Philips BUK218-50DC User Manual

Philips Semiconductors Product specification

TOPFET dual high side switch BUK218-50DC

QUICK REFERENCE DATA

DESCRIPTION

Monolithic dual channel high side SYMBOL PARAMETER MIN. UNIT
protected power switch in
TOPFET2 technology assembled in I
a 7 pin plastic surface mount

L

package.

SYMBOL PARAMETER MAX. UNIT

APPLICATIONS

V
General purpose switch for driving I
lamps, motors, solenoids, heaters. T

BG

L

j

R

ON

FEATURES FUNCTIONAL BLOCK DIAGRAM

Nominal load current (ISO) 8 A

Continuous off-state supply voltage 50 V
Continuous load current 16 A
Continuous junction temperature 150 ˚C
On-state resistance, Tj = 25˚C 40 mΩ

Vertical power TrenchMOS
Low on-state resistance

INPUT 1

CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting

INPUT 2

Overload and
short circuit protection
Self resetting overcurrent
protection
Overvoltage and undervoltage
shutdown with hysteresis
Off-state open circuit
load detection

STATUS

CONTROL &

PROTECTION

CIRCUITS

Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins

GROUND

RG

Reverse battery, overvoltage
and transient protection

Fig.1. Elements of the TOPFET dual HSS with internal ground resistor.

PINNING - SOT427 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 load 1
2 ground
3 input 1
4 connected to mb
5 status
6 input 2
7 load 2

1234567

mb battery Fig. 2. Fig. 3.

mb

I1

I2

S

B

DUAL

HSTF

G

BATT

LOAD 1

LOAD 2

L1

L2

CONVENTION

Positive currents flow into pins, except for load and ground pins.

October 2001 1 Rev 2.010

Philips Semiconductors Product specification

TOPFET dual high side switch BUK218-50DC

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

BG

I

L

P

D

T

stg

T

j

V

GB

V

GB

RI, R

I

I

I

S

I

I

I

S

Continuous supply voltage 0 50 V
Continuous load current per channel T
Total power dissipation T

135˚C - 8 A

mb ≤

25˚C - 83.3 W

mb ≤

Storage temperature -55 175 ˚C
Continuous junction temperature

Reverse battery voltages

1

2

-40 150 ˚C

Continuous reverse voltage - 16 V
Peak reverse voltage - 32 V

Application information

S

External resistors

3

to limit input, status currents 3.2 - kΩ

Input and status currents

Continuous input current -5 5 mA
Continuous status current -5 5 mA

Repetitive peak input current δ ≤ 0.1, tp = 300 µs -50 50 mA
Repetitive peak status current δ ≤ 0.1, tp = 300 µs -50 50 mA

Inductive load clamping VBG = 13 V, IL = 8 A

E

BL

Non-repetitive clamping energy (one Tj = 150˚C prior to turn-off - 150 mJ
channel)

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

C

1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold T

2 Reverse battery voltage is allowed only with external resistors to ensure that the input and status currents do not exceed the limiting values.

3 To limit currents during reverse battery and transient overvoltages (positive or negative).

October 2001 2 Rev 2.010

Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ

the over temperature trip operates

to protect the switch.

The internal ground resistor limits the reverse battery ground current. The connected loads must limit the reverse load currents. Power
is dissipated and the Tj rating must be observed.

j(TO)

Philips Semiconductors Product specification

TOPFET dual high side switch BUK218-50DC

THERMAL CHARACTERISTIC

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Thermal resistance

1

R

th j-mb

Junction to mounting base per channel - 2.4 3 K/W

both channels - 1.2 1.5 K/W

STATIC CHARACTERISTICS

Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Clamping voltages

V

BG

V

BL

V

GL

V

BG

I

B

I

L

I

G

I

L

Battery to ground IG = 1 mA 45 55 65 V
Battery to load per channel IL = IG = 1 mA 50 55 65 V
Ground to load

