Philips buk7e04-40a Datasheet

Page 1

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

BUK7E04-40A

N-channel TrenchMOS standard level FET

Rev. 03 — 15 June 2010 Product data sheet

 Low conduction losses due to low

on-state resistance

 Q101 compliant

 Suitable for standard level gate drive

sources

 Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

 12 V loads  Automotive and general purpose

power switching

 Motors, lamps and solenoids

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

tot

Static characteristics

DSon

drain-source voltage Tj≥ 25 °C; Tj≤ 175 °C - - 40 V drain current VGS=10V; Tmb=25°C;

see Figure 3

total power dissipation Tmb=25°C; see Figure 2 --300W

drain-source on-state resistance

VGS=10V; ID=25A; T

= 175 °C; see Figure 11;

see Figure 12

=10V; ID=25A;

=25°C; see Figure 11;

see Figure 12

; see Figure 1

[1]

--75A

--8.5mΩ

-3.94.5mΩ

Page 2

NXP Semiconductors

Table 1. Quick reference data …continued

Symbol Parameter Conditions Min Typ Max Unit

Avalanche ruggedness

DS(AL)S

Dynamic characteristics

[1] Continuous current is limited by package.

2. Pinning information

N-channel TrenchMOS standard level FET

non-repetitive drain-source avalanche energy

gate-drain charge VGS=10V; ID=25A;

ID=75A; V

=50Ω; VGS=10V;

= 25 °C; unclamped

j(init)

sup

≤ 40 V;

VDS=32V; Tj=25°C; see Figure 13

BUK7E04-40A

--1.6J

-50-nC

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate 2 D drain 3Ssource

mb D mounting base; connected to

drain

321

bb076

SOT226 (I2PAK)

3. Ordering information

Table 3. Ordering information

Type number Package

BUK7E04-40A I2PAK plastic single-ended package (I2PAK); TO-262 SOT226

Name Description Version

Product data sheet Rev. 03 — 15 June 2010 2 of 14

Page 3

NXP Semiconductors

4. Limiting values

BUK7E04-40A

N-channel TrenchMOS standard level FET

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Typ Max Unit

DGR

tot

stg

Source-drain diode

Avalanche ruggedness

DS(AL)S

drain-source voltage Tj≥ 25 °C; Tj≤ 175°C --40V drain-gate voltage RGS=20kΩ --40V gate-source voltage -20 - 20 V drain current Tmb=25°C; VGS=10V; see Figure 3;

[1]

- - 198 A

see Figure 1

=100°C; VGS= 10 V; see Figure 1

=25°C; VGS=10V; see Figure 3;

[2]

--75A

[2]

--75A

see Figure 1

peak drain current Tmb=25°C; tp≤ 10 µs; pulsed;

- - 794 A

see Figure 3 total power dissipation Tmb=25°C; see Figure 2 - - 300 W storage temperature -55 - 175 °C junction temperature -55 - 175 °C

source current Tmb=25°C

[1]

- - 198 A

[2]

--75A

peak source current tp≤ 10 µs; pulsed; Tmb= 25 °C - - 794 A

non-repetitive drain-source

ID=75A; V

=10V; T

≤ 40 V; RGS=50Ω;

sup

= 25 °C; unclamped

j(init)

--1.6J

avalanche energy

[1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package.

Product data sheet Rev. 03 — 15 June 2010 3 of 14

Page 4

NXP Semiconductors

BUK7E04-40A

N-channel TrenchMOS standard level FET

03ne93

(°C)

200

(A)

150

100

Capped at 75 A due to package

25 50 75 100 125 150 175 200

Fig 1. Normalized continuous drain current as a

function of mounting base temperature

= VDS / I

(A)

DSon

120

der

(%)

0 20015050 100

03na19

Tmb (°C)

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

03ne68

tp = 10 μs

100 μs

1 ms

10 ms

100 ms

(V)

