Philips buk7e2r3-40c Datasheet

Page 1

1. Product profile

1.1 General description

Stan dard level gate drive N-channel e nhancement mode Field-Ef fect T ransistor (FET) in a plastic package using advanced T renchMOS technolo gy. This product has been designed and qualified to the appropriate AEC standard for use in high performan ce automotive applications.

1.2 Features and benefits

BUK7E2R3-40C

N-channel TrenchMOS standard level FET

Rev. 03 — 26 January 2009 Product data sheet

 AEC Q101 compliant  Avalanche robust

 Suitable for standard level gate drive  Suitable for thermally demanding

environment up to 175°C rating

1.3 Applications

 12V Motor, lamp and solenoid loads  High performance automotive power

systems

 High performance Pulse Width

Modulation (PWM) applications

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

tot

Static characteristics

DSon

Avalanche ruggedness

DS(AL)S

drain-source voltage Tj≥ 25 °C; Tj≤ 175 °C - - 40 V drain current VGS=10V; Tmb=25°C;

; see Figure 3;

≤ 40 V;

sup

= 25 °C; unclamped

total power dissipation

drain-source on-state resistance

non-repetitive drain-source avalanche energy

see Figure 1 Tmb= 25 °C; see Figure 2 - - 333 W

VGS=10V; ID=25A; Tj= 25 °C; see Figure 12; see Figure 13

ID= 100 A; V RGS=50Ω; VGS=10V; T

j(init)

[1]

- - 100 A

[2]

- 1.96 2.3 mΩ

--1.2J

[1] Refer to document 9397 750 12572 for further information. [2] Continuous current is limited by package.

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NXP Semiconductors

2. Pinning information

BUK7E2R3-40C

N-channel TrenchMOS standard level FET

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1G gate 2D drain 3S source

mb D mounting base; connected to

drain

321

mbb076

SOT226

(TO-220 A B ; I 2 PAK)

3. Ordering information

Table 3. Ordering information

Type number Package

BUK7E2R3-40C TO-220AB;

Name Description Version

plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB SOT226

I2PAK

Product data sheet Rev. 03 — 26 January 2009 2 of 14

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NXP Semiconductors

4. Limiting values

BUK7E2R3-40C

N-channel TrenchMOS standard level FET

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

DGR

tot

stg

Source-drain diode

Avalanche ruggedness

DS(AL)S

DS(AL)R

drain-source voltage Tj≥ 25 °C; Tj≤ 175 °C - 40 V drain-gate voltage RGS=20kΩ -40V gate-source voltage -20 20 V drain current Tmb=25°C; VGS=10V; see Figure 1;

[1][2] -100A

see Figure 3;

=25°C; VGS=10V; see Figure 1;

see Figure 3 T

=100°C; VGS= 10 V; see Figure 1; [1][2] -100A

;

[1]

[3] -276A

peak drain current Tmb=25°C; tp≤ 10 µs; pulsed; see Figure 3 -1104A total power dissipation Tmb=25°C; see Figure 2 -333W storage temperature -55 175 °C junction temperature -55 175 °C

source current Tmb=25°C; [1][3] -276A

=25°C; [1][2] -100A

peak source current tp≤ 10 µs; pulsed; Tmb=25°C - 1104 A

non-repetitive drain-source avalanche

ID=100A; V T

= 25 °C; unclamped

j(init)

≤ 40 V; RGS=50Ω; VGS=10V;

sup

-1.2J

energy repetitive drain-source

avalanche energy

see Figure 4; [4][5]

[6][7]

--J

[1] Refer to document 9397 750 12572 for further information. [2] Continuous current is limited by package. [3] Current is limited by power dissipation chip rating. [4] Maximum value not quoted. Repetitive rating defined in avalanche rating figure. [5] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [6] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [7] Refer to application note AN10273 for further information.