2

IL = 10 mA 18 23 28 V
IL = 10 A; tp = 300 µs202530V

Supply voltage battery to ground
Operating range

3

- 5.5 - 35 V

Currents 9 V ≤ VBG ≤ 35 V
Total quiescent current

4

VLG = 0 V - - 20 µA

Tmb = 25˚C - 0.1 1 µA

Off-state load current per VBL = V

BG

--10µA
channel Tmb = 25˚C - 0.1 1 µA
Operating current one channel on - 1.8 3 mA

both channels on - 3.6 6 mA

Nominal load current

5

VBL = 0.5 V; Tmb = 85˚C 8 - - A

R

G

R

ON

Effective internal ground IG = -200 mA; tp = 300 µs 40 75 100 Ω
resistance

Resistances per channel V

6

BG

I

L

7

t

p

T

j

On-state resistance 9 to 35 V 10 A 300 µs 25˚C - 30 40 mΩ

150˚C - 60 80 mΩ

R

ON

On-state resistance 5.5 V 5 A 300 µs 25˚C - 50 60 mΩ

150˚C - 100 120 mΩ

1 Of the output Power MOS transistors.
2 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage

3 On-state resistance is increased if the supply voltage is less than 7 V.
4 This is the continuous current drawn from the battery when both inputs are low and includes leakage currents to the loads.
5 Per channel but with both channels conducting. Defined as in ISO 10483-1.
6 Equivalent of the parallel connected resistors for both channels.
7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.

is clamped by the device.

October 2001 3 Rev 2.010

Philips Semiconductors Product specification

TOPFET dual high side switch BUK218-50DC

INPUT CHARACTERISTICS

5.5 V ≤ VBG ≤ 35 V. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

I

V

IG

V

IG(ON)

V

IG(OFF)

∆V
I

I(ON)

I

I(OFF)

IG

Input current VIG = 5 V 20 60 160 µA
Input clamping voltage II = 200 µA 5.5 7 8.5 V
Input turn-on threshold voltage - 2.1 3 V
Input turn-off threshold voltage 1.2 1.8 - V
Input turn-on hysteresis 0.15 0.3 0.5 V
Input turn-on current VIG = 3 V - - 100 µA
Input turn-off current VIG = 1.2 V 12 - - µA

OPEN CIRCUIT DETECTION CHARACTERISTICS

An open circuit load on either channel can be detected in the off-state. Refer to TRUTH TABLE.
This feature requires external load pull-up to a positive supply voltage via a suitable resistor.
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typical is at Tmb = 25˚C.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Open circuit detection

V

LG(OC)

I

B(OC)

Load ground threshold voltage VBG ≥ 9 V 1.5 2.5 3.5 V
Supply quiescent current per VBG = VLG = 16 V - 0.8 1.5 mA

OC channel open circuit detected,

other channel off

-I

L(OC)

Load ground current per VLG = 16 V - 200 300 µA
channel VLG = 3.5 V - 22 40 µA

t

d(OC)

Status delay time input low to status low - 65 100 µs

Application information

R

ext

External load pull-up resistance V

= 5 V - 10 - kΩ

ext

per channel

October 2001 4 Rev 2.010

Philips Semiconductors Product specification

TOPFET dual high side switch BUK218-50DC

UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS

Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C. Refer to TRUTH TABLE.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Undervoltage

V

BG(UV)

Low supply threshold voltage

1

2 4.2 5.3 V

∆V

BG(UV)

Hysteresis 0.1 0.5 1 V

Overvoltage

V

BG(OV)

∆V
I

BG(OV)

BG(OV)

High supply threshold voltage
Hysteresis 0.4 1 2 V

Operating current per channel VBG > V

2

BG(OV)

35 40 45 V

-12mA

OVERLOAD PROTECTION CHARACTERISTICS

Independent protection per channel. Refer to TRUTH TABLE.

5.5 V ≤ VBG ≤ 35 V, limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Overload protection VBL = VBG; tp = 300 µs

I

L(lim)

P
T

D(TO)

DSC

Load current limiting VBG ≥ 8 V 18 30 42 A

VBG = 5.5 V 15 27 42 A

Short circuit load protection Tmb ≤ 125˚C prior to overload
Overload power threshold for protection

4

Characteristic time which determines trip time

3

100 150 200 W

5

- 200 500 µs

Overtemperature protection

T

j(TO)

∆T

j(TO)

1 Undervoltage sensors causes each channel to switch off and reset.
2 Overvoltage sensors causes each output channel to switch off to protect its load.
3 Above this temperature measurement of these parameters is prevented because OT protection may occur prior to SC protection.
4 Normal operation will be resumed when PD < P
5 Trip time t
6 After cooling below the reset temperature the channel will resume normal operation.

Threshold junction temperature 150 170 190 ˚C
Hysteresis

varies with overload dissipation PD according to the exponential model formula t

d sc

6

and Tj < T

D(TO)

j(TO)

.

≈ T

d sc

3 1020˚C

/ LN[ PD / P

DSC

D(TO)

].

