Philips buk7610-55al Datasheet

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BUK7610-55AL

N-channel TrenchMOS standard level FET

Rev. 02 — 9 January 2008 Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appro priate AEC standard for use in automotive critical applications.

1.2 Features

 175 °C rated  Q101 compliant  Stable operation in linear mode  TrenchMOS technology

1.3 Applications

 12 V and 24 V loads  Automotive systems  DC linear motor control  Repetitive clamped inductive switching

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

drain current VGS=10V; Tmb=25°C;

see Figure 4 and 1

tot

total power dissipation Tmb=25°C; see Figure 2 - - 300 W

Avalanche ruggedness

DS(AL)S

non-repetitive drain-source avalanche energy

ID=75A; V R

j(init)

inductive load

Static characteristics

DSon

drain-source on-state resistance

VGS=10V; ID=25A;

=25°C; see Figure 12 and

[1] Continuous current is limited by package.

≤ 55 V;

sup

=50Ω; VGS=10V;

=25°C; unclamped

[1]

--75A

--1.1J

-8.510mΩ

Page 2

NXP Semiconductors

2. Pinning information

BUK7610-55AL

N-channel TrenchMOS standard level FET

Table 2. Pinning

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

2 D drain 3 S source

mb D mounting base;

connected to drain

bb076

SOT404 (D2PAK)

3. Ordering information

Table 3. Ordering information

Type number Package

BUK7610-55AL D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead

Name Description Version

SOT404

cropped)

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V V V I

I P T T

DS DGR GS

tot stg j

drain-source voltage Tj≥ 25 °C; Tj≤ 175 °C-55V drain-gate voltage RGS=20kΩ -55V gate-source voltage -20 20 V drain current Tmb=25°C; VGS= 10 V; see Figure 4 and 1

peak drain current Tmb=25°C; tp≤ 10 μs; pulsed - 490 A total power dissipation Tmb=25°C; see Figure 2 - 300 W storage temperature -55 175 °C junction temperature -55 175 °C

Avalanche ruggedness

DS(AL)S

non-repetitive drain-source avalanche energy

DS(AL)R

repetitive drain-source avalanche energy

Source-drain diode

Product data sheet Rev. 02 — 9 January 2008 2 of 13

source current Tmb=25°C

peak source current tp≤ 10 μs; pulsed; Tmb=25°C - 490 A

[1][2]

- 122 A

=25°C; VGS= 10 V; see Figure 4 and 1

= 100 °C; VGS= 10 V; see Figure 4

ID=75A; V

=10V; T

≤ 55 V; RGS=50Ω;

sup

=25°C; unclamped

j(init)

[3]

-75A

[3]

-75A

-1.1J

inductive load see Figure 3

=25°C

[4][5]

--J

[6]

[1][2]

- 122 A

[3]

-75A

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NXP Semiconductors

der

tot

tot(25°C

)

× 100 %

[1] Current is limited by power dissipation chip rating. [2] Refer to document 9397 750 12572 for further information. [3] Continuous current is limited by package. [4] Single shot avalanche rating limited by maximum junction temperature of 175 °C. [5] Repetitive avalanche rating limited by average junction temperature of 170 °C. [6] Refer to application note AN10273 for further information.

150

003aaa726

120

BUK7610-55AL

N-channel TrenchMOS standard level FET

03aa16

(A)

100

(1)

0 50 100 150 200

(°C)

VGS 10V

(1) Cappedat 75 A due to package.

Fig 1. Continuous drain current as a function of

mounting base temperature

(A)

der

(%)

0 50 100 150 200

Fig 2. Normalized total power di ss ipation as a

function of mounting base temperature

(1)

(2)

003aaa739

Tj = 25 ˚C

(°C)

(3)

150 ˚C

-1

-2

-1

1 10

(ms)

(1) Singleíshot. (2) Singleíshot. (3) Repetitive.

Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period

Product data sheet Rev. 02 — 9 January 2008 3 of 13

Page 4

NXP Semiconductors

BUK7610-55AL

N-channel TrenchMOS standard level FET

(A)

1 10 10

Limit R

DSon

(1)

= V

/ I

VDS (V)

tp = 10 μs

100 μs

1 ms

10 ms

100 ms

Tmb=25°C; IDMis singlepulse

(1) Cappedat 75 A due to package.

Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

5. Thermal characteristics

003aaa737

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-a)

th(j-mb)

thermal resistance from junction to ambient

thermal resistance

mounted on a printed-circuit

-50-K/W board; minimum footprint; vertical in still air

see Figure 5 -0.250.5K/W

from junction to mounting base

Product data sheet Rev. 02 — 9 January 2008 4 of 13

Page 5

NXP Semiconductors

th(j-mb )

δ = 0.5

(K/W)

0.2

-1

0.1

0.05

0.02

-2

BUK7610-55AL

N-channel TrenchMOS standard level FET

003aaa734

δ =

-3

single shot

-6

-5

-4

-3

-2

-1

(s)

Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

(BR)DSS

drain-source breakdown voltage

GS(th)

gate-source threshold voltage

DSS

GSS

DSon

drain leakage current VDS=55V; VGS=0V;

gate leakage current VDS=0V; VGS=+20V;

drain-source on-state resistance

ID=250μA; VGS=0V;

=-55°C

=250μA; VGS=0V;

=25°C

ID=1mA; VDS = VGS; Tj=25°C; see Figure 10

=1mA; VDS = VGS;

and 11

50 - - V

55 - - V

234V

1- -V Tj= 175 °C; see Figure 10 and

=1mA; VDS = VGS;

=-55°C; see Figure 10 and 11

--4.4V

--500μA

Tj= 175 °C

=55V; VGS=0V; Tj=25°C - 0.05 10 μA

-2100nA

Tj=25°C

=0V; VGS=-20V;

=25°C

VGS=10V; ID=25A;

-2100nA

--20mΩ Tj= 175 °C; see Figure 12 and

=10V; ID=25A; Tj=25°C;

see Figure 12

and 13

-8.510mΩ

Product data sheet Rev. 02 — 9 January 2008 5 of 13

Page 6

NXP Semiconductors

BUK7610-55AL

N-channel TrenchMOS standard level FET

Table 6. Characteristics

…continued

Symbol Parameter Conditions Min Typ Max Unit

Source-drain diode

source-drain voltage IS=25A; VGS=0V; Tj=25°C;

-0.851.2V see Figure 16

reverse recovery time IS=20A; dIS/dt = -100 A/μs;

=0V; VDS=30V; Tj=25°C

recovered charge IS=20A; dIS/dt = -100 A/μs;

-73-ns

-430-nC VGS=0V; VDS=30V; Tj=25°C

Dynamic characteristi cs

G(tot)

total gate charge ID=25A; VDS=44V;

=10V; Tj=25°C;

-124-nC see Figure 14

gate-source charge ID=25A; VDS=44V;

-22-nC VGS=10V; Tj=25°C; see Figure 14

gate-drain charge ID=25A; VDS=44V;

-50-nC VGS=10V; Tj=25°C; see Figure 14

GS(pl)

iss

gate-source plateau voltage

input capacitance VGS=0V; VDS=25V;

ID=25A; VDS=44V; Tj=25°C; see Figure 14

-5-V

- 4710 6280 pF f=1MHz; Tj=25°C; see Figure 15

oss

output capacitance VGS=0V; VDS=25V;

f=1MHz; T

=25°C;

- 980 1180 pF see Figure 15

rss

reverse transfer capacitance

VGS=0V; VDS=25V; f=1MHz; T

=25°C;

- 560 770 pF see Figure 15

d(on)

turn-on delay time VDS=30V; RL=1.2Ω;

VGS=10V; R

=25°C

G(ext)

=10Ω;

rise time VDS=30V; RL=1.2Ω;

VGS=10V; R

G(ext)

=10Ω;

-33-ns

-117-ns Tj=25°C

d(off)

turn-off delay time VDS=30V; RL=1.2Ω;

=10V; R

G(ext)

=10Ω;

-132-ns Tj=25°C

fall time VDS=30V; RL=1.2Ω;

internal drain inductance

VGS=10V; R

=25°C

from upper edge of drain mounting base to center of die;

G(ext)

=10Ω;

-95-ns

-2.5-nH Tj=25°C

internal source inductance

from source lead to source bond

=25°C

pad; T

-7.5-nH

Product data sheet Rev. 02 — 9 January 2008 6 of 13

Page 7

NXP Semiconductors

=25°C

=25V

BUK7610-55AL

N-channel TrenchMOS standard level FET

400

(A)

