Philips buk7619-100b Datasheet

BUK7619-100B

N-channel TrenchMOS standard level FET

Rev. 01 — 10 October 2007 Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP High Performance Automotive (HPA) TrenchMOS technology.

1.2 Features

n TrenchMOS technology n Q101 compliant
n 175 °C rated n Standard level compatible

1.3 Applications

n Automotive systems n General purpose power switching
n Motors, lamps and solenoids n 12 V, 24 V and 42 V loads.

1.4 Quick reference data

n E

DS(AL)S

n ID≤ 64 A n P

≤ 222 mJ n R

=17mΩ (typ)

DSon

≤ 200 W

tot

2. Pinning information

Table 1. Pinning

Pin Description Simplified outline Symbol

1 gate (G)
2 drain (D)
3 source (S)
mb mounting base; connected to drain (D)

SOT404 (D2PAK)

mb

2

13

G

mbb076

D

S

NXP Semiconductors

BUK7619-100B

N-channel TrenchMOS standard level FET

3. Ordering information

Table 2. Ordering information

Type number Package

Name Description Version

BUK7619-100B D2PAK plastic single-ended surface-mounted package (D2PAK); 3-leads (one

SOT404

lead cropped)

4. Limiting values

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

DR

I

DRM

Avalanche ruggedness

E

DS(AL)S

E

DS(AL)R

drain-source voltage - 100 V
drain-gate voltage (DC) RGS=20kΩ - 100 V
gate-source voltage - ±20 V
drain current Tsp=25°C; VGS= 10 V; see Figure 2 and 3 -64A

= 100 °C; VGS= 10 V; see Figure 2 -45A

T

sp

peak drain current Tmb=25°C; pulsed; tp≤ 10 µs; see Figure 3 - 256 A
total power dissipation Tmb=25°C; see Figure 1 - 200 W
storage temperature −55 +175 °C
junction temperature −55 +175 °C

reverse drain current Tmb=25°C - 64 A
peak reverse drain current Tmb=25°C; pulsed; tp≤ 10 µs - 256 A

non-repetitive drain-source avalanche
energy

repetitive drain-source avalanche

unclamped inductive load; ID=64A;
V

≤ 100 V; RGS=50Ω; VGS= 10 V; starting

DS

at T

=25°C

j

- 222 mJ

[1]

-- mJ

energy

[1] Conditions:

a) Maximum value not quoted. Repetitive rating defined inFigure 16.
b) Single-pulse avalanche rating limited by T
c) Repetitive avalanche rating limited by an average junction temperature of 170 °C.
d) Refer to application note

BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 10 October 2007 2 of 12

AN10273

for further information.

j(max)

of 175 °C.

NXP Semiconductors

BUK7619-100B

N-channel TrenchMOS standard level FET

120

P

der

(%)

80

40

0

0 20015050 100

P

der

----------------------- -

P

tot 25°C()

P

tot

100 %×=

03na19

Tmb (°C)

Fig 1. Normalized total power dissipation as a

function of mounting base temperature

3

10

(A)

10

I

D

2

Limit R

DSon

= V

/ I

DS

D

80
I

D

(A)

60

40

20

0

0 50 100 150 200

003aab142

(°C)

T

mb

VGS≥ 10 V

Fig 2. Continuous drain current as a function of

mounting base temperature

003aab143

tp = 10 µs

100 µs

10

DC

1

-1

10

1 10 10

1 ms
10 ms

100 ms

2

VDS (V)

Tmb=25°C; IDM is single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

10

3

BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 10 October 2007 3 of 12

NXP Semiconductors

BUK7619-100B

N-channel TrenchMOS standard level FET

5. Thermal characteristics

Table 4. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-mb)

R

th(j-a)

thermal resistance from junction
to mounting base

thermal resistance from junction
to ambient

mounted on a printed-circuit board;
minimum footprint

- - 0.74 K/W

- 50 - K/W

003aab144

δ =

t

p

T

t

(s)

p

Z

th (j-mb )

(K/W)

