Philips buj303a Datasheet

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BUJ303A

TO-220AB

NPN power transistor

Rev. 05 — 3 May 2011 Product data sheet

1. Product profile

1.1 General description

High voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package.

1.2 Features and benefits

 Fast switching  Low thermal resistance

 Very high voltage capability  Very low switching and conduction

losses

1.3 Applications

 DC-to-DC converters  High frequency electronic lighting

ballasts

 Inverters  Motor control systems

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

tot

CESM

Static characteristics

collector current see Figure 1; see Figure 2;

total power dissipation Tmb≤ 25 °C; see Figure 3 --100W collector-emitter peak

voltage

DC current gain IC=5mA; VCE=5V;

see Figure 4

VBE=0V --1000V

=25°C; see Figure 11

=500mA; VCE=5V;

=25°C; see Figure 11

--5A

10 22 35

14 25 35

Page 2

NXP Semiconductors

sym123

2. Pinning information

BUJ303A

NPN power transistor

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 B base 2 C collector 3Eemitter

mb C mounting base; connected to collector

12mb3

SOT78 (TO-220AB)

3. Ordering information

Table 3. Ordering information

Type number Package

BUJ303A TO-220AB plastic single-ended package; heatsink mounted; 1 mounting

Name Description Version

hole; 3-lead TO-220AB

SOT78

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V V I

P T T

CESM CEO

tot stg j

collector-emitter peak voltage VBE= 0 V - 1000 V collector-emitter voltage IB= 0 A - 500 V collector current see Figure 1; see Figure 2; see Figure 4 -5A peak collector current - 10 A base current - 2 A peak base current - 4 A total power dissipation Tmb≤ 25 °C; see Figure 3 - 100 W storage temperature -65 150 °C junction temperature - 150 °C

Product data sheet Rev. 05 — 3 May 2011 2 of 14

Page 3

NXP Semiconductors

001aab999

BUJ303A

NPN power transistor

Bon

CL(CE)

probe point

DUT

(A)

0 1200800400

CEclamp

Fig 1. Test circuit for reverse bias safe operating area Fig 2. Reverse bias safe operating area

001aab993

(%)

120

der

003aag028

(V)

0 16012040 80

Tmb (°C)

Fig 3. Normalized total power dissipation as a function of mounting base temperature

Product data sheet Rev. 05 — 3 May 2011 3 of 14

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NXP Semiconductors

BUJ303A

NPN power transistor

(A)

CMmax

Cmax

-1

-2

(1) P

maximum and P

tot

1 10

peak maximum lines.

tot

(2) Second breakdown limits. (3) I = Region of permissible DC operation. II = Extension for repetitive pulse operation. III = Extension during turn-on in single transistor converters provided that R

Fig 4. Forward bias safe operating area for T

(3)

≤ 25 °C

003aag029

duty cycle = 0.01

tp = 10 µs

(1)

(3)

100 µs

(2)

CEclamp

1 ms 10 ms

III

(3)

(V)

≤ 100 Ω and tp ≤ 0.6 μs.

Product data sheet Rev. 05 — 3 May 2011 4 of 14

Page 5

NXP Semiconductors

5. Thermal characteristics

BUJ303A

NPN power transistor

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-mb)

thermal resistance from junction to mounting

see Figure 5 --1.25K/W

base

th(j-a)

thermal resistance from junction to ambient in free air - 60 - K/W

11010

003aag030

tp (s)

δ =

th(j-mb)

(K/W)

δ = 0.5

0.2

0.1

0.05

0.02

-1

-2

-5

-4

-3

-2

tot

-1

Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse width

Product data sheet Rev. 05 — 3 May 2011 5 of 14

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NXP Semiconductors

6. Characteristics

BUJ303A

NPN power transistor

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

CES

CBO

CEO

collector-emitter cut-off current

VBE=0V; VCE= 1000 V; Tmb=25°C

=0V; VCE= 1000 V; Tj=125°C

collector-base cut-off current VCB= 1000 V; IE=0A; Tmb=25°C collector-emitter cut-off

VCE=500V; IB=0A; Tmb=25°C

[1]

--1mA

[1]

--2mA

[1]

--1mA

[1]

--0.1mA

current

EBO

CEOsus

emitter-base cut-off current VEB=9V; IC=0A; Tmb=25°C --0.1mA collector-emitter sustaining

voltage

IB=0A; IC= 100 mA; LC=25mH;

=25°C; see Figure 6;

500 - - V

see Figure 7

CEsat

BEsat

collector-emitter saturation voltage

base-emitter saturation voltage

IC=3A; IB= 0.6 A; Tmb=25°C; see Figure 8; see Figure 9

IC=3A; IB= 0.6 A; Tmb=25°C; see Figure 10

DC current gain IC=5mA; VCE=5V; Tmb=25°C;

- 0.25 1.5 V

- 0.97 1.3 V

10 22 35

see Figure 11

=500mA; VCE=5V; Tmb=25°C;

14 25 35

see Figure 11

FEsat

DC saturation current gain IC=2.5A; VCE=5V; Tmb=25°C;

10 13.5 17

see Figure 11

=3A; VCE=5V; Tmb=25°C;

-12-

see Figure 11

Dynamic characteristi cs

turn-on time IC=2.5A; I

=75Ω; VBB=-4V; Tmb=25°C;

storage time - 3.3 4 µs

resistive load; see Figure 12

Bon

= 0.5 A; I

=-0.5A;

Boff

;