20 18

300

16 14 12

200

100

0246810

VGS (V) = 10

9.5 9

8.5 8

7.5 7

6.5 6

5.5 5

4.5

003aaa729

(V)

Tj=25°C

Fig 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

003aaa732

(S)

(V) = 20

003aaa731

(A)

DSon

(mΩ)

0 100 200 300 400

10987

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values

150

(A)

100

003aaa733

0 20406080

(A)

Tj = 175 °C

0246810

Tj = 25 °C

(V)

Tj=25°C; VDS=25V

Fig 8. Forward transconductance as a function of

drain current; typical values

Fig 9. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Product data sheet Rev. 02 — 9 January 2008 7 of 13

Page 8

NXP Semiconductors

=25°C; VDS=V

a =

DSon

DSon(25°C

)

BUK7610-55AL

N-channel TrenchMOS standard level FET

GS(th)

(V)

−60 180120060

ID=1mA;VDS=V

max

typ

min

03aa32

Tj (°C)

Fig 10. Gate-source threshold volt ag e as a function of

junction temperature

003aaa730

−1

(A)

−2

−3

−4

−5

−6

0642

min typ max

03aa35

VGS (V)

Fig 11. Sub-threshold drain current as a function of

gate-source volt age

03ne89

DSon

(mΩ)

5 101520

(V)

Tj=25°C; ID=25A

Fig 12. Drain-source on-state resistance as a function

of gate-source voltage; typical values

1.5

0.5

-60 0 60 120 180 T

(°C)

Fig 13. Normalized drain-source on-state resistance

factor as a function of junction temperature

Product data sheet Rev. 02 — 9 January 2008 8 of 13

Page 9

NXP Semiconductors

=0V; f =1MHz

BUK7610-55AL

N-channel TrenchMOS standard level FET

(V)

VDS = 14 V

0 50 100 150

003aaa735

VDS = 44 V

(nC)

Tj=25°C; ID=25A

Fig 14. Gate-source voltage as a function of gate

charge; typical values

150

8000

(pF)

6000

4000

2000

iss

oss

rss

-1

1 10 10

003aaa738

VDS (V)

Fig 15. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical values

003aaa736

(A)

100

Tj = 25 °C

Tj = 175 °C

0.0 0.3 0.6 0.9 1.2 (V)

VGS=0V

Fig 16. Source current as a function of source-d rain voltage; typical values

Product data sheet Rev. 02 — 9 January 2008 9 of 13

Page 10

NXP Semiconductors

N-channel TrenchMOS standard level FET

7. Package outline

Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)

BUK7610-55AL

SOT404

mounting

base

e e

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

4.50

4.10

OUTLINE VERSION

SOT404

1.40

1.27

0.64

0.46

max.

0.85

0.60

IEC JEDEC JEITA

1.60

10.30

1.20

9.70

REFERENCES

eLpH

2.90

2.54

2.10

15.80

14.80

2.60

2.20

EUROPEAN

PROJECTION

ISSUE DATE

05-02-11 06-03-16

Fig 17. Package outlin e SOT404 (D2PAK)

Product data sheet Rev. 02 — 9 January 2008 10 of 13

Page 11

NXP Semiconductors

N-channel TrenchMOS standard level FET

BUK7610-55AL

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BUK7610-55AL_2 20080109 Product data sheet - BUK75_7610_55AL_1 Modifications:

BUK75_7610_55AL_1 20041022 Product data sheet - -

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Typical thermal resistance (j-mb) figure added in Table 5.

Product data sheet Rev. 02 — 9 January 2008 11 of 13

Page 12

NXP Semiconductors

BUK7610-55AL

N-channel TrenchMOS standard level FET

9. Legal information

9.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

9.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconduct ors does not give any repr esentatio ns or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected t o

result in personal injury , death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

, including those pertaining to warranty,

9.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

TrenchMOS — is a trademark of NXP B.V.

10. Contact information

For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected]

Product data sheet Rev. 02 — 9 January 2008 12 of 13

Page 13

NXP Semiconductors

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

10 Contact information. . . . . . . . . . . . . . . . . . . . . 12

11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

BUK7610-55AL

N-channel TrenchMOS standard level FET

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 9 January 2008

Document identifier: BUK7610-55AL_2