Product data sheet Rev. 03 — 26 January 2009 3 of 14

Page 4

NXP Semiconductors

BUK7E2R3-40C

N-channel TrenchMOS standard level FET

300

(A)

200

100

(1)

0 50 100 150 200

003aab004

(°C)

Fig 1. Continuous drain current as a function of

mounting base temperature

(A)

limit R

DSon

= VDS/I

120

der

(%)

0 20015050 100

03aa16

Tmb (°C)

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

003aab028

δ = 10 μs

VDS (V)

100 μs

1 ms

10 ms 100 ms

−1

(1)

101

Fig 3. Safe operating area; continuous and peak drain cur rents as a function of drain-source voltage

Product data sheet Rev. 03 — 26 January 2009 4 of 14

Page 5

NXP Semiconductors

BUK7E2R3-40C

N-channel TrenchMOS standard level FET

003aab013

(A)

(1)

(2)

(3)

-3

-2

-1

1 10

(ms)

Fig 4. Single-pulse and repetitive avalanche rating; avalanche current as a fun ction of avalanche time

Product data sheet Rev. 03 — 26 January 2009 5 of 14

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NXP Semiconductors

5. Thermal characteristics

BUK7E2R3-40C

N-channel TrenchMOS standard level FET

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-mb)

thermal resistance from

see Figure 5 - - 0.45 K/W junction to mounting base

th(j-a)

thermal resistance from

vertical in free air - 50 - K/W junction to ambient

003aab020

tp (s)

δ =

110

th(j-mb)

(K/W)

δ = 0.5

0.2

−1

0.1

0.05

0.02

−2

single shot

−3

−6

−5

−4

−3

−2

−1

Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

Product data sheet Rev. 03 — 26 January 2009 6 of 14

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NXP Semiconductors

6. Characteristics

BUK7E2R3-40C

N-channel TrenchMOS standard level FET

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

(BR)DSS

GS(th)

GSth

DSS

GSS

DSon

DSS

drain-source breakdown voltage

gate-source threshold voltage

drain leakage current VDS=40V; VGS=0V; Tj= 25 °C - 0.02 1 µA gate leakage current VDS=0V; VGS=20V; Tj= 25 °C - 2 100 nA

drain-source on-state resistance

drain leakage current VDS=40V; VGS=0V; Tj= 175 °C - - 500 µA

ID=250µA; VGS=0V; Tj=-55°C 36 - - V

=250µA; VGS=0V; Tj=25°C 40 - - V

ID=1mA; VDS = VGS; Tj=25°C; see

234V

Figure 10; see Figure 11

ID=1mA; VDS = VGS; Tj= 175 °C; see

Figure 10

; see Figure 11

=1mA; VDS = VGS; Tj=-55°C; see

; see Figure 11

=0V; VGS=-20V; Tj= 25 °C - 2 100 nA

VGS=10V; ID=25A; Tj= 175 °C; see

1- - V

--4.4V

--4.26mΩ

Figure 12; see Figure 13

=10V; ID=25A; Tj=25°C; see

Figure 12

; see Figure 13

- 1.96 2.3 mΩ

Dynamic characteristi cs

Q Q Q V

G(tot) GS GD

GS(pl)

total gate charge ID=25A; VDS=32V; VGS=10V; see gate-source charge - 49 - nC

Figure 15

gate-drain charge - 67 - nC gate-source plateau

ID=25A; VDS=32V; see Figure 15 -5-V

- 175 - nC

voltage

iss

oss

rss

input capacitance VGS=0V; VDS=25V; f=1MHz;

=25°C; see Figure 16

output capacitance - 1606 1927 pF

reverse transfer

- 8492 11323 pF

- 1101 1508 pF

capacitance

d(on)

d(off)

turn-on delay time VDS=30V; RL=1.2Ω; VGS=10V;

=10Ω

rise time - 133 - ns

G(ext)

-65-ns

turn-off delay time - 146 - ns fall time - 119 - ns internal drain

inductance

from drain lead 6 mm from package to

centre of die

from upper edge of drain mounting base to

-4.5-nH

-2.5-nH

centre of die

internal source

from source lead to source bonding pad - 7.5 - nH inductance

Source-drain diode

source-drain voltage IS=25A; VGS=0V; Tj= 25 °C; see

- 0.85 1.2 V

Figure 14

Product data sheet Rev. 03 — 26 January 2009 7 of 14

reverse recovery time IS=20A; dIS/dt = -100 A/µs; VGS=0V; recovered charge - 57 - nC

VDS=30V

-75-ns

Page 8

NXP Semiconductors

BUK7E2R3-40C

N-channel TrenchMOS standard level FET

003aab005

VDS (V)

