fig 14. Gate-source voltage as a function of gate

charge; typical values

1600

(pF)

1200

800

400

iss

oss

rss

−1

003aab397

(V)

101

Fig 15. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical values

003aab398

(A)

Tj = 175 °C

0 1.00.80.4 0.60.2

Tj = 25 °C

VSD (V)

VGS=0V

Fig 16. Source current as a function of source-drain voltage; typical values

Product data sheet Rev. 03 — 26 May 2008 8 of 12

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NXP Semiconductors

7. Package outline

Plastic single-ended surface-mounted package (LFPAK); 4 leads

BUK7Y13-40B

N-channel TrenchMOS standard level FET

SOT669

234

1/2 e

mounting

base

detail X

(A )

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

UNIT

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

OUTLINE VERSION

0.15

1.20

0.00

1.01

SOT669 MO-235

1.10

0.25 4.20 1.27 0.25 0.1

0.95

IEC JEDEC JEITA

bcA e

0.50

4.41

0.35

3.62

2.2

2.0

0.9

0.25

0.7

0.19

REFERENCES

0.30

0.24

(1)

4.10

3.80

max

5.0

4.8

(1)

3.3

3.1

6.2

0.85

5.8

0.40

EUROPEAN

PROJECTION

1.3

0.8

1.3

0.8

ISSUE DATE

04-10-13 06-03-16

8° 0°

Fig 17. Package outline SOT669 (LFPAK)

Product data sheet Rev. 03 — 26 May 2008 9 of 12

Page 10

NXP Semiconductors

BUK7Y13-40B

N-channel TrenchMOS standard level FET

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BUK7Y13-40B_3 20080526 Product data sheet - BUK7Y13-40B_2 Modifications: BUK7Y13-40B_2 20071002 Product data sheet - BUK7Y13-40B_1 BUK7Y13-40B_1 20070924 Product data sheet - -

• Table 5, maximum th ermal resistance value updated

Product data sheet Rev. 03 — 26 May 2008 10 of 12

Page 11

NXP Semiconductors

BUK7Y13-40B

N-channel TrenchMOS standard level FET

9. Legal information

9.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

9.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconduct ors does not give any repr esentatio ns or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertain i ng to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

9.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

TrenchMOS — is a trademark of NXP B.V.

10. Contact information

For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected]

Product data sheet Rev. 03 — 26 May 2008 11 of 12

Page 12

NXP Semiconductors

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Contact information. . . . . . . . . . . . . . . . . . . . . 11

11 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

BUK7Y13-40B

N-channel TrenchMOS standard level FET

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 26 May 2008

Document identifier: BUK7Y13-40B_3