Philips BUK216-50YT User Manual

Philips Semiconductors Product specification

TOPFET high side switch BUK216-50YT
SMD version

QUICK REFERENCE DATA

DESCRIPTION

Monolithic single channel high side SYMBOL PARAMETER MAX. UNIT protected power switch in TOPFET2 technology assembled in V a 5 pin plastic surface mount package. I

BG

L

Continuous off-state supply voltage 50 V
Continuous load current 10 A

APPLICATIONS T

General controller for driving R
lamps, motors, solenoids, heaters.

j

ON

Continuous junction temperature 150 ˚C
On-state resistance Tj = 25˚C 20 mΩ

FEATURES FUNCTIONAL BLOCK DIAGRAM

Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Latched overtemperature
protection
Load current limiting
at reduced level
Short circuit load detection
Overvoltage and undervoltage
shutdown with hysteresis
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection

STATUS

INPUT

GROUND

CONTROL &

PROTECTION

CIRCUITS

RG

Fig.1. Elements of the TOPFET HSS with internal ground resistor.

BATT

POWER
MOSFET

LOAD

PINNING - SOT426 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 Ground
2 Input
3 (connected to mb)
4 Status
5 Load

3

12 45

mb Battery

March 2002 1 Rev 1.200

mb

B

I

TOPFET

HSS

S

Fig. 2. Fig. 3.

G

L

Philips Semiconductors Product specification

TOPFET high side switch BUK216-50YT
SMD version

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

BG

I

L

P

D

T

stg

T

j

T

sold

-V

BG

-V

BG

RI, R

II, I

S

II, I

S

E

BL

Continuous off-state supply voltage 0 50 V
Continuous load current T

Total power dissipation T

140˚C - 10 A

mb ≤

25˚C - 98 W

mb ≤

Storage temperature -55 175 ˚C
Continuous junction temperature

1

- 150 ˚C

Mounting base temperature during soldering - 260 ˚C

Reverse battery voltages

2

Continuous reverse voltage - 16 V
Peak reverse voltage - 32 V

Application information

S

External resistors

3

to limit input, status currents 3.2 - kΩ

Input and status

Continuous currents -5 5 mA
Repetitive peak currents δ ≤ 0.1, tp = 300 µs -50 50 mA
Inductive load clamping IL = 15 A, VBG = 16 V
Non-repetitive clamping energy Tj = 150 ˚C prior to turn-off - 380 mJ

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

C

Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Thermal resistance

R

th j-mb

1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold T

2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must

3 To limit currents during reverse battery and transient overvoltages (positive or negative).
4 Of the output power MOS transistor.

Junction to mounting base - - 1.0 1.27 K/W

to protect the switch.

limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the T
rating must be observed.

4

the over temperature trip operates

j(TO)

j

March 2002 2 Rev 1.200

Philips Semiconductors Product specification

TOPFET high side switch BUK216-50YT
SMD version

STATIC CHARACTERISTICS

Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Clamping voltages

V
V

-V

-V

V

I

I

I
I

BG

BL

LG

LG

BG

B

L

G

L

Battery to ground IG = 1 mA 50 55 65 V
Battery to load IL = IG = 1 mA 50 55 65 V
Negative load to ground IL = 10 mA 18 23 28 V
Negative load voltage

1

IL = 15 A; tp = 300 µs202530V

Supply voltage battery to ground
Operating range

2

5.5 - 35 V

Currents 9 V ≤ VBG ≤ 16 V
Quiescent current

3

VLG = 0 V - - 20 µA

Tmb = 25˚C - 0.1 2 µA

Off-state load current

4

VBL = V

BG

--20µA

Tmb = 25˚C - 0.1 1 µA
Operating current
Nominal load current

Resistances V

5

6

IL = 0 A - 2 4 mA
VBL = 0.5 V Tmb = 85˚C - - - A

BG

I

L

7

t

p

T

mb

R

ON

On-state resistance 9 to 35 V 5 A 300 µs 25˚C - 15 20 mΩ

150˚C - - 37 mΩ

R

ON

On-state resistance 6 V 5 A 300 µs 25˚C - 18 25 mΩ

150˚C - - 45 mΩ

R

G

1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. Because of current limiting, this parameter is not applicable.
7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.

Internal ground resistance IG = 10 mA 95 150 190 Ω

March 2002 3 Rev 1.200

Philips Semiconductors Product specification

TOPFET high side switch BUK216-50YT
SMD version

INPUT CHARACTERISTICS

9 V ≤ VBG ≤ 16 V. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

I

V

IG

V

IG(ON)

V

IG(OFF)

∆V
I

I(ON)

I

I(OFF)

IG

Input current VIG = 5 V 20 90 160 µA
Input clamping voltage II = 200 µA 5.5 7 8.5 V
Input turn-on threshold voltage - 2.4 3 V
Input turn-off threshold voltage 1.5 2.1 - V
Input turn-on hysteresis - 0.3 - V
Input turn-on current VIG = 3 V - - 100 µA
Input turn-off current VIG = 1.5 V 10 - - µA

STATUS CHARACTERISTICS

The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

SG

V

SG

I

S

I

S

Status clamping voltage IS = 100 µA 5.5 7 8.5 V
Status low voltage IS = 100 µA--1V

Tmb = 25˚C - 0.7 0.8 V
Status leakage current VSG = 5 V - - 15 µA

Tmb = 25˚C - 0.1 1 µA
Status saturation current

1

VSG = 5 V 2 7 12 mA

Application information

R

S

1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to

External pull-up resistor - 47 - kΩ

prevent possible interference with normal operation of the device.

