Philips buj303b Datasheet

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ303B

GENERAL DESCRIPTION

High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for
use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CESM

V

CBO

V

CEO

I

C

I

CM

P

tot

V

CEsat

h

FEsat

t

f

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Collector-emitter voltage peak value VBE = 0 V - 1050 V
Collector-Base voltage (open emitter) - 1050 V
Collector-emitter voltage (open base) - 400 V
Collector current (DC) - 5 A
Collector current peak value - 10 A
Total power dissipation Tmb ≤ 25 ˚C - 100 W
Collector-emitter saturation voltage IC = 3 A; IB = 1 A 0.25 1.5 V
DC current gain IC = 3 A; VCE = 1.5 V 10.5 ­Fall time IC=2.5 A,IB1=0.5 A 300 - ns

PIN DESCRIPTION

tab

c

1 base
2 collector

b

3 emitter

tab collector

123

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I

C

I

CM

I

B

I

BM

P
T
T

CESM
CEO
CBO

tot
stg
j

Collector to emitter voltage VBE = 0 V - 1050 V
Collector to emitter voltage (open base) - 400 V
Collector to base voltage (open emitter) - 1050 V
Collector current (DC) - 5 A
Collector current peak value - 10 A
Base current (DC) - 2 A
Base current peak value - 4 A
Total power dissipation Tmb ≤ 25 ˚C - 100 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C

THERMAL RESISTANCES

e

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R
R

th j-mb

th j-a

Junction to mounting base - 1.25 K/W
Junction to ambient in free air 60 - K/W

March 2002 1 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ303B

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CES,ICBO

I

CES

I

CEO

Collector cut-off current

Collector cut-off current

1

1

VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
T

= 125 ˚C

j

V

CEO

= V

(400V) - - 0.1 mA

CEOMmax

CESMmax

; - - 2.0 mA

CESMmax

- - 1.0 mA

I

EBO

V

CEOsust

V

CEsat

V

BEsat

h

FE

Emitter cut-off current VEB = 9 V; IC = 0 A - - 0.1 mA
Collector-emitter sustaining voltage IC = 300 mA; L = 25 mH 400 - - V
Collector-emitter saturation voltage IC = 3 A; IB = 1 A - 0.25 1.5 V

IC = 1 A; IB = 0.2 A - - 0.5 V

Base-emitter saturation voltage IC = 3 A; IB = 1 A - 1.0 1.5 V
DC current gain IC = 10 mA; VCE = 5 V 10 - -

IC = 800 mA; VCE = 3 V 23 31 40

h

FEsat

DC current gain IC = 3 A; VCE = 1.5 V - 10.5 -

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Switching times (resistive load) I

t

on

t

s

t

f

Turn-on time 1 - µs
Turn-off storage time 2.5 - µs
Turn-off fall time 0.3 - µs

Switching times (inductive load) I

t

s

t

f

Turn-off storage time 2 - µs
Turn-off fall time 200 - ns

Switching times (inductive load) I

t

s

t

f

Turn-off storage time 3 - µs
Turn-off fall time 300 - ns

= 2.5 A; I

Con

VCC = 250 V;

= 2.5 A; I

Con

= 0.5 A I

Bon

= 0.5 A; -VBB = 5 V;

Bon

= -1 A;

Boff

LC = 300 µH; LB = 1 µH; VCC = 350 V

= 2.5 A; I

Con

= 0.5 A; -VBB = 5 V;

Bon

LC = 300 µH; LB = 1 µH; VCC = 350 V;
Tj = 100 ˚C

1 Measured with half sine-wave voltage (curve tracer).

March 2002 2 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ303B

100-200R

+ V

B

25 mH

Pulse in

50R

Oscilloscope

C.T.

Fig.1. Test circuit for V

IC / mA

400

300

0

VCE / V

Fig.2. Oscilloscope display for V

Horizontal

CEOsust

VCEOsust

+ 50v

Oscilloscope

Vertical

.

min

.

