Philips buk7518-55_2 Datasheet

Philips Semiconductors Product specification

TrenchMOS transistor BUK7518-55
Standard level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using V
’trench’ technology. The device I
featuresverylowon-state resistance P
and has integral zener diodes giving T
ESD protection up to 2kV. It is R

DS

D

tot
j

DS(ON)

intended for use in automotive and resistance VGS = 10 V
general purpose switching
applications.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Drain-source voltage 55 V
Drain current (DC) 57 A
Total power dissipation 125 W
Junction temperature 175 ˚C
Drain-source on-state 18 mΩ

PIN DESCRIPTION

tab

d

1 gate
2 drain
3 source

tab drain

123

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V
I

D

I

D

I

DM

P
T

DS
DGR

tot

stg

GS

, T

j

Drain-source voltage - - 55 V
Drain-gate voltage RGS = 20 kΩ -55V
Gate-source voltage - - 16 V
Drain current (DC) Tmb = 25 ˚C - 57 A
Drain current (DC) Tmb = 100 ˚C - 40 A
Drain current (pulse peak value) Tmb = 25 ˚C - 228 A
Total power dissipation Tmb = 25 ˚C - 125 W
Storage & operating temperature - - 55 175 ˚C

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

C

Electrostatic discharge capacitor Human body model - 2 kV
voltage, all pins (100 pF, 1.5 kΩ)

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-mb

R

th j-a

January 1997 1 Rev 1.000

Thermal resistance junction to - - 1.2 K/W
mounting base
Thermal resistance junction to in free air 60 - K/W
ambient

Philips Semiconductors Product specification

TrenchMOS transistor BUK7518-55

Standard level FET

STATIC CHARACTERISTICS

Tj= 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

GSS

±V
R

DS(ON)

(BR)GSS

Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 55 - - V
voltage Tj = -55˚C 50 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 2.0 3.0 4.0 V

Tj = 175˚C 1.0 - - V

Tj = -55˚C - - 4.4 V

Zero gate voltage drain current VDS = 55 V; VGS = 0 V; - 0.05 10 µA

Tj = 175˚C - - 500 µA

Gate source leakage current VGS = ±10 V; VDS = 0 V - 0.02 1 µA

Tj = 175˚C - - 20 µA
Gate-source breakdown IG = ±1 mA; 16 - - V
voltage
Drain-source on-state VGS = 10 V; ID = 25 A - 15 18 mΩ
resistance Tj = 175˚C - - 38 mΩ

DYNAMIC CHARACTERISTICS

Tmb = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g
C

C
C

t
t
t
t

L

fs

iss
oss
rss

d on
r
d off
f

d

Forward transconductance VDS = 25 V; ID = 25 A 6 30 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1500 2000 pF

Output capacitance - 370 470 pF
Feedback capacitance - 170 250 pF

Turn-on delay time VDD = 30 V; ID = 25 A; - 15 22 ns
Turn-on rise time VGS = 10 V; RG = 10 Ω - 3060ns
Turn-off delay time Resistive load - 35 50 ns
Turn-off fall time - 25 38 ns

Internal drain inductance Measured from contact screw on - 3.5 - nH

tab to centre of die

L

d

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

L

s

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V

t

rr

Q

SD

rr

Continuous reverse drain - - 57 A
current
Pulsed reverse drain current - - 200 A
Diode forward voltage IF = 25 A; VGS = 0 V - 0.95 1.2 V

IF = 50 A; VGS = 0 V - 1.0 - V

Reverse recovery time IF = 50 A; -dIF/dt = 100 A/µs; - 48 - ns
Reverse recovery charge VGS = -10 V; VR = 30 V - 0.1 - µC

January 1997 2 Rev 1.000

Philips Semiconductors Product specification

TrenchMOS transistor BUK7518-55

Standard level FET

AVALANCHE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

Drain-source non-repetitive ID = 50 A; VDD ≤ 25 V; - - 125 mJ
unclamped inductive turn-off VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C
energy

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 5 V

D 25 ˚C

100

SOAX518

tp =
1 us

10 us
100 us

1 ms
10 ms

100 ms

1000

ID / A

RDS(ON) = VDS/ID

100

10

1

110

DC

VDS / V

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

Zth j-mb / (K/W)

10

D =

1

0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.001

0

1E-07 1E-05 1E-03 1E-01 1E+01

t / s

P

D

BUKx55-lv

p

p

t

t

D =

T

t

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

p

January 1997 3 Rev 1.000

Philips Semiconductors Product specification

TrenchMOS transistor BUK7518-55
Standard level FET

100

16

ID/A

10

80

60

40

20

0

0246810

Fig.5. Typical output characteristics, Tj = 25 ˚C

RDS(ON)/mOhm

30

25

20

VGS/V =

8

7.5

VSD/V

VGS/V =

ID = f(VDS); parameter V

6

6.5
7

7

6.5

6

5.5

5

4.5
4

.

