Philips bu2520af Datasheet

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520AF

GENERAL DESCRIPTION

New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CESM

V

CEO

I

C

I

CM

P

tot

V

CEsat

I

Csat

t

f

PINNING - SOT199 PIN CONFIGURATION SYMBOL

Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - 5.0 V
Collector saturation current 6.0 - A
Fall time ICM = 6.0 A; I

= 0.85 A 0.2 0.35 µs

B(end)

PIN DESCRIPTION

1 base

case

c

2 collector

b

3 emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CESM

V

CEO

I

C

I

CM

I

B

I

BM

-I

B(AV)

-I

BM

P

tot

T

stg

T

j

Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Base current (DC) - 6 A
Base current peak value - 9 A
Reverse base current average over any 20 ms period - 150 mA
Reverse base current peak value

1

Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C

THERMAL RESISTANCES

12

3

e

-6A

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-hs

R

th j-hs

R

th j-a

1 Turn-off current.

Junction to heatsink without heatsink compound - 3.7 K/W
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W

November 1995 1 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520AF

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

isol

C

isol

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CES

I

CES

I

EBO

BV

EBO

V

CEOsust

V

CEsat

V

BEsat

h

FE

h

FE

Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink

Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink

Collector cut-off current

2

VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C

CESMmax

; - - 2.0 mA

CESMmax

- - 1.0 mA

Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V

L = 25 mH
Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 5.0 V
Base-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 1.3 V
DC current gain IC = 100 mA; VCE = 5 V 6 13 26

IC = 6 A; VCE = 5 V 5 7 10

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

C

c

t

s

t

f

t

s

t

f

Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 115 - pF
Switching times (32 kHz line ICM = 6.0 A; LC = 330 µH; Cfb = 9 nF;

deflection circuit) I

= 0.85 A; LB = 3.45 µH;

B(end)

-VBB = 4 V; (-dIB/dt = 1.2 A / µs)
Turn-off storage time 3.0 4.0 µs
Turn-off fall time 0.2 0.35 µs

Switching times (16 kHz line ICM = 6.0 A; LC = 650 µH; Cfb = 19 nF;
deflection circuit) I

= 1.0 A; LB = 5.3 µH; -VBB = 4 V;

B(end)

(-dIB/dt = 0.8 A / µs)

Turn-off storage time 4.5 5.5 µs
Turn-off fall time 0.35 0.5 µs

2 Measured with half sine-wave voltage (curve tracer).

November 1995 2 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520AF

I

CM

t

100-200R

+ 50v

TRANSISTOR

IC

DIODE

100R

30-60 Hz

6V

Fig.1. Test circuit for V

IC / mA

250
200

100

0

VCE / V

Fig.2. Oscilloscope display for V

Horizontal

Oscilloscope

Vertical

1R

.

CEOsust

min

VCEOsust

CEOsust

IB

13us10us

32us

VCE

IBend

t

t

Fig.4. Switching times waveforms (32 kHz).

ICM

90 %

IC

10 %

IB

.

Fig.5. Switching times definitions.

ts

IBend

tf

t

t

- IBM

TRANSISTOR

IC

DIODE

ICM

t

+ 150 v nominal
adjust for ICM

Lc

IB

26us20us

64us

VCE

Fig.3. Switching times waveforms (16 kHz).

IBend

t

IBend

LB

T.U.T.

Cfb

BY228

-VBB

t

Fig.6. Switching times test circuit

.

November 1995 3 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520AF

hFE

100

5 V

10

1 V

1

0.1 10

1 100

IC / A

Tj = 25 C
Tj = 125 C

Fig.7. Typical DC current gain. hFE = f (IC)

parameter V

VBESAT / V

1.2

1.1
1

0.9

0.8

0.7

0.6

0.5

0.4

0.1 1 10

Tj = 25 C
Tj = 125 C

CE

IC/IB=

3
4
5

IC / A

Fig.8. Typical base-emitter saturation voltage.

VBEsat = f (IC); parameter IC/I

B

VBESAT / V

1.2

1.1

1

0.9

0.8

0.7

0.6
0 1 2 3 4

Tj = 25 C
Tj = 125 C

IC=

8 A
6 A
5 A

4 A

IB / A

Fig.10. Typical base-emitter saturation voltage.

VBEsat = f (IB); parameter I

VCESAT / V

10

8 A

1

IC = 4 A

0.1

0.1 1 10

6 A

5 A

IB / A

C

Tj = 25 C
Tj = 125 C

Fig.11. Typical collector-emitter saturation voltage.

VCEsat = f (IB); parameter I

C

VCESAT / V

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1
0

0.1 10

IC/IB =

5
4
3

Tj = 25 C
Tj = 125 C

1 100

IC / A

Fig.9. Typical collector-emitter saturation voltage.

VCEsat = f (IC); parameter IC/I

B

Eoff / uJ

1000

IC = 6 A

100

10

0.1 1 10

5 A

IB / A

32 kHz

16 kHz

Fig.12. Typical turn-off losses. Tj = 85˚C

Eoff = f (IB); parameter IC; parameter frequency

November 1995 4 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520AF

ts, tf / us

12
11
10

9
8
7
6
5
4
3
2
1
0

0.1 1 10

16 kHz

IC =

6 A

5 A

IB / A

ts

tf

Fig.13. Typical collector storage and fall time.

ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz

ts, tf / us

12
11
10

9
8
7
6
5
4
3
2
1
0

0.1 1 10

5 A

IB / A

32 kHz

ts

IC =

6 A

tf

Fig.14. Typical collector storage and fall time.

ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

with heatsink compound

Ths / C

Fig.15. Normalised power dissipation.

PD% = 100⋅PD/P

Zth / (K/W)

10

0.5

1

0.2

0.1

0.05

0.1

0.02

0.01

D = 0

0.001
1E-06 1E-04 1E-02 1E+00

D 25˚C

t / s

= f (Ths)

t

p

P

D

T

Fig.16. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-hs

D =

t

p

T

t

November 1995 5 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520AF

100

10

0.1

1

ICM

ICDC

BU2520AFIC / A

tp =

= 0.01

30 us

100 us

Ptot

1 ms

10 ms

DC

0.01
1 10 100 1000

VCE / V

Fig.17. Forward bias safe operating area. Ths = 25 ˚C

I

& ICM = f(VCE); ICM single pulse; parameter t

CDC

Second-breakdown limits independant of temperature.

p

Mounted with heatsink compound.

November 1995 6 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520AF

MECHANICAL DATA

Dimensions in mm
Net Mass: 5.5 g

21.5
max

15.7

0.7

3.5

15.3 max

7.3

3.1

3.3

6.2

5.8

5.2 max

3.2
o

45

seating

plane

3.5 max
not tinned

min

12

2.1 max

5.45

Fig.18. SOT199; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

3

1.2

1.0

5.45

0.4

M

0.7 max

2.0

November 1995 7 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520AF

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1995

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

November 1995 8 Rev 1.200