CEOsust

ICon

90 %

IC

ton

IB

10 %

tr 30ns

-IBoff

ts
toff

90 %

10 %

tf

IBon

Fig.4. Switching times waveforms with resistive load.

VCC

LC

IBon

-VBB

LB

T.U.T.

Fig.5. Test circuit inductive load.

VCC = 350 V; -VBE = 5 V; LC = 300 uH; LB = 1 uH

VCC

R

L

VIM
0

R

B

T.U.T.

tp

T

Fig.3. Test circuit resistive load. VIM = -6 to +8 V

IC

ts
toff

IB

IBon

Fig.6. Switching times waveforms with inductive load.

ICon

90 %

10 %

tf

-IBoff

t

t

VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.

RB and RL calculated from I

Con

and I

requirements.

Bon

March 2002 3 Rev 1.000

Philips Semiconductors Product specification

VBEsat (V)

Silicon Diffused Power Transistor BUJ303B

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

Tmb / C

Fig.7. Normalised power dissipation.

PD% = 100⋅PD/PD

100

h

FE

10

= f (Tmb)

25˚C

VCE = 1 V

V

CE =

5 V

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

0.1 1.0 10.0

Fig.10. Base-Emitter saturation voltage.

Solid lines = typ values, V

0.5

V

CEsat

(V)

0.4

0.3

0.2

= f(IC); at IC/IB =4.

BEsat

IC (A)

1

0.01

0.1

1

IC (A)

Fig.8. Typical DC current gain. hFE = f(IC)

parameter V

2

V

CEsat

(V)

IC = 1 A

1

0

0.01 0.1

2 A

3 A

4 A

CE

1

IB (A)

Fig.9. Collector-Emitter saturation voltage.

Solid lines = typ values, V

= f(IB); Tj = 25˚C.

CEsat

10

10

0.1

0

0.1

1.0

IC (A)

Fig.11. Collector-Emitter saturation voltage.

Solid lines = typ values, V

Zth / (K/W)

10

1

0.5

D=

0.2

0.1

0.05

0.1

0.02
0

0.01
1E-06 1E-04 1E-02 1E+00

= f(IC); at IC/IB =4.

CEsat

t

p

t / s

P

D

D =

T

t

T

Fig.12. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

10.0

p

t

March 2002 4 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ303B

2

I

C

(A)

10

VCC

LC

VCL(RBSOAR)

IBon

-VBB

LB

PROBE POINT

T.U.T.

Fig.13. Test Circuit for reverse bias safe operating

area.

Vcl ≤ 1000V; Vcc = 150V; VBB = -5V; LB = 1µH; Lc =

200µH

12

I

C

10

(A)

8

6

4

2

0

0

200

Fig.14. Reverse bias safe operating area Tj ≤ T

400

600

800

1000

V

CLAMP

1200

(V)

jmax

ICM

10

1

max

I

C max

Duty cycle = 0.01

II

(1)

(2)

tp=

10us

100us

1ms

I

-1

10

10ms

III

DC

-2

10

1

10

2

10

3

10

VCE (V)

Fig.15. Forward bias safe operating area. Ths ≤ 25 ˚C

(1) P
(2) Second breakdown limits.

max and P

tot

peak max lines.

tot

I Region of permissible DC operation.
II Extension for repetitive pulse operation.
III Extension during turn-on in single

transistor converters provided that
RBE ≤ 100 Ω and tp ≤ 0.6 µs.

NB: Mounted with heatsink compound and

30 ± 5 newton force on the centre of the
envelope.

March 2002 5 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ303B

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

10,3
max

1,3

3,7

4,5
max

3,0 max

not tinned

1,3
max
(2x)

123

2,54 2,54

2,8

3,0

13,5

min

0,9 max (3x)

5,9

min

15,8

max

0,6

2,4

Fig.16. TO220AB; pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for TO220 envelopes.

2. Epoxy meets UL94 V0 at 1/8".

March 2002 6 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ303B

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 2002

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

March 2002 7 Rev 1.000