Philips bt300x DATASHEETS

Philips Semiconductors Product specification
Thyristors BT300X series

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated thyristors in a full SYMBOL PARAMETER MAX. MAX. MAX. UNIT pack, plastic envelope, intended for use in applications requiring high BT300X- 500R 600R 800R bidirectional blocking voltage V capability and high thermal cycling V performance. Typical applications I include motor control, industrial and I domestic lighting, heating and static I switching. current

PINNING - SOT186A PIN CONFIGURATION SYMBOL

, Repetitive peak off-state 500 600 800 V
T(AV) T(RMS) TSM
voltages Average on-state current 5 5 5 A RMS on-state current 8 8 8 A Non-repetitive peak on-state 65 65 65 A
PIN DESCRIPTION
1 cathode
case
ak
2 anode 3 gate
case isolated
123
g

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-500R -600R -800R
V
I
T(AV)
I
T(RMS)
I
TSM
, V
Repetitive peak off-state - 5001600
voltages Average on-state current half sine wave; Ths 79 ˚C - 5 A
RMS on-state current all conduction angles - 8 A Non-repetitive peak half sine wave; Tj = 25 ˚C prior to on-state current surge
t = 10 ms - 65 A
I2tI
2
t for fusing t = 10 ms - 21 A2s
t = 8.3 ms - 71 A
dIT/dt Repetitive rate of rise of ITM = 10 A; IG = 50 mA; - 50 A/µs
on-state current after dIG/dt = 50 mA/µs
triggering I V V P P T T
GM
GM RGM GM
G(AV) stg j
Peak gate current - 2 A Peak gate voltage - 5 V Peak reverse gate voltage - 5 V Peak gate power - 5 W Average gate power over any 20 ms period - 0.5 W Storage temperature -40 150 ˚C Operating junction - 125 ˚C temperature
1
800 V
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997 1 Rev 1.100
Philips Semiconductors Product specification
Thyristors BT300X series

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
ID, I
R
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V three terminals to external waveform; heatsink R.H. 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF heatsink
Thermal resistance with heatsink compound - - 5.7 K/W junction to heatsink without heat sink compound - - 9.3 K/W Thermal resistance in free air - 55 - K/W junction to ambient
Gate trigger current VD = 12 V; IT = 0.1 A - 2 15 mA Latching current VD = 12 V; IGT = 0.1 A - 10 40 mA Holding current VD = 12 V; IGT = 0.1 A - 10 20 mA On-state voltage IT = 12 A - 1.35 1.6 V Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.6 1.5 V
Off-state leakage current VD = V
VD = V
; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
DRM(max) DRM(max)
; VR = V
; Tj = 125 ˚C - 0.1 0.5 mA
RRM(max)

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform.
t
gt
Gate controlled turn-on ITM = 10 A; VD = V time dIG/dt = 5 A/µs
t
q
Circuit commutated VD = 67% V turn-off time ITM = 12 A; VR = 25 V; dITM/dt = 30 A/µs;
dVD/dt = 50 V/µs; RGK = 100
DRM(max)
; Tj = 125 ˚C;
DRM(max)
Gate open circuit 50 100 - V/µs
RGK = 100 200 1000 - V/µs
; IG = 0.1 A; - 2 - µs
DRM(max)
; Tj = 125 ˚C; - 70 - µs
September 1997 2 Rev 1.100
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