Philips buk7540-100a Datasheet

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Page 1

BUK7540-100A

TO-220AB

N-channel TrenchMOS standard level FET

Rev. 2 — 20 April 2011 Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 AEC Q101 compliant  Low conduction losses due to low

1.3 Applications

on-state resistance

 Automotive and general purpose

power switching

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

tot

Static characteristics

DSon

Avalanche ruggedness

DS(AL)S

drain-source voltage Tj≥ 25 °C; Tj≤ 175 °C - - 100 V drain current Tmb=25°C --37A total power dissipation - - 138 W

drain-source on-state resistance

non-repetitive drain-source avalanche energy

VGS=10V; ID=40A; Tj=25°C

ID=26A; V

=50Ω; VGS=5V;

= 25 °C; unclamped

j(init)

sup

≤ 25 V;

- 3040mΩ

--31mJ

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NXP Semiconductors

2. Pinning information

BUK7540-100A

N-channel TrenchMOS standard level FET

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate 2 D drain 3Ssource mb D mounting base;

connected to drain

12mb3

SOT78A (TO-220AB)

3. Ordering information

Table 3. Ordering information

Type number Package

BUK7540-100A TO-220AB plastic single-ended package; heatsink mounted;

Name Description Version

1 mounting hole; 3-lead TO-220AB

bb076

SOT78A

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

DGR

tot

stg

Source-drain diode

Avalanche ruggedness

DS(AL)S

drain-source voltage Tj≥ 25 °C; Tj≤ 175 °C - 100 V drain-gate voltage RGS=20kΩ - 100 V gate-source voltage -20 20 V drain current Tmb=100°C - 26 A

peak drain current Tmb= 25 °C; pulsed - 149 A total power dissipation Tmb= 25 °C - 138 W storage temperature -55 175 °C junction temperature -55 175 °C

source current Tmb=25°C - 37 A peak source current pulsed; Tmb= 25 °C - 149 A

non-repetitive drain-source avalanche energy

=25°C - 37 A

ID=26A; V VGS=5V; T

≤ 25 V; RGS=50Ω;

sup

= 25 °C; unclamped

j(init)

-31mJ

Product data sheet Rev. 2 — 20 April 2011 2 of 12

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NXP Semiconductors

003aaf471

003aaf472

BUK7540-100A

N-channel TrenchMOS standard level FET

100

der

(%)

0 20015050 100

(°C)

Fig 1. Normalized total power dissipation as a

function of mounting base temperature

tp = 1 μs

10 μs

100 μs

1 ms

10 ms

100 ms

VDS (V)

003aaf473

(A)

= V

DS(on)

110

= 25 °C; IDM is single pulse

D.C.

/ I

Fig 3. Safe operating area; continuous and peak drain

currents as a function of drain-source voltage

100

(%)

0 20015050 100

(°C)

VGS ≥ 10 V

Fig 2. Normalized continuous drain current as a

function of mounting base temperature

100

DSS

(%)

20 18014060 100

= 75 A

003aaf486

(°C)

Fig 4. Normalised drain-source non-repetitive

avalanche energy as a function of mounting-base temperature

Product data sheet Rev. 2 — 20 April 2011 3 of 12

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NXP Semiconductors

BUK7540-100A

N-channel TrenchMOS standard level FET

(A)

Tj prior to avalanche = 150 °C

−3

−2

−1

003aaf487

25 °C

tAV (ms)

10110

unclamped inductive load

Fig 5. Single-shot avalanche rating; avalanche current as a function of avalanche period

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-mb)

thermal resistance from junction to mounting base

th(j-a)

thermal resistance from junction to ambient

--1.1K/W

in free air - 60 - K/W

003aaf474

δ =

tp (s)

1010

−1

th(j-mb)

(K/W)

δ = 0.5

0.2

−1

0.1

0.05

0.02

−2

−3

−7

−5

−3

Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration

Product data sheet Rev. 2 — 20 April 2011 4 of 12

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NXP Semiconductors

6. Characteristics

BUK7540-100A

N-channel TrenchMOS standard level FET

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

(BR)DSS

GS(th)

DSS

GSS

DSon

drain-source breakdown voltage

gate-source threshold voltage

drain leakage current VDS=100V; VGS=0V; Tj= 175 °C - - 500 µA

gate leakage current VGS=20V; VDS=0V; Tj= 25 °C - 2 100 nA

drain-source on-state resistance

ID=0.25mA; VGS=0V; Tj= 25 °C 100 - - V

=0.25mA; VGS=0V; Tj= -55 °C 89 - - V

ID=1mA; VDS=VGS; Tj=25°C 234V

=1mA; VDS=VGS; Tj=-55°C --4.4V

=1mA; VDS=VGS; Tj= 175 °C 1 - - V

=100V; VGS=0V; Tj= 25 °C - 0.05 10 µA

=-20V; VDS=0V; Tj= 25 °C - 2 100 nA

VGS=10V; ID=40A; Tj= 25 °C - 30 40 mΩ

=10V; ID=40A; Tj= 175 °C - - 108 mΩ

Dynamic characteristi cs

iss

oss

rss

input capacitance VGS=0V; VDS=25V; f=1MHz; output capacitance - 216 259 pF

Tj=25°C

reverse transfer

- 1720 2293 pF

- 133 182 pF

capacitance

d(on)

d(off)

turn-on delay time VDS=30V; RL=1.2Ω; VGS=5V;