GS

8

9
10

35

gfs/S

30

25

20

15

10

5

0

0 20406080100

Fig.8. Typical transconductance, Tj = 25 ˚C

ID/A

.

gfs = f(ID); conditions: VDS = 25 V

2.5

1.5

a

2

BUK959-60

Rds(on) normlised to 25degC

15

10

10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100

ID/A

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

= f(ID); parameter V

DS(ON)

100

ID/A

80

60

40

20

0

012345678910

Tj/C = 175 25

VGS/V

GS

Fig.7. Typical transfer characteristics.

ID = f(VGS) ; conditions: VDS = 25 V; parameter T

1

0.5

-100 -50 0 50 100 150 200

.

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C

VGS(TO) / V

5

max.

4

typ.

3

min.

2

1

0

-100 -50 0 50 100 150 200

Tmb / degC

= f(Tj); ID = 25 A; VGS = 5 V

BUK759-60

Tj / C

Fig.10. Gate threshold voltage.

V

j

= f(Tj); conditions: ID = 1 mA; VDS = V

GS(TO)

GS

January 1997 4 Rev 1.000

Philips Semiconductors Product specification

TrenchMOS transistor BUK7518-55
Standard level FET

1E-01

1E-02

1E-03

1E-04

1E-05

1E-06

012345

2%

Sub-Threshold Conduction

typ

98%

Fig.11. Sub-threshold drain current.

ID = f(V

3

2.5

2

1.5

Thousands pF

1

5

0

0.01 0.1 1 10 100

Fig.12. Typical capacitances, C

; conditions: Tj = 25 ˚C; VDS = V

GS)

VDS/V

, C

iss

oss

, C

GS

rss

.

C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

100

IF/A

80

60

40

20

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

Tj/C = 175 25

VSDS/V

Fig.14. Typical reverse diode current.

IF = f(V

120
110
100

90
80
70
60
50
40
30
20
10

0

); conditions: V

SDS

WDSS%

20 40 60 80 100 120 140 160 180

= 0 V; parameter T

GS

Tmb / C

Fig.15. Normalised avalanche energy rating.

W

% = f(Tmb); conditions: ID = 75 A

DSS

j

12

VGS/V

10

VDS = 14V

8

VDS = 44V

6

4

2

0

0 10203040

QG/nC

Fig.13. Typical turn-on gate-charge characteristics.

V

= f(QG); conditions: ID = 50 A; parameter V

GS

DS

L

VDS

VGS

0

RGS

T.U.T.

Fig.16. Avalanche energy test circuit.

W

= 0.5 ⋅ LI

DSS

2

D

⋅BV

DSS

/(BV

R 01

shunt

DSS−VDD

VDD

+

-

-ID/100

)

January 1997 5 Rev 1.000

Philips Semiconductors Product specification

TrenchMOS transistor BUK7518-55
Standard level FET

VDD

+

RD

VDS

VGS

0

RG

T.U.T.

Fig.17. Switching test circuit.

-

January 1997 6 Rev 1.000

Philips Semiconductors Product specification

TrenchMOS transistor BUK7518-55

Standard level FET

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

10,3
max

1,3

3,7

4,5
max

3,0 max

not tinned

1,3

max

(2x)

123

2,54 2,54

2,8

3,0

13,5

min

0,9 max (3x)

5,9

min

15,8

max

0,6

2,4

Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.

2. Refer to mounting instructions for SOT78 (TO220) envelopes.

3. Epoxy meets UL94 V0 at 1/8".

January 1997 7 Rev 1.000

Philips Semiconductors Product specification

TrenchMOS transistor BUK7518-55

Standard level FET

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

January 1997 8 Rev 1.000