Philips buk764r0-75c Datasheet

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Page 1

BUK764R0-75C

D2PAK

1. Product profile

1.1 General description

1.2 Features and benefits

N-channel TrenchMOS standard level FET

Rev. 2 — 26 April 2011 Product data sheet

Stand ard level gate drive N-channel enhancement mod e Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications.

 AEC-Q101 compliant  Avalanche robust

 Suitable for standard level gate drive  Suitable for thermally demanding

environment due to 175 °C rating

1.3 Applications

 12 V Motor, lamp and solenoid loads  High performance automotive power

systems

 High performance Pulse Width

Modulation (PWM) applications

1.4 Quick reference data

Table 1. Quick reference dat a

Symbol Parameter Conditions Min Typ Max Unit

tot

drain-source voltage Tj≥ 25 °C; Tj≤ 175 °C - - 75 V drain current VGS=10V; Tmb=25°C;

; see Figure 4

total power dissipation

see Figure 1 Tmb=25°C; see Figure 2 - - 333 W

[1][2]

- - 100 A

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NXP Semiconductors

BUK764R0-75C

N-channel TrenchMOS standard level FET

Table 1. Quick reference data

…continued

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

DSon

drain-source on-state resistance

VGS=10V; ID=25A;

=25°C; see Figure 7;

-3.44mΩ

see Figure 8

GSS

gate leakage current VDS=0V; VGS=20V;

-2100nA

Tj=25°C

Avalanche ruggedness

DS(AL)S

non-repetitive drain-source avalanche energy

[1] Refer to document 9397 750 12572 for further information. [2] Continuous current is limited by package.

ID=100A; V

=50Ω; VGS=10V;

j(init)

sup

= 25 °C; unclamped

≤ 75 V;

--630mJ

2. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate 2 D drain 3Ssource mb D mounting base;

[1]

connected to drain

SOT404 (D2PAK)

bb076

[1] It is not possible to make a connection to pin 2 of the SOT404 package.

3. Ordering information

Table 3. Ordering information

Type number Package

BUK764R0-75C D2PAK plastic single-ended surface-mounted package (D2PAK);

Product data sheet Rev. 2 — 26 April 2011 2 of 13

Name Description Version

SOT404

3 leads (one lead cropped)

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NXP Semiconductors

4. Limiting values

BUK764R0-75C

N-channel TrenchMOS standard level FET

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

DGR

tot

stg

Source-drain diode

Avalanche ruggedness

DS(AL)S

DS(AL)R

drain-source voltage Tj≥ 25 °C; Tj≤ 175 °C - 75 V drain-gate voltage RGS=20kΩ -75V gate-source voltage -20 20 V drain current Tmb=25°C; VGS=10V; see Figure 1;

see Figure 4

=100°C; VGS= 10 V; see Figure 1

peak drain current Tmb= 25 °C; pulsed; tp≤ 10 µs;

[1][2]

- 100 A

[1][3]

- 199 A

[1][2]

- 100 A

- 797 A

see Figure 4 total power dissipation Tmb=25°C; see Figure 2 - 333 W storage temperature -55 175 °C junction temperature -55 175 °C

source current Tmb=25°C

[3][1]

- 199 A

[3][2]

- 100 A

peak source current pulsed; tp≤ 10 µs; Tmb= 25 °C - 797 A

non-repetitive drain-source avalanche energy

repetitive drain-source avalanche energy

ID=100A; V

VGS=10V; T

see Figure 3

≤ 75 V; RGS=50Ω;

sup

= 25 °C; unclamped

j(init)

- 630 mJ

[4][5]

--J

[6][7]

[1] Refer to document 9397 750 12572 for further information. [2] Continuous current is limited by package. [3] Current is limited by power dissipation chip rating. [4] Maximum value not quoted. Repetitive rating defined in avalanche rating figure. [5] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [6] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [7] Refer to application note AN10273 for further information.

Product data sheet Rev. 2 — 26 April 2011 3 of 13

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NXP Semiconductors

03aa16

BUK764R0-75C

N-channel TrenchMOS standard level FET

200

003aab492

(A)

150

100

(1)

0 50 100 150 200

(°C)

Fig 1. Normalized continuous drain current as a

function of mounting base temperature

120

der

(%)

0 20015050 100

Tmb (°C)

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

003aab385

(A)

-3

-2

(1)

(2)

(3)

-1

1 10

(ms)

Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time.

Product data sheet Rev. 2 — 26 April 2011 4 of 13

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NXP Semiconductors

BUK764R0-75C

N-channel TrenchMOS standard level FET

(A)

Limit R

-1

= VDS / I

DSon

(1)

100 μs

1 ms

10 ms

100 ms

1 10 10

VDS (V)

003aab393

tp = 10 μs

Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-mb)

thermal resistance from junction to mounting base

th(j-a)

thermal resistance from junction to ambient

--0.45K/W

minimum footprint

[1]

-50-K/W

[1] Mounted on a printed-circuit board; vertical in still air.

