Philips buj105ad Datasheet

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BUJ105AD

Silicon diffused power transistor

Rev. 01 — 14 December 2004 Product data sheet

1. Product proﬁle

1.1 General description

High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package.

1.2 Features

■ Low thermal resistance ■ Fast switching

1.3 Applications

■ Electronic lighting ballast ■ DC-to-DC converters

■ Inverters ■ Motor control systems

1.4 Quick reference data

■ V

■ P

≤ 700 V ■ IC≤ 8 A

CESM

≤ 80 W ■ h

tot

FEsat

= 11 (typ)

2. Pinning information

Table 1: Pinning

Pin Description Simpliﬁed outline Symbol

1 base 2 collector 3 emitter mb mounting base; connected to collector

[1] It is not possible to make a connection to pin 2 of the SOT428 (D-PAK) package.

[1]

SOT428 (D-PAK)

sym056

Page 2

Philips Semiconductors

BUJ105AD

Silicon diffused power transistor

3. Ordering information

Table 2: Ordering information

Type number Package

Name Description Version

BUJ105AD D-PAK plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT428

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V V V I

P T T

CESM CEO CBO

tot stg j

peak collector-emitter voltage VBE = 0 V - 700 V collector-emitter voltage open base - 400 V collector-base voltage open emitter - 700 V collector current (DC) - 8 A peak collector current - 16 A base current (DC) - 4 A peak base current - 8 A total power dissipation Tmb = ≤ 25 °C; see Figure 1 -80W storage temperature −65 +150 °C junction temperature - 150 °C

120

der

(%)

0 16012040 80

%()

der

tot

------------------------ -

tot 25 °C()

100%×=

001aab993

Tmb (°C)

Fig 1. Normalized total power dissipation as a function of mounting base temperature

Product data sheet Rev. 01 — 14 December 2004 2 of 12

Page 3

Philips Semiconductors

BUJ105AD

Silicon diffused power transistor

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-mb)

th(j-a)

[1] Device mounted on a printed-circuit board; minimum footprint

thermal resistance from junction to mounting base see Figure 2 - - 1.56 K/W thermal resistance from junction to ambient

[1]

- 75 - K/W

001aab998

δ =

tp (s)

th(j-mb)

(K/W)

δ = 0.5

0.2

0.1

0.05

0.02

−1

0.01

−2

−5

−4

−3

−2

−1

tot

11010

Fig 2. Transient thermal impedance from junction to mounting base as a function of pulse duration

6. Characteristics

Table 5: Characteristics

Tmb = 25°C; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

CES

CBO

CEO

EBO

CEOsus

CEsat

BEsat

FEsat

collector-emitter cut-off current VBE = 0 V; VCE = V

= 0 V; VCE = V

collector-base cut-off current VBE = 0 V; VCE = V collector-emitter cut-off current V

CEO

= V

CEOMmax

CESMmax CESMmax CESMmax

= 400 V

; Tj= 125 °C

emitter-base cut-off current VEB = 9 V; IC = 0 A - - 1 mA collector-emitter sustaining

voltage collector-emitter saturation

IB = 0 A; IC = 10 mA; L = 25 mH; see

Figure 3 and 4

IC = 4.0 A; IB = 0.8 A; see Figure 11 - 0.3 1.0 V

voltage base-emitter saturation voltage IC = 4.0 A; IB = 0.8 A; see Figure 12 - 1.0 1.5 V DC current gain IC = 1 mA; VCE = 5 V 10 14 34

= 500 mA; VCE = 5 V; see Figure 10 13 23 36

DC saturation current gain IC = 4.0 A; VCE = 5 V 8 11 15

[1]

- - 0.2 mA

[1]

- - 0.5 mA

[1]

- - 0.2 mA

[1]

- - 0.1 mA

400 - - V

Product data sheet Rev. 01 — 14 December 2004 3 of 12

Page 4

Philips Semiconductors

BUJ105AD

Silicon diffused power transistor

Table 5: Characteristics

…continued

Tmb = 25°C; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Dynamic characteristics

Switching times (resistive load); see

stg

turn-on time I storage time - 1.8 2.5 µs

fall time - 0.3 0.5 µs

Switching times (inductive load); see

stg

storage time I

fall time - 2050ns

Switching times (inductive load); see

stg

[1] Measured with half sine-wave voltage (curve tracer).

storage time I

fall time - 25 100 ns

Figure 5 and 6

Figure 7 and 8

50 V

100 Ω to 200 Ω

= 5 A; I

Con

= 5 A; I

Bon

= −5V

Bon

= −5 V; Tj= 100 °C

= −I

= 1 A; RL=75Ω - 0.65 1 µs

Boff

= 1 A; LB=1µH;

= 1 A; LB = 1 µH;

(mA)

- 1.2 1.7 µs

- 1.4 1.9 µs

horizontal oscilloscope vertical

6 V

1 Ω300 Ω

30 Hz to 60 Hz

001aab987

Fig 3. Test circuit for collector-emitter sustaining

voltage

250

100

min

CEOsus

001aab988

Fig 4. Oscilloscope display for collector-emitter

sustaining voltage test waveform

VCE (V)

Product data sheet Rev. 01 — 14 December 2004 4 of 12

Page 5

Philips Semiconductors

BUJ105AD

Silicon diffused power transistor

DUT

001aab989

90 %

stg

off

Bon

10 %

VIM = −6 V to +8 V; VCC = 250 V; tp = 20 µs; δ =tp/T = 0.01.