1

10

10

10

-1

-2

-3

10

δ = 0.5

0.2

0.1

0.05

0.02

single shot

-6

P

-5

10

-4

10

-3

10

-2

10

-1

10

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

t

p

T

t

1

BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 10 October 2007 4 of 12

NXP Semiconductors

BUK7619-100B

N-channel TrenchMOS standard level FET

6. Characteristics

Table 5. Characteristics

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DSon

Dynamic characteristics

Q

G(tot)

Q

GS

Q

GD

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Source-drain diode

V

SD

t

rr

Q

r

drain-source breakdown voltage ID= 250 µA; VGS=0V

=25°C 100 - - V

T

j

= −55 °C 89--V

T

j

gate-source threshold voltage ID= 1 mA; VDS=VGS; see Figure 9 and10

=25°C 234V

T

j

= 175 °C 1--V

T

j

= −55 °C - - 4.4 V

T

j

drain leakage current VDS= 100 V; VGS=0V

=25°C - 0.02 1 µA

T

j

= 175 °C - - 500 µA

T

j

gate leakage current VGS= ±20 V; VDS= 0 V - 2 100 nA
drain-source on-state resistance VGS= 10 V; ID= 25 A; see Figure 7 and 8

=25°C - 17 19 mΩ

T

j

= 175 °C --49mΩ

T

j

total gate charge ID= 25 A; VDD=80V; VGS=10V;

see

gate-source charge - 11 - nC

Figure 14

-53-nC

gate-drain charge - 27 - nC
input capacitance VGS=0V; VDS= 25 V; f = 1 MHz;

see

output capacitance - 340 480 pF

Figure 12

- 2555 3400 pF

reverse transfer capacitance - 84 115 pF
turn-on delay time VDS=30V; RL= 1.2 Ω;

V

=10V;RG=10Ω

rise time -45-ns

GS

-19-ns

turn-off delay time - 85 - ns
fall time -34-ns

source-drain voltage IS= 25 A; VGS= 0 V; see Figure 15 - 0.85 1.2 V
reverse recovery time IS= 20 A; dIS/dt = −100 A/µs;

V

=0V;VR=30V

recovered charge - 130 - nC

GS

- 116 - ns

BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 10 October 2007 5 of 12

NXP Semiconductors

BUK7619-100B

N-channel TrenchMOS standard level FET

200

I

D

(A)

150

100

50

0

0246810

10

003aac043

VGS (V) = 20V

15

8

7

6

5.5

5

4.5

V

(V)

DS

Tj=25°CT

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

003aac045

10
20

R

DSon

(mΩ)

50

40

30

20

65.5 6.5 8

VGS (V) = 5

30

R

DSon

(mΩ)

25

20

15

10

0 5 10 15 20

=25°C; ID=10A

j

003aac044

(V)

V

GS

Fig 6. Drain-source on-state resistance as a function

of gate-source voltage; typical values

2.8

a

2.1

1.4

03ng41

10

0

0 40 80 120 160 200

(A)

I

D

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values

BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.

0.7

0

-60 0 60 120 180

R

DSon

=

a

----------------------------- -

R

DSon 25°C()

T

(°C)

j

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature

Product data sheet Rev. 01 — 10 October 2007 6 of 12

NXP Semiconductors

BUK7619-100B

N-channel TrenchMOS standard level FET

5

V

GS(th)

(V)

4

3

2

1

0

−60 180120060

ID= 1 mA; VDS=V

GS

max

typ

min

03aa32

Tj (°C)

Fig 9. Gate-source threshold voltage as a function of

junction temperature

003aac039

g

(S)

80

fs

60

−1

10

I

D

(A)

−2

10

−3

10

−4

10

−5

10

−6

10

0642

Tj=25°C; VDS=V

min typ max

GS

03aa35

VGS (V)

Fig 10. Sub-threshold drain current as a function of

gate-source voltage

003aac038

C

(pF)

4000

3000

C

iss

40

20

0

0204060

(A)

