Philips bss83_n Datasheet

BSS83

MOSFET N-channel enhancement switching transistor

Rev. 03 — 21 November 2007 Product data sheet

IMPORTANT NOTICE

Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name

- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.

http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
[email protected] use [email protected]

(email)
The copyright notice at the bottom of each page (or elsewhere in the document,

depending on the version)

- © Koninklijke Philips Electronics N.V. (year). All rights reserved ­is replaced with:

- © NXP B.V. (year). All rights reserved. ­If you have any questions related to the data sheet, please contact our nearest sales

office via e-mail or phone (details via [email protected]). Thank you for your
cooperation and understanding,

NXP Semiconductors

NXP Semiconductors Product specification

Rev. 03 - 21 November 2007

2 of 9

MOSFET N-channel enhancement switching transistor BSS83

DESCRIPTION

Symmetrical insulated-gate silicon
MOS field-effect transistor of the
N-channel enhancement mode type.
The transistor is sealed in a SOT143
envelope and features a low ON
resistance and low capacitances. The
transistor is protected against
excessive input voltages by
integrated back-to-back diodes
between gate and substrate.

APPLICATIONS

• analog and/or digital switch

• switch driver

PINNING

1 = substrate (b)
2 = source
3 = drain
4 = gate

Note

1. Drain and source are
interchangeable.

Marking code:

BSS83 = % M9

handbook, halfpage

34

g

21

Top view

MAM389

Fig.1 Simplified outline and symbol.

d
b
s

QUICK REFERENCE DATA

Drain-source voltage V
Source-drain voltage V
Drain-substrate voltage V
Source-substrate voltage V
Drain current (DC) I
Total power dissipation up to T

=25°CP

amb

DS
SD
DB
SB

D

tot

max. 10 V
max. 10 V
max. 15 V
max. 15 V
max. 50 mA
max. 230 mW

Gate-source threshold voltage

VDS=VGS;VSB=0;
I

=1µA < 2.0 V

D

V

GS(th)

> 0.1 V

Drain-source ON-resistance

VGS= 10 V; VSB= 0; ID= 0.1 mA R

DSon

< 45 Ω

Feed-back capacitance

VGS=VBS= −15 V;
V

= 10 V; f = 1 MHz C

DS

rss

typ. 0.6 pF

NXP Semiconductors Product specification

Rev. 03 - 21 November 2007

3 of 9

MOSFET N-channel enhancement switching transistor BSS83

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Drain-source voltage V
Source-drain voltage V
Drain-substrate voltage V
Source-substrate voltage V
Drain current (DC) I
Total power dissipation up to T

amb

=25°C

(1)

Storage temperature range T
Junction temperature T

THERMAL RESISTANCE

From junction to ambient in free air

(1)

DS
SD
DB
SB

D

P

tot
stg
j

R

th j-a

max. 10 V
max. 10 V
max. 15 V
max. 15 V
max. 50 mA
max. 230 mW

−65 to + 150 °C

max. 125 °C

= 430 K/W

NXP Semiconductors Product specification

Rev. 03 - 21 November 2007

4 of 9

MOSFET N-channel enhancement switching transistor BSS83

CHARACTERISTICS

T

=25°C unless otherwise specified

amb

Drain-source breakdown voltage

V

GS=VBS

Source-drain breakdown voltage

VGD=VBD= −5 V; ID= 10 nA V

Drain-substrate breakdown voltage

VGB= 0; ID= 10 nA; open source V

Source-substrate breakdown voltage

VGB= 0; ID= 10 nA; open drain V

Drain-source leakage current

V

GS=VBS

Source-drain leakage current

V

GD=VBD

Forward transconductance at f = 1 kHz

V

DS

Gate-source threshold voltage

V

DS=VGS

Drain-source ON-resistance

I

= 0,1 mA;

D

V

GS

V

GS

V

GS

Gate-substrate zener voltages

V

DB=VSB

V

DB=VSB

Capacitances at f = 1 MHz

VGS=VBS= −15 V; VDS= 10 V
Feed-back capacitance C
Input capacitance C
Output capacitance C

Switching times (see Fig.2)

VDD= 10 V; Vi=5 V t

= −5 V; ID= 10 nA V

= −2 V; VDS= 6,6 V I

= −2 V; VSD= 6,6 V I

= 10 V; VSB= 0; ID= 20 mA

; VSB= 0; ID= 1 µA

= 5 V; VSB=0 R
= 10 V; VSB=0 R
= 3,2 V; VSB= 6,8 V (see Fig.4)

=0;−IG=10µAV
=0;+IG=10µAV

(BR)DSX

(BR)SDX

(BR)DBO

(BR)SBO

DSoff

SDoff

g

fs

V

GS(th)