Capped at 75 A due to package

1 10 102

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain -sou rce voltage

Product data sheet Rev. 03 — 15 June 2010 4 of 14

Page 5

NXP Semiconductors

5. Thermal characteristics

BUK7E04-40A

N-channel TrenchMOS standard level FET

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-mb)

thermal resistance from ju nction

see Figure 4 --0.5K/W

to mounting base

th(j-a)

thermal resistance from ju nction

vertical in still air - 60 - K/W

to ambient

03ne69

δ =

−1

(s)

th(j-mb)

(K/W)

−1

−2

−3

δ = 0.5

0.2

0.1

0.05

0.02

Single Shot

−6

−5

−4

−3

−2

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

Product data sheet Rev. 03 — 15 June 2010 5 of 14

Page 6

NXP Semiconductors

6. Characteristics

BUK7E04-40A

N-channel TrenchMOS standard level FET

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

(BR)DSS

GS(th)

drain-source breakdown voltage

gate-source threshold voltage ID=1mA; VDS=VGS; Tj=25°C;

ID=0.25mA; VGS=0V; Tj= -55 °C 36 - - V

=0.25mA; VGS=0V; Tj=25°C40--V

234V

see Figure 10

=1mA; VDS=VGS; Tj= 175 °C;

1--V

see Figure 10 I

=1mA; VDS=VGS; Tj=-55°C;

--4.4V

see Figure 10

DSS

GSS

DSon

drain leakage current VDS=40V; VGS=0V; Tj= 175 °C - - 500 µA

=40V; VGS=0V; Tj= 25 °C - 0.05 10 µA

gate leakage current VDS=0V; VGS=20V; Tj= 25 °C - 2 100 nA

=0V; VGS=-20V; Tj= 25 °C - 2 100 nA

drain-source on-state resistance

VGS=10V; ID=25A; Tj= 175 °C; see Figure 11; see Figure 12

=10V; ID=25A; Tj=25°C;

see Figure 11

; see Figure 12

--8.5mΩ

-3.94.5mΩ

Dynamic characteristi cs

Q Q Q C C C t

d(on)

d(off)

G(tot) GS

GD iss oss rss

total gate charge ID=25A; VDS=32V; VGS=10V; gate-source charge - 19 - nC

Tj=25°C; see Figure 13

-117-nC

gate-drain charge - 50 - nC input capacitance VGS=0V; VDS=25V; f=1MHz;

=25°C; see Figure 14

output capacitance - 1400 1680 pF

- 4300 5730 pF

reverse transfer capacitance - 800 1100 pF turn-on delay time VDS=30V; RL=1.2Ω; VGS=10V;

=10Ω; Tj=25°C

rise time - 110 - ns

G(ext)

-33-ns

turn-off delay time - 151 - ns fall time - 76 - ns internal drain inductance from upper edge of drain mounting

base to centre ; T

=25°C

from drain lead 6 mm from package to centre of die ; T

=25°C

internal source inductance from source lead to source bond

-2.5-nH

-4.5-nH

-7.5-nH

pad ; Tj=25°C

Source-drain diode

source-drain voltage IS=40A; VGS=0V; Tj=25°C;

- 0.85 1.2 V

see Figure 15

reverse recovery time IS=20A; dIS/dt = -100 A/µs;

=-10V; VDS=30V; Tj=25°C

recovered charge - 224 - nC

-96-ns

Product data sheet Rev. 03 — 15 June 2010 6 of 14

Page 7

NXP Semiconductors

BUK7E04-40A

N-channel TrenchMOS standard level FET

450

(A)

400

350

300

250

200

150

100

0246810

8.5

7.5

03ne65

VGS (V) = 5.5

(V)

6.5

4.54.5

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

03aa35

(A)

−1

−2

min typ max

DSon

(mΩ)

5101520

03ne64

(V)

Fig 6. Drain-source on-state resistance as a function

of gate-source voltage; typical values

03ne62

(S)