(A)

300

200

100

20 10

6.5

0108462

VGS (V) = 6

5.5

4.5

Fig 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

180

(S)

120

003aab008

DSon

(mΩ)

0 300200100

VGS (V) = 5.5

003aab007

6.5

ID (A)

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values

400

(A)

300

003aab010

0 20406080

(A)

Fig 8. Forward transconductance as a fun ction of

drain current; typical values

200

100

Tj = 175 °C Tj = 25 °C

013467

(V)

Fig 9. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Product data sheet Rev. 03 — 26 January 2009 8 of 14

Page 9

NXP Semiconductors

BUK7E2R3-40C

N-channel TrenchMOS standard level FET

GS(th)

(V)

−60 180120060

max

typ

min

03aa32

Tj (°C)

Fig 10. G ate-source threshold voltage as a function of

junction temperature

003aab006

DSon

(mΩ)

−1

(A)

−2

−3

−4

−5

−6

0642

min typ max

03aa35

VGS (V)

Fig 11. Sub-threshold drain current as a function of

gate-source voltage

1.5

03aa27

5101520

(V)

Fig 12. Drain-source on-state resistance as a function

of gate-source voltage; typical values

0.5

-60 0 60 120 180 T

(°C)

Fig 13. Normalized drain-so urce on-state resistance

factor as a function of junction temperature

Product data sheet Rev. 03 — 26 January 2009 9 of 14

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NXP Semiconductors

BUK7E2R3-40C

N-channel TrenchMOS standard level FET

200

(A)

150

100

Tj = 175 °C Tj = 25 °C

0.0 0.5 1.0 1.5 2.0

003aab012

(V)

Fig 14. Source current as a function of source-drain

voltage; typical values

14000

(pF)

10500

iss

oss

(V)

0 50 100 150 200

VDD = 14 V VDD = 32 V

003aab011

(nC)

Fig 15. G ate-source voltage as a function of gate

charge; typical values

003aab009

7000

rss

3500

−2

−1

1010

(V)

Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values

Product data sheet Rev. 03 — 26 January 2009 10 of 14

Page 11

NXP Semiconductors

BUK7E2R3-40C

N-channel TrenchMOS standard level FET

7. Package outline

Plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB SOT226

mounting

base

1.3

1.0

0.7

0.4

DIMENSIONS (mm are the original dimensions)

UNIT

1.40

4.5

4.1

1.27

0.85

0.60

123

max

1.6

1.2

10.3

9.7

10 mm

scale

2.54

15.0

13.5

2.6

3.30

2.2

2.79

OUTLINE VERSION

SOT226

REFERENCES

IEC JEDEC JEITA

low-profile

3-lead TO-220AB

EUROPEAN

PROJECTION

ISSUE DATE

05-06-23 06-02-14

Fig 17. Package outline SOT226 (I2PAK)

Product data sheet Rev. 03 — 26 January 2009 11 of 14

Page 12

NXP Semiconductors

N-channel TrenchMOS standard level FET

BUK7E2R3-40C

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BUK7E2R3-40C_3 20090126 Product data sheet - BUK75_7E2R3-40C_2 Modifications:

BUK75_7E2R3-40C_2 20060810 Product data sheet - BUK75_7E2R3-40C_1 BUK75_7E2R3-40C_1 20060503 Product data sheet - -

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Type number BUK7E2R3-40C separated from data sheet BUK75_7E2R3-40C_2.

Product data sheet Rev. 03 — 26 January 2009 12 of 14

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NXP Semiconductors

BUK7E2R3-40C

N-channel TrenchMOS standard level FET

9. Legal information

9.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com

[1][2]

Product status

[3]

Definition

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full dat a sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

9.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconduct ors does not give any repr esentatio ns or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

, including those pertaining to warranty,

9.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

TrenchMOS — is a trademark of NXP B.V.

10. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Product data sheet Rev. 03 — 26 January 2009 13 of 14

Page 14

NXP Semiconductors

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .6

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .7

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .11

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 3

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

10 Contact information. . . . . . . . . . . . . . . . . . . . . .13

BUK7E2R3-40C

N-channel TrenchMOS standard level FET

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 26 January 2009

Document identifier: BUK7E2R3-40C_3