=10Ω; Tj=25°C

rise time - 55 83 ns

G(ext)

- 1218ns

turn-off delay time - 48 67 ns fall time - 3042ns internal drain

inductance

internal source inductance

measured from contact screw on tab to centre of die; T

=25°C

from drain lead 6 mm from package to centre of die; T

=25°C

from source lead 6 mm from package to source bond pad; T

=25°C

-3.5-nH

-4.5-nH

-7.5-nH

Source-drain diode

source-drain voltage IS=25A; VGS=0V; Tj= 25 °C - 0.85 1.2 V

=37A; VGS=0V; Tj=25°C - 1.1 - V

reverse recovery time IS=37A; dIS/dt = -100 A/µs; recovered charge - 0.24 - µC

VGS=-10V; VDS=30V; Tj=25°C

-70-ns

Product data sheet Rev. 2 — 20 April 2011 5 of 12

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NXP Semiconductors

003aaf478

BUK7540-100A

N-channel TrenchMOS standard level FET

003aaf475

5.4

5.2

4.8

4.6

4.4

(V)

(A)

021.60.8 1.20.4

(V) = 10

Tj = 25 °C Tj = 25 °C

Fig 7. Output characteristics: drain current as a

function of drain-source voltage; typical values

003aaf477

DS(on)

(mΩ)

003aaf476

VGS (V) = 10

(A)

0.1

DS(on)

(Ω)

0.08

0.06

0.04

0.02

0504020 3010

5.45.254.8

Fig 8. Drain-source on-state resistance as a function

of drain current; typical values

(A)

Tj = 25 °C Tj = 175 °C

15423

(V)

Tj = 25 °C; ID = 25 A

Fig 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

(S)

0403010 20

= 25 °C; VDS > ID x R

DSon

003aaf479

(A)

08624

> ID x R

DSon

(V)

Fig 10. Tran sfer characteristics: drain current as a

function of gate-source voltage; typical value s

2.5

1.5

0.5

−100 2001000

003aaf480

Tmb (°C)

Fig 11. Forward transconductance as a function of

drain current; typical values

Fig 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

Product data sheet Rev. 2 — 20 April 2011 6 of 12

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NXP Semiconductors

BUK7540-100A

N-channel TrenchMOS standard level FET

GS(th)

(V)

−100 2001000

ID = 1 mA; VDS = V

maximum

typical

minimum

003aaf481

Tj (°C)

Fig 13. Gate-source threshold voltage as a function of

junction temperature

003aaf483

(nF)

iss

oss

rss

−1

(A)

−2

−3

−4

−5

−6

054231

Tj = 25 °C; VDS = V

003aaf482

98 %typical2 %

VGS (V)

Fig 14. Sub-thr eshold drain current as a function of

gate-source voltage

(V)

003aaf484

VDS = 44 VVDS = 14 V

−2

−1

1010

VDS (V)

= 0 V; f = 1 MHz Tj = 25 °C

Fig 15. In put, output and reverse trans fer capacitances

as a function of drain-source voltage; typical

Fig 16. Gate-source vo ltage as a function of gate

0403010 20

charge; typical values

(nC)

values

(A)

0 1.20.80.4

= 0 V

Tj = 175 °C

003aaf485

Tj = 25 °C

(V)

SDS

Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values

Product data sheet Rev. 2 — 20 April 2011 7 of 12

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NXP Semiconductors

BUK7540-100A

N-channel TrenchMOS standard level FET

7. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

(1)

mounting

base

123

0 5 10 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

4.5

4.1

1.39

1.27

UNIT

Note

1. Terminals in this zone are not tinned.

OUTLINE VERSION

SOT78A SC-463-lead TO-220AB

1.3

1.0

0.7

0.4

0.9

0.6

IEC JEDEC JEITA

15.8

6.4

15.2

5.9

REFERENCES

10.3

9.7

2.54

15.0

13.5

3.30

2.79

max.

3.0

3.8

3.0

3.6

2.7

EUROPEAN

PROJECTION

2.6

2.2

ISSUE DATE

03-01-22 05-03-14

Fig 18. Package outline SOT78A (TO-220AB)

Product data sheet Rev. 2 — 20 April 2011 8 of 12

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NXP Semiconductors

8. Revision history

BUK7540-100A

N-channel TrenchMOS standard level FET

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BUK7540-100A v.2 20110420 Product data sheet - BUK7540-100A_1 Modifications:

• The format of this data sheet has been redesigned to comply with the new identity guidelines

of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

BUK7540-100A_1 19991201 Product specification - -

Product data sheet Rev. 2 — 20 April 2011 9 of 12

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NXP Semiconductors

BUK7540-100A

N-channel TrenchMOS standard level FET

9. Legal information

9.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contai ns the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

[1] [2]

Product status

[3]

Definition

9.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including withou t limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied pri or to the publication hereof.

Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. The product is not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the

Product data sheet Rev. 2 — 20 April 2011 10 of 12

Page 11

NXP Semiconductors

BUK7540-100A

N-channel TrenchMOS standard level FET

Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpret ed or construed as an offer to sell products that is open f or acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

, unless otherwise

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

9.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

10. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Product data sheet Rev. 2 — 20 April 2011 11 of 12

Page 12

NXP Semiconductors

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .9

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .10

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .10

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

10 Contact information. . . . . . . . . . . . . . . . . . . . . .11

BUK7540-100A

N-channel TrenchMOS standard level FET

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 20 April 2011

Document identifier: BUK7540-100A