Philips buj103a Datasheet

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BUJ103A

Silicon diffused power transistor

Rev. 03 — 3 March 2005 Product data sheet

1. Product proﬁle

1.1 General description

High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package.

1.2 Features

■ Low thermal resistance ■ Fast switching

1.3 Applications

■ Electronic lighting ballasts ■ DC-to-DC converters

■ Inverters ■ Motor control systems

1.4 Quick reference data

■ V

■ P

≤ 700 V ■ IC≤ 4 A

CESM

≤ 80 W ■ h

tot

= 12.5 (typ)

FEsat

2. Pinning information

Table 1: Pinning

Pin Description Simpliﬁed outline Symbol

1 base 2 collector 3 emitter mb mounting base; connected to collector

12mb3

SOT78 (TO-220AB)

sym056

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Philips Semiconductors

BUJ103A

Silicon diffused power transistor

3. Ordering information

Table 2: Ordering information

Type number Package

Name Description Version

BUJ103A TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-leads SOT78

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V V V I

P T T

CESM CBO CEO

tot stg j

peak collector-emitter voltage VBE = 0 V - 700 V collector-base voltage open emitter - 700 V collector-emitter voltage open base - 400 V collector current (DC) - 4 A peak collector current - 8 A base current (DC) - 2 A peak base current - 4 A total power dissipation Tmb≤ 25 °C; see Figure 1 -80W storage temperature −65 +150 °C junction temperature - 150 °C

120

der

(%)

0 16012040 80

%()

der

tot

------------------------ -

tot 25 °C()

100%×=

001aab993

Tmb (°C)

Fig 1. Normalized total power dissipation as a function of mounting base temperature

Product data sheet Rev. 03 — 3 March 2005 2 of 12

Page 3

Philips Semiconductors

BUJ103A

Silicon diffused power transistor

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-mb)

th(j-a)

thermal resistance from junction to mounting base see Figure 2 - - 1.56 K/W thermal resistance from junction to ambient in free air - 60 - K/W

001aab998

δ =

tp (s)

th(j-mb)

(K/W)

δ = 0.5

0.2

0.1

0.05

0.02

−1

0.01

−2

−5

−4

−3

−2

−1

tot

11010

Fig 2. Transient thermal impedance from junction to mounting base as a function of pulse duration

Product data sheet Rev. 03 — 3 March 2005 3 of 12

Page 4

Philips Semiconductors

BUJ103A

Silicon diffused power transistor

6. Characteristics

Table 5: Characteristics

Tmb = 25°C; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

CES

collector-emitter cut-off current

CBO

CEO

collector-base cut-off current VBE = 0 V; VCE = V collector-emitter cut-off

current

EBO

CEOsus

emitter-base cut-off current VEB = 7 V; IC = 0 A - - 0.1 mA collector-emitter sustaining

voltage

CEsat

collector-emitter saturation voltage

BEsat

base-emitter saturation voltage

FEsat

DC current gain IC = 1 mA; VCE = 5 V; see Figure 9 10 17 32

DC saturation current gain IC = 2.0 A; VCE = 5 V 11 16 22

Dynamic characteristics

Switching times (resistive load); see

stg

turn-on time I storage time - 2.7 3.3 µs

fall time - 0.3 0.35 µs

Switching times (inductive load); see

stg

storage time I

fall time - 30 60 ns

Switching times (inductive load); see

stg

storage time I

fall time - - 120 ns

VBE = 0 V; VCE = V

= 0 V; VCE = V

CEO

IB = 0 A; IC = 10 mA; L = 25 mH; see

IC = 3.0 A; IB = 0.6 A; see Figure 10 - 0.25 1 V

IC = 3.0 A; IB = 0.6 A; see Figure 11 - 0.97 1.5 V

= 500 mA; VCE = 5 V 13 22 32

= 3.0 A; VCE = 5 V - 12.5 -

Figure 5 and 6

= 2.5 A; I

Con

=75Ω

Figure 7 and 8

= 2 A; I

Con

Figure 7 and 8

= 2 A; I

Con

CESMmax CESMmax CESMmax

= V

CEOMmax

= 400 V

Figure 3 and 4

= −I

Bon

Boff

= 0.4 A; LB = 1 µH;

Bon

= −5V

= 0.4 A; LB = 1 µH;

Bon

= −5 V; Tj= 100 °C

; Tj= 125 °C

= 0.5 A;

[1]

--1mA

[1]

--2mA

[1]

--1mA

[1]

- - 0.1 mA

400 - - V

- 0.52 0.6 µs

- 1.2 1.4 µs

- - 1.8 µs

[1] Measured with half sine-wave voltage (curve tracer).

Product data sheet Rev. 03 — 3 March 2005 4 of 12

Page 5

Philips Semiconductors

(mA)

BUJ103A

Silicon diffused power transistor

100 Ω to 200 Ω

horizontal oscilloscope vertical

6 V

30 Hz to 60 Hz

50 V

1 Ω300 Ω

001aab987

Fig 3. Test circuit for collector-emitter sustaining

voltage

DUT

001aab989

250

100

min

CEOsus

001aab988

Fig 4. Oscilloscope display for collector-emitter

sustaining voltage test waveform

90 %

10 %

Boff

stg

off

Bon

tr ≤ 30 ns

−I

Con

90 %

10 %

001aab990

VCE (V)

VIM = −6 V to +8 V; VCC = 250 V; tp=20µs; δ =tp/T = 0.01.

