Philips BU2522AW Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2522AW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
use in horizontal deflection circuits of pc monitors.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PINNING - SOT429 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - 5.0 V
Collector saturation current f = 64 kHz 6.0 - A
Fall time I
= 6.0 A; f = 64 kHz 0.12 0.25 µs
Csat
PIN DESCRIPTION
c
1 base
2 collector
b
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Base current (DC) - 6 A
Base current peak value - 9 A
Reverse base current average over any 20 ms period - 150 mA
Reverse base current peak value
1
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
2
1
3
e
-6A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
1 Turn-off current.
Junction to mounting base with heatsink compound - 1.0 K/W
Junction to ambient in free air 45 - K/W
September 1997 1 Rev 1.100
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2522AW
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
EBO
Collector cut-off current
Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 0.25 mA
Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 5.0 V
Base-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 1.3 V
DC current gain IC = 1 A; VCE = 5 V - 10 -
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 115 - pF
Switching times (64 kHz line I
deflection circuit) Cfb = 5.4 nF;
Turn-off storage time 1.7 2.0 µs
Turn-off fall time 0.12 0.25 µs
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 0.25 mA
L = 25 mH
IC = 6 A; VCE = 5 V 5 7 8
= 6.0 A; LC = 170 µH;
Csat
I
= 0.7 A;LB = 0.6 µH;-VBB = 2 V;
B(end)
(-dIB/dt = 3.33A/µs)
100-200R
Horizontal
Oscilloscope
Vertical
100R
30-60 Hz
6V
Fig.1. Test circuit for V
2 Measured with half sine-wave voltage (curve tracer).
1R
CEOsust
+ 50v
IC / mA
250
200
100
0
VCE / V
VCEOsust
. Fig.2. Oscilloscope display for V
min
CEOsust
.
September 1997 2 Rev 1.100
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2522AW
ICsat
I end
B
t
t
t
V
I
I
CE
TRANSISTOR
C
B
DIODE
6.5 us5 us
16 us
Fig.3. Switching times waveforms (64 kHz).
ICsat
90 %
IC
10 %
IB
ts
IBend
tf
t
VCC
LC
IBend
-VBB
LB
T.U.T.
VCL
CFB
Fig.6. Test Circuit RBSOA. VCC = 140 V; -VBB = 4 V;
LC = 100 - 400 µH; VCL ≤ 1500 V; LB = 3 µH;
CFB = 1 - 2.2 nF; IB(end) = 1.6 - 2 A
100
10
h
FE
Tj = 85 C
Tj = 25 C
Tj = -40 C
BU2522A
IBend
-VBB
- IBM
Fig.4. Switching times definitions.
+ 150 v nominal
adjust for ICsat
Lc
LB
T.U.T.
Cfb
Fig.5. Switching times test circuit
t
1
0.01 0.1 1 10 100
IC / A
Fig.7. Typical DC current gain. hFE = f (IC)
VCE = 5 V
VBESAT / V BU2522A
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.1 1 10
.
Fig.8. Typical base-emitter saturation voltage.
Tj = 85 C
Tj = 25 C
IC / A
VBEsat = f (IC); parameter IC/I
IC/IB =
3
5
B
September 1997 3 Rev 1.100
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