October 2001 5 Rev 2.010

Philips Semiconductors Product specification

TOPFET dual high side switch BUK218-50DC

STATUS CHARACTERISTICS

The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C ≤ T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated. Refer to TRUTH TABLE.

mb

V
V

SG

SG(LO)

Status clamping voltage IS = 100 µA 5.5 7 8.5 V
Status low voltage IS = 100 µA - 0.7 0.9 V

IS = 250 µA - - 1.1 V

I

S

I

S(SAT)

Status leakage current VSG = 5 V - - 10 µA

T

= 25˚C - 0.1 1 µA

mb

Status saturation current

1

VSG = 5 V 5 10 15 mA

Application information

R

S

External pull-up resistor - 47 - kΩ

TRUTH TABLE

ABNORMAL CONDITIONS LOAD

INPUT DETECTED OUTPUT STATUS DESCRIPTION

SUPPLY LOAD 1 LOAD 2

1 2 UV OV OC SC OT OC SC OT 1 2

L L 0 X 0 X X 0 X X OFF OFF H both off & normal
L L 0 X 1 X X X X X OFF OFF L both off, one/both OC or short to V+

L H 0 X 1 X X 0 0 0 OFF ON L one off & OC, other on & normal
H L 0 0 0 0 0 0 0 0 ON OFF H one on & normal, other off & normal
H H 0 0 0 0 0 0 0 0 ON ON H both on & normal
H X 1 0 X X X 0 X X OFF OFF H supply undervoltage lockout
H X 0 1 X 0 0 X 0 0 OFF OFF H supply overvoltage shutdown
H X 0 0 0 1 X X X X OFF X L one SC shutdown
H L 0 0 0 1 X 0 0 X OFF OFF L one SC shutdown, other off & normal
H H 0 0 0 1 X 0 0 0 OFF ON L one SC shutdown, other on & normal
H X 0 0 0 0 1 X X X OFF X L one OT shutdown
H L 0 0 0 0 1 0 0 X OFF OFF L one OT shutdown, other off & normal
H H 0 0 0 0 1 0 0 0 OFF ON L one OT shutdown, other on & normal

KEY TO ABBREVIATIONS

L logic low UV undervoltage
H logic high OV overvoltage
X don’t care OC open circuit

0 condition not present SC short circuit

1 condition present OT overtemperature

1 For example with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to

October 2001 6 Rev 2.010

prevent possible interference with normal operation of the device.

Philips Semiconductors Product specification

TOPFET dual high side switch BUK218-50DC

SWITCHING CHARACTERISTICS

Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 Ω per channel.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

During turn-on from input going high

t

d on

dV/dt

Delay time to 10% V
Rate of rise of load voltage 30% to 70% V

on

L

L

-30-µs

0.5 1 2 V/µs

t

on

Total switching time to 90% V

L

- 100 400 µs

During turn-off from input going low

t

d off

dV/dt
t

off

Delay time to 90% V
Rate of fall of load voltage 70% to 30% V

off

Total switching time to 10% V

L

L

L

-20-µs

0.5 1 2 V/µs

- 40 200 µs

CAPACITANCES

Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C

sg

C

ig

C

bl

Status capacitance VSG = 5 V - 11 15 pF

per channel

Input capacitance VBG = 13 V - 15 20 pF
Output capacitance VBL = 13 V - 265 375 pF

October 2001 7 Rev 2.010

Philips Semiconductors Product specification

TOPFET dual high side switch BUK218-50DC

MECHANICAL DATA

Plastic single-ended surface mounted package (Philips version of D2-PAK);
7 leads (one lead cropped)

E

D

1

mounting

base

D

H

D

4

L

1

eeeeee

7

b

p

SOT427

A

A

1

c

Q

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

0.64

0.46

D

max.

11

D

1

10.30

1.60

9.70

1.20

REFERENCES

L

H

15.80

14.80

Q

D

2.60

2.20

EUROPEAN

PROJECTION

ISSUE DATE

99-06-25
01-04-18

E

1.27

2.90

2.10

p

UNIT

mm

A

4.50

4.10

OUTLINE

VERSION

SOT427

A

bc e

1

1.40

0.85

1.27

0.60

IEC JEDEC EIAJ

Fig.4. SOT427 surface mounting package1, centre pin connected to mounting base.

1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.5 g.

For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.

October 2001 8 Rev 2.010

Philips Semiconductors Product specification

TOPFET dual high side switch BUK218-50DC

DEFINITIONS

DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS

STATUS

Objective data Development This data sheet contains data from the objective specification for

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 2001

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

1

STATUS

2

product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product

Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

1 Please consult the most recently issued datasheet before initiating or completing a design.
2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is

October 2001 9 Rev 2.010

available on the Internet at URL http://www.semiconductors.philips.com.