Philips buk7213_5F40a Datasheet

M3D300

1. Product proﬁle

1.1 Description

1.2 Features

1.3 Applications

BUK7213-40A

TrenchMOS™ standard level FET

Rev. 01 — 29 January 2004 Product data

N-channel enhancement mode ﬁeld-effect powertransistorina plastic package using Philips General-Purpose Automotive TrenchMOS™ technology.

■ Very low on-state resistance ■ Q101 compliant

■ 175 °C rated ■ Standard level compatible

■ Automotive systems ■ 12 V loads

■ Motors, lamps and solenoids ■ General purpose power switching

1.4 Quick reference data

■ VDS≤ 40 V ■ R

■ ID≤ 78 A ■ P

DSon

≤ 150 W.

tot

2. Pinning information

Table 1: Pinning - SOT428 (D-PAK), simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g) 2 drain (d) 3 source (s) mb drain (d)

mb

2

13

Top view

SOT428 (D-PAK)

MBK091

= 10.3 mΩ (typ)

g

MBB076

d

s

Philips Semiconductors

BUK7213-40A

TrenchMOS™ standard level FET

3. Ordering information

Table 2: Ordering information

Type number Package

Name Description Version

BUK7213-40A D-PAK Plastic single-ended surface mounted package (Philips version of D-PAK);

SOT428

3 leads (one lead cropped)

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

DR

I

DRM

Avalanche ruggedness

E

DS(AL)S

Electrostatic discharge

V

esd

drain-source voltage (DC) - 40 V drain-gate voltage (DC) RGS=20kΩ -40V gate-source voltage (DC) - ±20 V drain current (DC) Tmb=25°C; VGS=10V;

Figure 2 and 3

= 100 °C; VGS=10V;Figure 2

T

mb

peak drain current Tmb=25°C; pulsed; tp≤ 10 µs;

[1]

-78A

[2]

-55A

[1]

-55A

- 312 A

Figure 3

total power dissipation Tmb=25°C; Figure 1 - 150 W storage temperature −55 +175 °C junction temperature −55 +175 °C

reverse drain current (DC) Tmb=25°C

[1]

-78A

[2]

-55A

peak reverse drain current Tmb=25°C; pulsed; tp≤ 10 µs - 312 A

non-repetitive avalanche energy unclamped inductive load; ID=75A;

≤ 40 V; VGS= 10 V; RGS=50Ω;

V

electrostatic discharge voltage, all pins

DS

starting T

human body model; C = 100 pF;

R = 1.5 kΩ

mb

=25°C

- 244 mJ

- 1.6 kV

[1] Current is limited by power dissipation chip rating [2] Continuous current is limited by package

9397 750 12486

Product data Rev. 01 — 29 January 2004 2 of 14

Philips Semiconductors

03na19

0

40

80

120

0 50 100 150 200

P

der

(%)

BUK7213-40A

TrenchMOS™ standard level FET

Tmb (°C)

P

tot

P

der

-----------------------

P

tot 25 C°()

100%×=

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

3

10

100

I

D

(A)

75

50

Capped at 55A due to package

25

0

0 50 100 150 200

03np38

Tj (°C)

VGS≥ 10 V

Fig 2. Continuous drain current as a function of

mounting base temperature.

03np04

I

D

(A)

10

1

limit R

2

Capped at 55 A due to bondwires

1 10 10

DSon

= VDS/I

D

tp = 10 µs

100 µs

DC

1 ms

10 ms 100 ms

VDS (V)

2

Tmb=25°C; IDM single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 12486

Product data Rev. 01 — 29 January 2004 3 of 14

Philips Semiconductors

BUK7213-40A

TrenchMOS™ standard level FET

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-mb)

R

th(j-a)

thermal resistance from junction to mounting base

thermal resistance from junction to ambient

5.1 Transient thermal impedance

Figure 4 - - 1 K/W

vertical in still air; SOT428 package - 71.4 - K/W

1

Z

th(j-mb)

(K/W)

10

-1

-2

-3 10

δ = 0.5

0.2

0.1

0.05

0.02

single shot

-6

10

P

-5

10

-4

10

-3

10

-2

10

-1

03nk31

δ =

t

p

T

tp (s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

t

p

T

t

1

9397 750 12486

Product data Rev. 01 — 29 January 2004 4 of 14

Philips Semiconductors

BUK7213-40A

TrenchMOS™ standard level FET

6. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source breakdown voltage

V

I

DSS

I

GSS

R

GS(th)