RB and RL calculated from I requirements.

Con

and I

Bon

tr ≤ 30 ns

−I

Boff

Fig 5. Test circuit for resistive load switching Fig 6. Switching times waveforms for resistive load

Con

90 %

10 %

001aab990

Con

90 %

10 %

I V

Bon

DUT

001aab991

stg

off

Bon

−I

Boff

VCC = 300 V; VBB = −5 V; LC = 200 µH; LB = 1 µH.

001aab992

Fig 7. Test circuit for inductive load switching Fig 8. Switching times waveforms for inductive load

Product data sheet Rev. 01 — 14 December 2004 5 of 12

Page 6

Philips Semiconductors

BUJ105AD

Silicon diffused power transistor

001aac045

IC (A)

10110

Tj = 100 °C

25 °C

−40 °C

−2

−1

Fig 9. DC current gain as a function of collector

current; typical values at V

2.0

CEsat

(V)

IC = 1 A 2 A 3 A 4 A

1.6

= 1 V

001aab995

001aac046

IC (A)

10110

Tj = 100 °C

−2

25 °C

−40 °C

−1

Fig 10. DC current gain as a function of collector

current; typical values at VCE = 5 V

001aac047

1.3

BEsat

(V)

1.1

1.2

0.8

0.4

−2

−1

IB (A)

10110

Tj = 25 °C. IC/IB = 4.

Fig 11. Collector-emitter saturation voltage as a

function of base current; typical values

0.9

Tj = −40 °C

25 °C

0.7

0.5

100 °C

−1

IC (A)

101

Fig 12. Base-emitter saturation voltage asa function of

collector current; typical values

Product data sheet Rev. 01 — 14 December 2004 6 of 12

Page 7

Philips Semiconductors

BUJ105AD

Silicon diffused power transistor

001aac048

(A)

101

0.6

CEsat

(V)

0.4

0.2

Tj = 100 °C

25 °C

−40 °C

−1

IC/IB = 4. V

Fig 13. Collector-emitter saturation voltage as a

function of collector current; typical values

(A)

CEclamp

probe point

Bon

< 700 V; VCC= 150 V; VBB= −5V,−3 V and

CEclamp

DUT

001aab999

−1 V; LB = 1 µH; LC = 200 µH.

Fig 14. Test circuit for reverse bias safe operating area

001aac049

Tj < T

j(max)

Fig 15. Reverse bias safe operating area

7. Package information

Epoxy meets requirements of UL94 V-0 at1⁄8 inch.

0 800600200 400

VBB = −5 V

−3 V

−1 V

CEclamp

(V)

Product data sheet Rev. 01 — 14 December 2004 7 of 12

Page 8

Philips Semiconductors

8. Package outline

BUJ105AD

Silicon diffused power transistor

Plastic single-ended surface mounted package (D-PAK); 3 leads (one lead cropped)

mounting base

SOT428

DIMENSIONS (mm are the original dimensions)

UNIT

OUTLINE VERSION

SOT428 SC-63

0.93

2.38

2.22

0.73

0.89

0.71

bcD

1.1

0.9

IEC JEDEC JEITA

5.46

5.00

Fig 16. Package outline SOT428 (SC-63)

0 5 10 mm

min

0.56

6.22

5.98

4.0

0.20

REFERENCES

TO-252

scale

min

6.73

4.45

6.47

2.285 4.57

0.2

max

0.2

10.4

2.95

9.6

2.55

EUROPEAN

PROJECTION

min

0.5

0.9

0.5

ISSUE DATE

01-12-11 04-10-14

Product data sheet Rev. 01 — 14 December 2004 8 of 12

Page 9

Philips Semiconductors

9. Mounting

BUJ105AD

Silicon diffused power transistor

7.0

2.15

2.5

Dimensions in mm.

1.5

4.57

001aab021

Fig 17. SOT428 soldering pattern for surface mounting

Product data sheet Rev. 01 — 14 December 2004 9 of 12

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Philips Semiconductors

Silicon diffused power transistor

BUJ105AD

10. Revision history

Table 6: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

BUJ105AD_1 20041214 Product data sheet - 9397 750 14196 -

Product data sheet Rev. 01 — 14 December 2004 10 of 12

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Philips Semiconductors

11. Data sheet status

BUJ105AD

Silicon diffused power transistor

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This data sheet contains datafromthe preliminary speciﬁcation. Supplementary data will be published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2] [3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product.

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, andmakes no representations or warrantiesthat these products are free from patent, copyright,or mask work right infringement, unless otherwise speciﬁed.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: [email protected]

Product data sheet Rev. 01 — 14 December 2004 11 of 12

Page 12

Philips Semiconductors

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Package information . . . . . . . . . . . . . . . . . . . . . 7

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11

12 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

14 Contact information . . . . . . . . . . . . . . . . . . . . 11

BUJ105AD

Silicon diffused power transistor

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 14 December 2004

Document number: 9397 750 14196