Philips bt300 DATASHEETS
Philips Semiconductors Product specification
Thyristors BT300 series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glasspassivatedthyristorsinaplastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope, intended for use in
applications requiring high BT300- 500R 600R 800R
bidirectional blocking voltage V
capability and high thermal cycling V
performance. Typical applications I
include motor control, industrial and I
domestic lighting, heating and static I
switching. current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
, Repetitive peak off-state 500 600 800 V
DRM
RRM
T(AV)
T(RMS)
TSM
voltages
Average on-state current 5 5 5 A
RMS on-state current 8 8 8 A
Non-repetitive peak on-state 65 65 65 A
PIN DESCRIPTION
1 cathode
tab
ak
2 anode
3 gate
tab anode
123
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500R -600R -800R
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
, V
Repetitive peak off-state - 5001600
RRM
voltages
Average on-state current half sine wave; Tmb ≤ 111 ˚C - 5 A
RMS on-state current all conduction angles - 8 A
Non-repetitive peak half sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 10 ms - 65 A
I2tI
2
t for fusing t = 10 ms - 21 A2s
t = 8.3 ms - 71 A
dIT/dt Repetitive rate of rise of ITM = 10 A; IG = 50 mA; - 50 A/µs
on-state current after dIG/dt = 50 mA/µs
triggering
I
V
V
P
P
T
T
GM
GM
RGM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak reverse gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
1
800 V
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997 1 Rev 1.100
Philips Semiconductors Product specification
Thyristors BT300 series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
ID, I
R
Thermal resistance - - 1.8 K/W
junction to mounting base
Thermal resistance in free air - 60 - K/W
junction to ambient
Gate trigger current VD = 12 V; IT = 0.1 A - 2 15 mA
Latching current VD = 12 V; IGT = 0.1 A - 10 40 mA
Holding current VD = 12 V; IGT = 0.1 A - 10 20 mA
On-state voltage IT = 12 A - 1.35 1.6 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.6 1.5 V
Off-state leakage current VD = V
VD = V
; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
DRM(max)
DRM(max)
; VR = V
; Tj = 125 ˚C - 0.1 0.5 mA
RRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform.
t
gt
Gate controlled turn-on ITM = 10 A; VD = V
time dIG/dt = 5 A/µs
t
q
Circuit commutated VD = 67% V
turn-off time ITM = 12 A; VR = 25 V; dITM/dt = 30 A/µs;
dVD/dt = 50 V/µs; RGK = 100 Ω
DRM(max)
; Tj = 125 ˚C;
DRM(max)
Gate open circuit 50 100 - V/µs
RGK = 100 Ω 200 1000 - V/µs
; IG = 0.1 A; - 2 - µs
DRM(max)
; Tj = 125 ˚C; - 70 - µs
September 1997 2 Rev 1.100
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