DSon

gate-source threshold voltage ID= 1 mA; VDS=VGS; Figure 9

drain-source leakage current VDS= 40 V; VGS=0V

gate-source leakage current VGS= ±20 V; VDS= 0 V - 2 100 nA drain-source on-state

resistance

Dynamic characteristics

Q Q Q C C C t

d(on)

t

r

t

d(off)

t

f

L

d

L

s

g(tot) gs

gd iss oss rss

total gate charge VGS=10V; VDD=32V; gate-to-source charge - 10 - nC gate-to-drain (Miller) charge - 20 - nC input capacitance VGS=0V; VDS=25V; output capacitance - 590 708 pF reverse transfer capacitance - 389 532 pF turn-on delay time VDD= 30 V; RL= 1.2 Ω; rise time - 124 - ns turn-off delay time - 57 - ns fall time - 68 - ns internal drain inductance measured from drain to centre

internal source inductance measured from source lead to

ID= 0.25 mA; VGS=0V

=25°C 40--V

T

j

= −55 °C 36--V

T

j

=25°C 234V

T

j

= 175 °C 1--V

T

j

= −55 °C - - 4.4 V

T

j

=25°C - 0.05 10 µA

T

j

= 175 °C - - 500 µA

T

j

VGS=10V; ID=25A;

Figure 7 and 8

=25°C - 10.3 13 mΩ

T

j

= 175 °C - - 24.7 mΩ

T

j

-47-nC

=25A;Figure 14

I

D

- 1684 2245 pF

f = 1 MHz; Figure 12

-16-ns

=10V; RG=10Ω

V

GS

- 2.5 - nH

of die

- 7.5 - nH

source bond pad

9397 750 12486

Product data Rev. 01 — 29 January 2004 5 of 14

Philips Semiconductors

BUK7213-40A

TrenchMOS™ standard level FET

Table 5: Characteristics

…continued

Tj=25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Source-drain diode

V

SD

source-drain (diode forward)

IS= 25 A; VGS= 0 V; - 0.85 1.2 V

voltage

t

rr

Q

r

reverse recovery time IS= 20 A; dIS/dt = −100 A/µs

= −10 V; VDS=20V

V

recovered charge - 25 - nC

GS

-50-ns

9397 750 12486

Product data Rev. 01 — 29 January 2004 6 of 14

Philips Semiconductors

BUK7213-40A

TrenchMOS™ standard level FET

300

I

D

(A)

200

100

0

0246810

20 l abel is VGS (V)

18

16

14

12

10

9.5 9

8.5 8

7.5 7

6.5 6

5.5 5

4.5

Tj=25°C; tp= 300 µsT

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

R

DSon

26

(mΩ)

20

label is VGS (V)6 7 8 9 10

03nk27

VDS (V)

03nk28

18

R

DSon (mΩ)

16

14

12

10

8

5 101520

=25°C; ID=25A

j

Fig 6. Drain-source on-state resistance as a function

of gate-source voltage; typical values.

2

a

1.5

03nk26

VGS (V)

03aa27

20

14

8

0 100 200 300

ID (A)

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

1

0.5

0

-60 0 60 120 180

R

DSon

=

a

---------------------------- -

R

DSon 25 C°()

Tj (°C)

Fig 8. Normalized drain source on-state resistance

factor as a function of junction temperature.

9397 750 12486

Product data Rev. 01 — 29 January 2004 7 of 14

Philips Semiconductors

BUK7213-40A

TrenchMOS™ standard level FET

5

V

GS(th)

(V)

4

3

2

1

0

-60 0 60 120 180

ID= 1 mA; VDS=V

GS

max

typ

min

03aa32

Tj (°C)

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

03nk24

g (S)

30

fs

25

-1

10

I

D

(A)

-2

10

-3

10

-4

10

-5

10

-6

10

0246

Tj=25°C; VDS=V

GS

03aa35

maxtypmin

VGS (V)

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

4000

C (pF)

3000

03nk29

20

15

10

0204060

ID (A)

2000

1000

0

-1

10

Tj=25°C; VDS=25V VGS= 0 V; f = 1 MHz

Fig 11. Forward transconductance as a function of

drain current; typical values.