DSon
DSon

R

DSon

Z(1)
Z(2)

rss
iss
oss

on

t

off

> 10 V

> 10 V

> 15 V

> 15 V

< 10 nA

< 10 nA

> 10 mS

typ. 15 mS

> 0,1 V
< 2,0 V

< 70 Ω
< 45 Ω
typ. 80 Ω
< 120 Ω

> 12,5 V
> 12,5 V

typ. 0,6 pF
typ. 1,5 pF
typ. 1,0 pF

typ. 1,0 ns
typ. 5,0 ns

Note

1. Device mounted on a ceramic substrate of 8 mm × 10 mm × 0,7 mm.

NXP Semiconductors Product specification

Rev. 03 - 21 November 2007

5 of 9

MOSFET N-channel enhancement switching transistor BSS83

Pulse generator:

R

=50Ω

i

t

<0,5 ns

r

t

< 1,0 ns

f

t

=20ns

p

δ<0,01

DD

V

i

I

D

(mA)

50 Ω

50 Ω

60

40

V

handbook, halfpage

630 Ω

T.U.T

VGS = 4.5 V

handbook, full pagewidth

0.1 µF
V

o

MBK297

INPUT

OUTPUT

10%

90%

t

r

90%

t

on

10%

Fig.2 Switching times test circuit and input and output waveforms.

MDA250

4 V

3.5 V

1.2

handbook, halfpage

I

VGS = 10 V

D

(mA)

0.8

5 V 4 V

90%

t

f

3.2 V

10%

t

off

90%

10%

MBK296

MDA251

3 V

20

0

04 12

Tj=25°C.

8

VDS (V)

Fig.3 VSB= 0; typical values.

3 V

2.5 V

2 V

0.4

0

0 40 120

80

Tj=25°C.

Fig.4 VSB= 6,8 V; typical values.

V

DSon

2 V

(mV)

NXP Semiconductors Product specification

Rev. 03 - 21 November 2007

6 of 9

MOSFET N-channel enhancement switching transistor BSS83

50

handbook, halfpage

I

D

(mA)

40

30

20

10

0

012 4

Tj=25°C.

Fig.5 VDS= 10 V; VBS= 0; typical values.

3

VGS (V)

MDA252

12

handbook, halfpage

I

D

(mA)

8

4

0

0

Tj=25°C.

VSB = 0 V

1

4 V 12 V

2

Fig.6 VDS=VGS=V

3

GS(th)

8 V

V

GSth

.

MDA253

(V)

4

1.2

handbook, halfpage

I

D

(mA)

0.8

0.4

0

0

Tj=25°C.

VGS =

5 V 4 V 3 V 2 V

10 V

20 40 60 80

V

DSon

(mV)

Fig.7 VSB= 0; typical values.

MDA254

100

NXP Semiconductors Product specification

Rev. 03 - 21 November 2007

7 of 9

MOSFET N-channel enhancement switching transistor BSS83

PACKAGE OUTLINE

Plastic surface mounted package; 4 leads SOT143B

D

y

e

b

p

B

w M

E

v M

A

B

H

E

A

X

34

Q

A

A

1

21

b

1

e

1

detail X

L

c

p

DIMENSIONS (mm are the original dimensions)

UNIT

mm

OUTLINE
VERSION

SOT143B

1.1

0.9

0 1 2 mm

scale

A

1

A

max

0.1

b

c

D

b

0.48

0.38

1

p

0.88

0.15

0.78

0.09

IEC JEDEC EIAJ

E

3.0

1.4

2.8

1.2

REFERENCES

1.9

e

1.7

H

L

E

1

2.5

2.1

0.45

0.15

p

0.55

0.45

EUROPEAN

PROJECTION

e

ywvQ

0.1 0.10.2

ISSUE DATE

97-02-28

NXP Semiconductors

Rev. 03 - 21 November 2007

8 of 9

Legal information

Data sheet status

BSS83

MOSFET N-channel enhancement switching transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may havechangedsincethisdocumentwaspublishedandmay differ in case of multiple devices.Thelatestproductstatus

information is available on the Internet at URL

[1][2]

Product status

Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability fortheconsequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) andtitle. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed orimplied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values arestress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published

http://www.nxp.com/profile/terms, including those pertaining to warranty,

at
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

Trademarks

Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]

NXP Semiconductors

BSS83

MOSFET N-channel enhancement switching transistor

Revision history

Revision history

Document ID Release date Data sheet status Change notice Supersedes

BSS83_N_3 20071121 Product data sheet - BSS83_CNV_2
Modifications:
BSS83_CNV_2 19910401 Product specification - -

• Page 2; column 2; Marking code; row 1 changed

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2007. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 21 November 2007

Document identifier: BSS83_N_3