Philips BU2522AX Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2522AX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
use in horizontal deflection circuits of pc monitors.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PINNING - SOT399 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - 5.0 V
Collector saturation current f = 64 kHz 6.0 - A
Fall time I
= 6.0 A; f = 64 kHz 0.16 0.22 µs
Csat
PIN DESCRIPTION
case
c
1 base
2 collector
b
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Base current (DC) - 6 A
Base current peak value - 9 A
Reverse base current average over any 20 ms period - 150 mA
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
123
e
-6A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-a
1 Turn-off current.
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
September 1997 1 Rev 2.300
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2522AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 0.25 mA
Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 0.25 mA
Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH
Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 5.0 V
Base-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 1.3 V
DC current gain IC = 1 A; VCE = 5 V - 10 -
IC = 6 A; VCE = 5 V 5 7 8
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 115 - pF
Switching times (64 kHz line I
deflection circuit) Cfb = 5.4 nF;I
= 6.0 A; LC = 170 µH;
Csat
B(end)
= 0.7 A;
LB = 0.6 µH; -VBB = 2 V;
(-dIB/dt= 3.33A /µs)
Turn-off storage time 1.7 2.0 µs
Turn-off fall time 0.12 0.25 µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 2.300
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2522AX
30-60 Hz
IC / mA
250
200
100R
6V
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
.
CEOsust
+ 50v
ICsat
90 %
IC
10 %
IB
ts
IBend
tf
- IBM
Fig.4. Switching times definitions.
+ 150 v nominal
adjust for ICsat
Lc
t
t
100
0
VCE / V
Fig.2. Oscilloscope display for V
TRANSISTOR
DIODE
6.5 us5 us
16 us
V
I
I
CE
C
B
min
VCEOsust
CEOsust
ICsat
I end
B
Fig.3. Switching times waveforms (64 kHz).
IBend
-VBB
.
t
t
t
IBend
-VBB
Fig.6. Test Circuit RBSOA. VCC = 140 V; -VBB = 4 V;
LB
Fig.5. Switching times test circuit
LB
T.U.T.
LC
VCC
T.U.T.
Cfb
.
VCL
CFB
LC = 100 - 400 µH; VCL ≤ 1500 V; LB = 3 µH;
CFB = 1 - 2.2 nF; IB(end) = 1.6 - 2 A
September 1997 3 Rev 2.300
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