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical values.

C

iss

C

oss

C

rss

1 10 10

VDS (V)

2

9397 750 12486

Product data Rev. 01 — 29 January 2004 8 of 14

Philips Semiconductors

BUK7213-40A

TrenchMOS™ standard level FET

100

I

D

(A)

75

50

25

Tj = 175 °C Tj = 25 °C

0

02468

03nk25

VGS (V)

10

V

GS

(V)

8

6

4

2

0

01020304050

VDS=25V Tj=25°C; ID=25A

Fig 13. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

100

I

S

(A)

75

Fig 14. Gate-source voltage as a function of turn-on

gate charge; typical values.

03np37

VDD = 14 V

VDD = 32 V

QG (nC)

03nk22

50

25

0

0.0 0.5 1.0 1.5

Tj = 175 °C Tj = 25 °C

VSD (V)

VGS=0V

Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.

9397 750 12486

Product data Rev. 01 — 29 January 2004 9 of 14

Philips Semiconductors

TrenchMOS™ standard level FET

7. Package outline

Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped)

seating plane

y

A

E

b

2

A

mounting

base

A

2

A

1

BUK7213-40A

SOT428

E

1

D

H

E

L

2

L

13

b

1

e

1

DIMENSIONS (mm are the original dimensions)

(1)

A

UNIT

mm

Note

1. Measured from heatsink back to lead.

OUTLINE

VERSION

SOT428 TO-252 SC-63

2.38

2.22

1

0.65

0.45

b

2

0.89

0.93

0.71

0.73

IEC JEDEC JEITA

bc

b

1

1.1

0.9

b

5.46

5.26

wAM

D

c

2

0.4

6.22

0.2

5.98

REFERENCES

D

1

L

1

0 10 20 mm

scale

D

1

min.

4.0

E

EH

6.73

6.47

4.81

4.45

1

2.285

ee

1

4.57

10.4

9.6

E

2.95

2.55

L

1

L

min.

0.5

EUROPEAN

PROJECTION

L

0.9

0.5

2

y

w

max.

0.2 0.2

ISSUE DATE

99-09-13 01-12-11

Fig 16. SOT428 (D-PAK).

9397 750 12486

Product data Rev. 01 — 29 January 2004 10 of 14

Philips Semiconductors

8. Soldering

BUK7213-40A

TrenchMOS™ standard level FET

7.00

6.15

5.90

5.80

1.80

1.00

4.60 A

5.65

1.15

3.60 E

6.00

2.30

C

solder lands

solder resist

occupied area

solder paste

Dimensions in mm.

Fig 17. Reﬂow soldering footprint for SOT428.

4.725

6.50

B

6.125

0.30

D

4.57 F

1.30

1.40

1.65

MSD060

9397 750 12486

Product data Rev. 01 — 29 January 2004 11 of 14

Philips Semiconductors

9. Revision history

Table 6: Revision history

Rev Date CPCN Description

01 20040129 - Product data; initial version (9397 750 12486)

BUK7213-40A

TrenchMOS™ standard level FET

9397 750 12486

Product data Rev. 01 — 29 January 2004 12 of 14

Philips Semiconductors

10. Data sheet status

BUK7213-40A

TrenchMOS™ standard level FET

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation Thisdata sheet contains data from the preliminary speciﬁcation. Supplementary data will bepublished

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

11. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2][3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product.

right to make changes at any time in order to improve the design, manufacturing and supply.Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, andmakes no representations or warrantiesthat these products are free from patent, copyright,or mask work right infringement, unless otherwise speciﬁed.

13. Trademarks

12. Disclaimers

TrenchMOS —is a trademark of Koninklijke Philips Electronics N.V.

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors

Contact information

For additional information, please visit http://www.semiconductors.philips.com. For sales ofﬁce addresses, send e-mail to: [email protected]. Fax: +31 40 27 24825

9397 750 12486

Product data Rev. 01 — 29 January 2004 13 of 14

Philips Semiconductors

Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

5.1 Transient thermal impedance . . . . . . . . . . . . . . 4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13

11 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

BUK7213-40A

TrenchMOS™ standard level FET

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Date of release: 29 January 2004 Document order number: 9397 750 12486