Product data sheet Rev. 2 — 26 April 2011 5 of 13

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NXP Semiconductors

6. Characteristics

BUK764R0-75C

N-channel TrenchMOS standard level FET

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

(BR)DSS

GS(th)

GSth

drain-source breakdown voltage

gate-source threshold voltage

ID=250µA; VGS=0V; Tj= -55 °C 70 - - V

=250µA; VGS=0V; Tj=25°C 75--V

ID=1mA; VDS=VGS; Tj=25°C;

234V

see Figure 5; see Figure 6 ID=1mA; VDS=VGS; Tj= 175 °C;

see Figure 5 I

=1mA; VDS=VGS; Tj=-55°C;

; see Figure 6

1--V

--4.4V

see Figure 5; see Figure 6

DSS

GSS

DSS

DSon

drain leakage current VDS=75V; VGS=0V; Tj= 25 °C - 0.02 1 µA gate leakage current VGS=20V; VDS=0V; Tj= 25 °C - 2 100 nA

=-20V; VDS=0V; Tj= 25 °C - 2 100 nA

drain-source on-state resistance

VGS=10V; ID=25A; Tj= 175 °C; see Figure 7; see Figure 8

=10V; ID=25A; Tj=25°C;

see Figure 7

; see Figure 8

--8.4mΩ

-3.44mΩ

drain leakage current VDS=75V; VGS=0V; Tj= 175 °C - - 500 µA

Dynamic characteristi cs

Q Q Q V

G(tot) GS GD

GS(pl)

total gate charge ID=25A; VDS=60V; VGS=10V; gate-source charge - 36 - nC

see Figure 9

gate-drain charge - 67 - nC gate-source plateau

ID=25A; VDS=60V; see Figure 9 -5-V

- 142 - nC

voltage

iss

oss

rss

input capacitance VGS=0V; VDS=25V; f=1MHz;

=25°C; see Figure 10

output capacitance - 923 1108 pF

reverse transfer

- 8744 11659 pF

- 579 793 pF

capacitance

d(on)

d(off)

turn-on delay time VDS=30V; RL=1.2Ω; VGS=10V;

=10Ω

rise time - 133 - ns

G(ext)

turn-off delay time - 146 - ns fall time -119-ns internal drain

inductance internal source

inductance

from upper edge of drain mounting base to centre of die

from source lead to source bonding pad

-65-ns

-2.5-nH

-7.5-nH

Source-drain diode

source-drain voltage IS=25A; VGS=0V; Tj=25°C;

- 0.85 1.2 V

see Figure 11

reverse recovery time IS=20A; dIS/dt = -100 A/µs; VGS=0V; recovered charge - 155 - nC

VDS=25V

-83-ns

Product data sheet Rev. 2 — 26 April 2011 6 of 13

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NXP Semiconductors

BUK764R0-75C

N-channel TrenchMOS standard level FET

GS(th)

(V)

−60 180120060

max

typ

min

03aa32

Tj (°C)

Fig 5. Gate-source threshold voltage as a function of

junction temperature

003aab386

DSon

(mΩ)

−1

(A)

−2

−3

−4

−5

−6

0642

min typ max

03aa35

VGS (V)

Fig 6. Sub-threshold drain current as a function of

gate-source voltage

2.4

1.8

03aa28

5101520

(V)

Fig 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

1.2

0.6

−60 180120060 Tj (°C)

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature

Product data sheet Rev. 2 — 26 April 2011 7 of 13

Page 8

NXP Semiconductors

BUK764R0-75C

N-channel TrenchMOS standard level FET

(V)

0 50 100 150 200

VDS = 14 V

003aab383

VDS = 60 V

(nC)

Fig 9. Gate-source voltage as a function of gate

charge; typical values

250

(A)

200

16000

(pF)

12000

8000

4000

iss

oss

rss

-1

1 10 10

003aab381

VDS (V)

Fig 10. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical values

003aab384

150

100

0 0.5 1 1.5 2

Tj = 175 °C

Tj = 25 °C

(V)

Fig 11. Source current as a function of source-drain diode; typical values

Product data sheet Rev. 2 — 26 April 2011 8 of 13

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NXP Semiconductors

7. Package outline

BUK764R0-75C

N-channel TrenchMOS standard level FET

Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)

mounting

base

SOT40

e e

DIMENSIONS (mm are the original dimensions)

0.64

0.46

max.

UNIT

4.50

4.10

OUTLINE VERSION

SOT404

1.40

1.27

0.85

0.60

IEC JEDEC JEITA

Fig 12. Package outline SOT404 (D2PAK)

1.60

10.30

1.20

9.70

REFERENCES

0 2.5 5 mm

scale

eLpH

2.90

2.54

2.10

15.80

14.80

2.60

2.20

EUROPEAN

PROJECTION

ISSUE DATE

05-02-11 06-03-16

Product data sheet Rev. 2 — 26 April 2011 9 of 13

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NXP Semiconductors

8. Revision history

BUK764R0-75C

N-channel TrenchMOS standard level FET

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BUK764R0-75C v.2 20110426 Product data sheet - BUK764R0-75C_1 Modifications:

• The format of this data sheet has been redesigned to comply with the new identity guidelines

of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

BUK764R0-75C_1 20060817 Product specification - -

Product data sheet Rev. 2 — 26 April 2011 10 of 13

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NXP Semiconductors

BUK764R0-75C

N-channel TrenchMOS standard level FET

9. Legal information

9.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document cont ains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The pr oduct status of device(s) describ ed in this document may have changed since this document was publish ed and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

[1] [2]

Product status

[3]

Definition

9.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including withou t limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied pri or to the publication hereof.

Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. The product is not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the

Product data sheet Rev. 2 — 26 April 2011 11 of 13

Page 12

NXP Semiconductors

BUK764R0-75C

N-channel TrenchMOS standard level FET

Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpret ed or construed as an offer to sell products that is open f or acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

, unless otherwise

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

9.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

10. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Product data sheet Rev. 2 — 26 April 2011 12 of 13

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NXP Semiconductors

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .11

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

10 Contact information. . . . . . . . . . . . . . . . . . . . . .12

BUK764R0-75C

N-channel TrenchMOS standard level FET

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 26 April 2011

Document identifier: BUK764R0-75C