RB and RL calculated from I

Con

and I

Bon

requirements.

Fig 5. Test circuit for resistive load switching Fig 6. Switching times waveforms for resistive load

Product data sheet Rev. 03 — 3 March 2005 5 of 12

Page 6

Philips Semiconductors

Bon

VCC = 300 V; VBB = −5 V; LC = 200 µH; LB = 1 µH.

DUT

001aab991

BUJ103A

Silicon diffused power transistor

Con

90 %

10 %

stg

off

Bon

−I

Boff

001aab992

Fig 7. Test circuit for inductive load switching Fig 8. Switching times waveforms for inductive load

−2

Tj = 25 °C

VCE = 5 V

−1

001aab994

1 V

IC (A)

10110

Fig 9. DC current gain as a function of collector

current; typical values

2.0

CEsat

(V)

IC = 1 A 2 A 3 A 4 A

1.6

1.2

0.8

0.4

−2

−1

Tj = 25 °C.

Fig 10. Collector-emitter saturation voltage as a

function of base current; typical values

001aab995

IB (A)

10110

Product data sheet Rev. 03 — 3 March 2005 6 of 12

Page 7

Philips Semiconductors

BUJ103A

Silicon diffused power transistor

(A)

001aab996

101

BEsat

(V)

1.4

1.2

1.0

0.8

0.6

0.4

0.2

−1

IC/IB = 4. IC/IB = 4.

Fig 11. Base-emitter saturation voltage as a function of

collector current; typical values

CEclamp

probe point

I V

Bon

DUT

001aab999

001aab997

CEsat

(V)

0.5

0.4

0.3

0.2

0.1

−1

(A)

101

Fig 12. Collector-emitter saturation voltage as a

function of collector current; typical values

001aac000

(A)

CEclamp

≤ 1000 V; VCC = 150 V; VBB = −5 V;

0 1000800400 600200

Tj≤ T

j(max)

CEclamp

(V)

LB=1µH; LC= 200 µH.

Fig 13. Test circuit for reverse bias safe operating area Fig 14. Reverse bias safe operating area

Product data sheet Rev. 03 — 3 March 2005 7 of 12

Page 8

Philips Semiconductors

BUJ103A

Silicon diffused power transistor

(A)

CMmax

Cmax

−1

−2

−3

1 10

Tmb≤ 25 °C; Mounted with heatsink compound and 30 ± 5 Newton force on the center of the envelope.

(1) P

maximum and P

tot

peak maximum lines.

tot

(2) Second breakdown limits. (3) I = Region of permissible DC operation.

II = Extension for repetitive pulse operation. III = Extension during turn-on in single transistor converters provided that RBE≤ 100 Ω and tp≤ 0.6 µs.

Fig 15. Forward bias safe operating area

001aac001

duty cycle = 0.01

(3)

(1)

(2)

(3)

CEclamp

tp = 20 µs

50 µs 100 µs

200 µs 500 µs DC

III

(3)

(V)

7. Package information

Epoxy meets requirements of UL94 V-0 at1⁄8 inch.

Product data sheet Rev. 03 — 3 March 2005 8 of 12

Page 9

Philips Semiconductors

BUJ103A

Silicon diffused power transistor

8. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

(1)

mounting

base

123

0 5 10 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

4.5

4.1

1.39

1.27

UNIT

Note

1. Terminals in this zone are not tinned.

OUTLINE

VERSION

SOT78 SC-463-lead TO-220AB

1.3

1.0

0.7

0.4

0.9

0.6

IEC JEDEC JEITA

15.8

6.4

15.2

5.9

REFERENCES

10.3

9.7

2.54

15.0

13.5

3.30

2.79

max.

3.0

3.8

3.0

3.6

2.7

EUROPEAN

PROJECTION

2.6

2.2

ISSUE DATE

01-02-16 03-01-22

Fig 16. Package outline SOT78 (TO-220AB)

Product data sheet Rev. 03 — 3 March 2005 9 of 12

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Philips Semiconductors

BUJ103A

Silicon diffused power transistor

9. Revision history

Table 6: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

BUJ103A_3 20050303 Product data sheet - 9397 750 14604 BUJ103A_HG_2 Modiﬁcations:

BUJ103A_HG_2 19980918 Product data sheet - 9397 750 04387 BUJ103A_1 BUJ103A_1 19980801 Product data sheet - - -

• The format of this data sheet has been redesigned to comply with the new presentation and

information standard of Philips Semiconductors.

• Section 1.4 “Quick reference data” t

• Section 6 “Characteristics” h

• Section 6 “Characteristics” t

data revised.

and tf data revised.

Product data sheet Rev. 03 — 3 March 2005 10 of 12

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Philips Semiconductors

10. Data sheet status

BUJ103A

Silicon diffused power transistor

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation Thisdata sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

11. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make norepresentation or warranty thatsuch applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2] [3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product.

right to make changes at any time in order to improve the design, manufacturing and supply.Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

12. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makesno representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speciﬁed.

13. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: [email protected]

Product data sheet Rev. 03 — 3 March 2005 11 of 12

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Philips Semiconductors

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Package information . . . . . . . . . . . . . . . . . . . . . 8

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11

11 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Contact information . . . . . . . . . . . . . . . . . . . . 11

BUJ103A

Silicon diffused power transistor

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 3 March 2005

Document number: 9397 750 14604