March 2002 4 Rev 1.200

Philips Semiconductors Product specification

TOPFET high side switch BUK216-50YT
SMD version

UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS

Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C. Refer to TRUTH TABLE.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Undervoltage

V

BG(UV)

Low supply threshold voltage

1

2 4.2 5.5 V

∆V

BG(UV)

Hysteresis - 0.5 - V

Overvoltage

V

BG(OV)

∆V

BG(OV)

High supply threshold voltage
Hysteresis - 1 - V

2

35 45 50 V

TRUTH TABLE

ABNORMAL CONDITIONS

INPUT SUPPLY LOAD OUTPUT STATUS DESCRIPTION

UV OV LC SC OT

L X X X X X OFF H off
H 0 0 X 0 0 ON H on & normal (LC not detected!)
H 1 0 X X X OFF H supply undervoltage lockout
H 0 1 X 0 0 OFF H supply overvoltage shutdown
H 0 0 0 1 0 ON L SC detected (without trip)
H 0 0 X X 1 OFF L OT shutdown

DETECTED LOAD

KEY TO ABBREVIATIONS

L logic low UV undervoltage
H logic high OV overvoltage
X don’t care LC low current or open circuit load

0 condition not present SC short circuit

1 condition present OT overtemperature

1 Undervoltage sensor causes the device to switch off and reset.
2 Overvoltage sensor causes the device to switch off to protect its load.

March 2002 5 Rev 1.200

Philips Semiconductors Product specification

TOPFET high side switch BUK216-50YT
SMD version

OVERLOAD PROTECTION / DETECTION CHARACTERISTICS

6 V ≤ VBG ≤ 35 V, limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
Refer to

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

TRUTH TABLE.

I

L(lim)

Overload protection VBL = V
Load current limiting VBG ≥ 9 V 10 15 21 A

BG

Short circuit load detection Status indication only

V

BL(TO)

Battery load threshold voltage

1

VBG = 16 V 8 10 12 V
VBG = 35 V 15 20 25 V

Overtemperature protection

T

j(TO)

Threshold junction 150 170 190 ˚C
temperature

2

SWITCHING CHARACTERISTICS

Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 Ω.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

During turn-on from input going high

t

d on

dV/dt
t

on

t

d off

dV/dt
t

off

Delay time to 10% V
Rate of rise of load voltage 30% to 70% V

on

Total switching time to 90% V

During turn-off

3

Delay time to 90% V
Rate of fall of load voltage 70% to 30% V

off

Total switching time to 10% V

L

L

L

from input going low

L

L

L

-4060µs

- 0.5 1 V/µs

- 160 225 µs

- 70 100 µs

- 0.5 1 V/µs

- 95 130 µs

CAPACITANCES

Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V. designed in parameters.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C

ig

C

bl

C

sg

1 The battery to load threshold voltage for short circuit detection is proportional to the battery supply voltage.
2 Latched protection. After cooling below the threshold temperature the switch will resume normal operation only after the input has been

3 For measurement purposes an Input pulse of 1.5ms is used to ensure the device is stabilised in the on state.

March 2002 6 Rev 1.200

Input capacitance VBG = 13 V - 15 20 pF
Output capacitance VBL = 13 V - 425 600 pF
Status capacitance VSG = 5 V - 11 15 pF

toggled low.

Philips Semiconductors Product specification

TOPFET high side switch BUK216-50YT
SMD version

MECHANICAL DATA

Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads
(one lead cropped)

E

D

1

mounting

base

D

H

D

3

1

24 5

b

e e ee

A

1

L

p

c

Q

SOT426

A

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

0.64

0.46

D

max.

11

D

1

10.30

1.60

1.20

REFERENCES

9.70

L

H

15.80

14.80

Q

D

2.60

2.20

EUROPEAN

PROJECTION

ISSUE DATE

98-12-14
99-06-25

e

E

1.70

2.90

2.10

p

UNIT

mm

A

4.50

4.10

OUTLINE

VERSION

SOT426

A

bc

1

1.40

0.85

1.27

0.60

IEC JEDEC EIAJ

Fig.4. SOT426 surface mounting package1, centre pin connected to mounting base.

1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.5 g.

For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.

March 2002 7 Rev 1.200

Philips Semiconductors Product specification

TOPFET high side switch BUK216-50YT
SMD version

DEFINITIONS

DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS

STATUS

Objective data Development This data sheet contains data from the objective specification for

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 2002

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

1

STATUS

2

product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product

Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

1 Please consult the most recently issued datasheet before initiating or completing a design.
2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is

March 2002 8 Rev 1.200

available on the Internet at URL http://www.semiconductors.philips.com.