I

D

Tj=25°C; VDS=25V VGS= 0 V; f = 1 MHz

Fig 11. Forward transconductance as a function of

drain current; typical values

2000

C

1000

0

-1

10

1 10 10

oss

C

rss

VDS (V)

2

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical
values

BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 10 October 2007 7 of 12

NXP Semiconductors

BUK7619-100B

N-channel TrenchMOS standard level FET

100

I

D

(A)

80

60

40

20

0

0246

Tj = 175 °C

003aac040

Tj = 25 °C

(V)

V

GS

VDS = 25 V Tj=25°C; ID=25A

Fig 13. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

003aac042

(A)

100

I

S

75

V

DS

Q

003aac041

(V) = 80

(nC)

G

10

V

GS

(V)

8

6

4

2

0

0204060

VDS (V) = 14

Fig 14. Gate-source voltage as a function of gate

charge; typical values

10

I

(A)

2

(1)

AL

003aab145

50

25

0

0.0 0.5 1.0 1.5

Tj = 175 °C

Tj = 25 °C

(V)

V

SD

VGS= 0 V See Table note1 of Table3 Limiting values.

Fig 15. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical
values

10

1

-3

10

-2

10

(2)

(3)

-1

10

1 10

t

(ms)

AL

(1) Single-pulse; Tj=25°C.
(2) Single-pulse; Tj= 125 °C.
(3) Repetitive.

Fig 16. Single-pulse and repetitive avalanche rating;

avalanche current as a function of avalanche
time

BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 10 October 2007 8 of 12

NXP Semiconductors

7. Package outline

BUK7619-100B

N-channel TrenchMOS standard level FET

Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)

E

D

1

D

H

D

mounting

base

2

L

13

SOT404

A

A

1

p

e e

DIMENSIONS (mm are the original dimensions)

0.64

0.46

D

max.

11

UNIT

mm

A

4.50

4.10

OUTLINE
VERSION

SOT404

A

1.40

1.27

b

1

0.85

0.60

IEC JEDEC JEITA

Fig 17. Package outline SOT404 (D2PAK)

D

1

1.60

10.30

1.20

9.70

REFERENCES

b

0 2.5 5 mm

scale

E

eLpH

2.90

2.54

2.10

D

15.80

14.80

Qc

2.60

2.20

c

Q

EUROPEAN

PROJECTION

ISSUE DATE

05-02-11
06-03-16

BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 10 October 2007 9 of 12

NXP Semiconductors

8. Soldering

2.25

2.15

1.50

BUK7619-100B

N-channel TrenchMOS standard level FET

10.85

10.60

10.50

7.50

7.40

1.70

8.15

7.95

8.35

4.85

1.50

4.60

0.30

3.00

solder lands

solder resist

occupied area

solder paste

5.08

1.20

1.30

1.55

8.275

5.40

8.075

0.20

msd057

Fig 18. Reflow soldering footprint for SOT404

9. Revision history

Table 6. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BUK7619-100B_1 20071010 Product data sheet - -

BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 10 October 2007 10 of 12

NXP Semiconductors

10. Legal information

10.1 Data sheet status

BUK7619-100B

N-channel TrenchMOS standard level FET

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document mayhave changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

10.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall haveno liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. Ashort data sheet is intended
for quick reference only and should not be relied upon tocontain detailedand
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

10.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or
warranties, expressedor implied,as to theaccuracy or completenessof such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces allinformation suppliedprior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductorsproduct can reasonably be expected to

[3]

http://www.nxp.com.

Definition

result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134)may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

10.4 Trademarks

Notice: All referencedbrands, product names, service names and trademarks
are the property of their respective owners.

TrenchMOS —is a trademark of NXP B.V.

11. Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]

BUK7619-100B_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 10 October 2007 11 of 12

NXP Semiconductors

12. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

10.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11 Contact information. . . . . . . . . . . . . . . . . . . . . 11

12 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

BUK7619-100B

N-channel TrenchMOS standard level FET

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2007. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 10 October 2007

Document identifier: BUK7619-100B_1