Philips BT258X-800R, BT258X-600R, BT258X-500R, BT258S-800R, BT258S-600R Datasheet
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Philips Semiconductors Product specification
Thyristors BT258 series
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT
thyristors in a plastic envelope,
intended for use in general purpose BT258- 500R 600R 800R
switching and phase control V
DRM
, Repetitive peak off-state 500 600 800 V
applications. These devices are V
RRM
voltages
intended to be interfaced directly to I
T(AV)
Average on-state current 5 5 5 A
microcontrollers, logic integrated I
T(RMS)
RMS on-state current 8 8 8 A
circuits and other low power gate I
TSM
Non-repetitive peak on-state 75 75 75 A
trigger circuits. current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500R -600R -800R
V
DRM
, V
RRM
Repetitive peak off-state - 50016001800 V
voltages
I
T(AV)
Average on-state current half sine wave; Tmb ≤ 111 ˚C - 5 A
I
T(RMS)
RMS on-state current all conduction angles - 8 A
I
TSM
Non-repetitive peak half sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 10 ms - 75 A
t = 8.3 ms - 82 A
I2tI
2
t for fusing t = 10 ms - 28 A2s
dIT/dt Repetitive rate of rise of ITM = 10 A; IG = 50 mA; - 50 A/µs
on-state current after dIG/dt = 50 mA/µs
triggering
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
V
RGM
Peak reverse gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125
2
˚C
temperature
ak
g
123
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
October 1997 1 Rev 1.200
Philips Semiconductors Product specification
Thyristors BT258 series
logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance - - 2.0 K/W
junction to mounting base
R
th j-a
Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current VD = 12 V; IT = 0.1 A - 50 200 µA
I
L
Latching current VD = 12 V; IGT = 0.1 A - 0.4 10 mA
I
H
Holding current VD = 12 V; IGT = 0.1 A - 0.3 6 mA
V
T
On-state voltage IT = 16 A - 1.3 1.5 V
V
GT
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.4 1.5 V
VD = V
DRM(max)
; IT = 0.1 A; Tj = 110 ˚C 0.1 0.2 - V
ID, I
R
Off-state leakage current VD = V
DRM(max)
; VR = V
RRM(max)
; Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
DRM(max)
; Tj = 125 ˚C; 50 100 - V/µs
off-state voltage exponential waveform; RGK = 100 Ω
t
gt
Gate controlled turn-on ITM = 10 A; VD = V
DRM(max)
; IG = 5 mA; - 2 - µs
time dIG/dt = 0.2 A/µs
t
q
Circuit commutated VD = 67% V
DRM(max)
; Tj = 125 ˚C; - 100 - µs
turn-off time ITM = 12 A; VR = 24 V; dITM/dt = 10 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
October 1997 2 Rev 1.200
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