-0.50.7µs

see Figure 13

=2.5A; I

=1µH; Tmb= 25 °C; inductive

load; see Figure 14 I

=2.5A; I

=1µH; Tj= 100 °C; inductive load;

see Figure 14

fall time IC=2.5A; I

= 0.5 A; VBB=-5V;

Bon

; see Figure 15

= 0.5 A; VBB=-5V;

Bon

; see Figure 15

= 0.5 A; I

Bon

Boff

=-0.5A;

-1.41.6µs

-1.71.9µs

- 0.33 0.45 µs RL=75Ω; VBB=-4V; Tmb=25°C; resistive load; see Figure 12; see Figure 13

=2.5A; I

= 0.5 A; VBB=-5V;

Bon

- 145 160 ns LB=1µH; Tmb= 25 °C; inductive load; see Figure 14

=2.5A; I

=1µH; Tj= 100 °C; inductive load;

Bon

; see Figure 15

= 0.5 A; VBB=-5V;

- 160 200 ns see Figure 14; see Figure 15

[1] Measured with half-sine wave voltage (curve tracer).

Product data sheet Rev. 05 — 3 May 2011 6 of 14

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NXP Semiconductors

001aab988

6 V

30 Hz to 60 Hz

100 Ω to 200 Ω

50 V

horizontal

oscilloscope

vertical

1 Ω300 Ω

001aab9

250

100

(mA)

BUJ303A

NPN power transistor

min

VCE (V)

CEOsus

Fig 6. Test circuit for collector-emit ter su staining

voltage

003aag032

0.5

CEsat

(V)

0.4

0.3

0.2

0.1

-1

(A)

101

Fig 8. Collector-emitter saturation voltage as a

function of collector current; typical values

Fig 7. Oscilloscope display for collector-emitter

sustaining voltage test waveform

003aag031

IB (A)

10110

2.0

CEsat

(V)

1.6

1.2

0.8

0.4

= 1 A 2 A 3 A 4 A

-2

-1

Fig 9. Collector-emitter saturation voltage as a

function of base current; typical values

Product data sheet Rev. 05 — 3 May 2011 7 of 14

Page 8

NXP Semiconductors

001aab989

001aab990

BUJ303A

NPN power transistor

(A)

003aag033

101

BEsat

(V)

1.4

1.2

1.0

0.8

0.6

0.4

0.2

-1

Fig 10. Base-emitter saturation voltage as a function of

collector current; typical values

DUT

-2

VCE = 5 V

-1

003aag034

1 V

IC (A)

10110

Fig 11. DC curr ent gain as a function of collector

current; typical values

90 %

off

Bon

Con

90 %

10 %

tr ≤ 30 ns

−I

Boff

Fig 12. Test circuit for resistive load switching Fig 13. Switching times waveforms for resistive load

Product data sheet Rev. 05 — 3 May 2011 8 of 14

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NXP Semiconductors

BUJ303A

NPN power transistor

Con

90 %

10 %

off

Bon

−I

Boff

001aab99

I V

Bon

DUT

001aab99

Fig 14. Test circuit for inductive load switching Fig 15. Switching times waveforms for inductive load

Product data sheet Rev. 05 — 3 May 2011 9 of 14

Page 10

NXP Semiconductors

BUJ303A

NPN power transistor

7. Package outline

lastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

mounting

base

SOT7

(1)

(2)

(3×)

(2)

(2×)

123

DIMENSIONS (mm are the original dimensions)

(2)

UNIT A

4.7

4.1

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

OUTLINE VERSION

SOT78 SC-46

1.40

1.25

b b

0.9

0.6

IEC JEDEC JEITA

1.6

1.0

(2)

c D

1.3

0.7

1.0

0.4

3-lead TO-220AB

16.0

15.2

REFERENCES

(1)

b(3×)

0 5 10 mm

scale

D1E e

6.6

10.3

9.7

2.54

5.9

L L

15.0

12.8

3.30

2.79

(1)

max.

3.0

p q

3.0

3.8

3.5

2.7

EUROPEAN

PROJECTION

2.6

2.2

ISSUE DATE

08-04-23 08-06-13

Fig 16. Package outline SOT78 (TO-220AB)

Product data sheet Rev. 05 — 3 May 2011 10 of 14

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NXP Semiconductors

8. Revision history

BUJ303A

NPN power transistor

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BUJ303A v.5 20110503 Product data sheet - BUJ303A v.4 Modifications: BUJ303A v.4 20110414 Product data sheet - BUJ303A v.3

• Various changes to content.

Product data sheet Rev. 05 — 3 May 2011 11 of 14

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NXP Semiconductors

BUJ303A

NPN power transistor

9. Legal information

9.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s ) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

[1] [2]

Product status

[3]

Definition

9.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including withou t limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied pri or to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonabl y be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Product data sheet Rev. 05 — 3 May 2011 12 of 14

Page 13

NXP Semiconductors

BUJ303A

NPN power transistor

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpret ed or construed as an offer to sell products that is open f or acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It i s neither qua lif ied nor test ed in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equ ipment or applications.

, unless otherwise

10. Contact information

For more information, please visit: http://www.nxp.com

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and st andards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, da mages or failed produ ct cl aims resulting from custome r design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

9.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIF ARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

For sales office addresses, please send an email to: [email protected]

Product data sheet Rev. 05 — 3 May 2011 13 of 14

Page 14

NXP Semiconductors

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . . 5

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

10 Contact information. . . . . . . . . . . . . . . . . . . . . .13

BUJ303A

NPN power transistor

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 3 May 2011

Document identifier: BUJ303A