100

−3

−4

−5

−6

0642

VGS (V)

Fig 7. Sub-threshold drain current as a function of

gate-source voltage

0 20406080

(A)

Fig 8. Forward transconductance as a function of

drain current; typical values

Product data sheet Rev. 03 — 15 June 2010 7 of 14

Page 8

NXP Semiconductors

BUK7E04-40A

N-channel TrenchMOS standard level FET

= 25 °C

03ne63

(V)

150

(A)

100

= 175 °C

0246

Fig 9. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

03ne66

DSon

(mΩ)

VGS (V) = 6

GS(th)

(V)

−60 180120060

max

typ

min

03aa32

Tj (°C)

Fig 10. Gate-source threshold voltage as a function of

junction temperature

1.5

03aa27

0 100 200 300 400

(A)

Fig 11. Drain-source on-state resistance as a fun ction

of drain current; typical values

0.5

−60 0 60 120 180

(°C)

Fig 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

Product data sheet Rev. 03 — 15 June 2010 8 of 14

Page 9

NXP Semiconductors

BUK7E04-40A

N-channel TrenchMOS standard level FET

VDD = 32 V

(nC)

03ne61

(V)

0 30 60 90 120

VDD = 14 V

Fig 13. Gate-source voltage as a function of turn-on

gate charge; typical values

200

(A)

150

03ne67

iss

oss

rss

(V)

(nF)

−1

101

Fig 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical values

03ne60

100

= 25 °C

= 175 °C

0 0.5 1.0 1.5

(V)

Fig 15. Revers e diode current as a function of reverse diode voltage; typical values

Product data sheet Rev. 03 — 15 June 2010 9 of 14

Page 10

NXP Semiconductors

BUK7E04-40A

N-channel TrenchMOS standard level FET

7. Package outline

lastic single-ended package (I2PAK); low-profile 3-lead TO-262 SOT22

mounting

base

DIMENSIONS (mm are the original dimensions)

UNIT

0.85

1.40

4.5

4.1

1.27

0.60

1.3

1.0

0.7

0.4

123

e e

max

1.6

1.2

10.3

9.7

10 mm

scale

2.54

15.0

13.5

3.30

2.79

2.6

2.2

OUTLINE

VERSION

SOT226

REFERENCES

IEC JEDEC JEITA

TO-262

EUROPEAN

PROJECTION

ISSUE DATE

06-02-14 09-08-25

Fig 16. Package outline SOT226 (I2PAK)

Product data sheet Rev. 03 — 15 June 2010 10 of 14

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NXP Semiconductors

8. Revision history

BUK7E04-40A

N-channel TrenchMOS standard level FET

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BUK7E04-40A v.3 20100615 Product data sheet - BUK7504_7604_7E04_40A v.2 Modifications:

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Type number BUK7E04-40A separated from data sheet

BUK7504_7604_7E04_40A v.2.

BUK7504_7604_7E04_40A v.2 20011 107 Product data - -

Product data sheet Rev. 03 — 15 June 2010 11 of 14

Page 12

NXP Semiconductors

BUK7E04-40A

N-channel TrenchMOS standard level FET

9. Legal information

9.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) descr ibed in this document may have changed since this document was publish ed and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be lia ble for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. The product is not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred t o as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as de fined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

, unless otherwise

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Product data sheet Rev. 03 — 15 June 2010 12 of 14

Page 13

NXP Semiconductors

BUK7E04-40A

N-channel TrenchMOS standard level FET

Export control — This document as well as the item(s) described herein may

be subject to export control regulations. Export might require a prior authorization from national authorities.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

9.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation.

10. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Product data sheet Rev. 03 — 15 June 2010 13 of 14

Page 14

NXP Semiconductors

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

10 Contact information. . . . . . . . . . . . . . . . . . . . . .13

BUK7E04-40A

N-channel TrenchMOS standard level FET

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 15 June 2010

Document identifier: BUK7E04-40A